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GB/T 8760-2020

Chinese Standard: 'GB/T 8760-2020'
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GB/T 8760-2020English139 Add to Cart Days<=3 Test method for dislocation density of monocrystal gallium arsenide Valid GB/T 8760-2020
GB/T 8760-2020Chinese19 Add to Cart <=1-day [PDF from Chinese Authority, or Standard Committee, or Publishing House]  

   

BASIC DATA
Standard ID GB/T 8760-2020 (GB/T8760-2020)
Description (Translated English) Test method for dislocation density of monocrystal gallium arsenide
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard H21
Classification of International Standard 77.040
Word Count Estimation 8,850
Date of Issue 2020-09-29
Date of Implementation 2021-08-01
Older Standard (superseded by this standard) GB/T 8760-2006
Drafting Organization Research Institute of Optoelectronics New Materials Co., Ltd., Yunnan Lincang Xinyuan Germanium Industry Co., Ltd., Guohe General Testing, Evaluation and Certification Co., Ltd., China Electronics Technology Group 46 Research Institute, Guangdong Leading Thin Material Co., Ltd., Yabo Top (Fujian) New Materials Co., Ltd.
Administrative Organization National Semiconductor Equipment and Material Standardization Technical Committee (SAC/TC 203), National Semiconductor Equipment and Material Standardization Technical Committee Material Subcommittee (SAC/TC 203/SC 2)
Regulation (derived from) National Standard Announcement No. 20 of 2020
Proposing organization National Semiconductor Equipment and Material Standardization Technical Committee (SAC/TC 203), National Semiconductor Equipment and Material Standardization Technical Committee Material Subcommittee (SAC/TC 203/SC 2)
Issuing agency(ies) State Administration for Market Regulation, National Standardization Administration

GB/T 8760-2020
Test method for dislocation density of monocrystal gallium arsenide
ICS 77.040
H21
National Standards of People's Republic of China
Replace GB/T 8760-2006
Method for testing dislocation density of gallium arsenide single crystal
2020-09-29 released
2021-08-01 implementation
State Administration for Market Regulation
Issued by the National Standardization Management Committee
Preface
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard replaces GB/T 8760-2006 "Measurement Method of Dislocation Density of Gallium Arsenide Single Crystal". This standard and GB/T 8760-2006
In comparison, the main technical changes except for editorial changes are as follows.
---Modified the specified content and scope of application in the scope of the standard (see Chapter 1, Chapter 1 of the.2006 edition);
---Added normative reference documents (see Chapter 2);
--- The terms and definitions of dislocations and dislocation density have been deleted, and the introductory phrase "The terms and definitions defined by GB/T 14264 are applicable to
This document" (see Chapter 3,.2006 version 2.1, 2.2);
--- Deleted the content of "using selective optimization corrosion technology to display dislocations" in the principle of the method (see Chapter 4, Chapter 3 of the.2006 edition);
--- Added "Unless otherwise specified, only reagents confirmed to be analytically pure and above are used in the test and analysis, and the resistivity of the water used is not small
At 12MΩ·cm” (see Chapter 5);
---The requirements for potassium hydroxide, sulfuric acid and hydrogen peroxide have been revised (see Chapter 5, Chapter 4 of the.2006 edition);
---Modified the requirements of polishing liquid (see 5.4, 5.3 of the.2006 edition);
---Add "platinum crucible or silver crucible" to the equipment (see 6.3);
---Modified the requirements for sample preparation (see Chapter 7, Chapter 5 of the.2006 edition);
---Added the requirements for the field of view area and test point selection when using a metallurgical microscope with digital imaging (see 8.2.2, 8.3.1);
---Added the counting method and topography map when there are many and overlapping dislocation corrosion pits (see 8.4.2);
---The calculation formula in the test data processing uses S-1 instead of C (see Chapter 9, Chapter 8 of the.2006 edition);
--- Revised the chapter title and increased the technical requirements for precision (see Chapter 10, Chapter 9 of the.2006 edition).
This standard is composed of the National Semiconductor Equipment and Material Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Material Standard
The material sub-committee of the Chemical Technology Committee (SAC/TC203/SC2) jointly proposed and managed.
Drafting organizations of this standard. Youyan Optoelectronics New Materials Co., Ltd., Yunnan Lincang Xinyuan Germanium Industry Co., Ltd., Guohe General Testing
Evaluation and Certification Co., Ltd., the 46th Research Institute of China Electronics Technology Group, Guangdong Leading Thin Material Co., Ltd., Albot (Fujian) New
Materials Co., Ltd.
The main drafters of this standard. Zhao Jingping, Lin Quan, Yu Hongguo, Hui Feng, Liu Shufeng, Yao Kang, Xu Suocheng, Xu Xing, Ma Yingjun, Wang Tonghan,
Zhao Suxiao, Wei Shenglin, Chen Jingjing, Fu Ping.
The previous versions of the standard replaced by this standard are as follows.
---GB/T 8760-1988, GB/T 8760-2006.
Method for testing dislocation density of gallium arsenide single crystal
1 Scope
This standard specifies the test method for dislocation density of gallium arsenide single crystal.
This standard is applicable to the measurement of dislocation density of GaAs single crystals on {100} and {111} planes, and the test range is 0cm-2~100000cm-2.
2 Normative references
The following documents are indispensable for the application of this document. For dated reference documents, only the dated version applies to this article
Pieces. For undated references, the latest version (including all amendments) applies to this document.
GB/T 14264 Terminology of Semiconductor Materials
3 Terms and definitions
The terms and definitions defined in GB/T 14264 apply to this document.
4 Principle of the method
The lattice around the dislocations in the gallium arsenide single crystal will be distorted. When some chemical etchant is used to corrode the crystal surface, the
The corrosion rate of the dislocation outcrop is faster, and then the corrosion pit with a specific shape is formed. Observe under a microscope and count these according to certain rules
For corrosion pits with a specific shape, the number of corrosion pits per unit field of view is the dislocation density.
5 Reagents
Unless otherwise specified, only reagents of analytical purity and above are used in the test and analysis, and the resistivity of the water used is not less than 12MΩ·cm.
5.1 Potassium hydroxide (KOH), the mass fraction is not less than 85%.
5.2 Sulfuric acid (H2SO4), the mass fraction is 95% to 98%.
5.3 Hydrogen peroxide (H2O2), the mass fraction is not less than 30%.
5.4 Polishing liquid. a mixed liquid of sulfuric acid, hydrogen peroxide, and water, with a volume ratio of (2~3).1.1, ready to use.
6 Equipment
6.1 Metallurgical microscope, with a magnification of 100 times to 500 times, can meet the requirements of the field of view specified in 8.2.
6.2 The heater can heat potassium hydroxide to a molten and clarified state.
6.3 Platinum crucible or silver crucible.
7 Sample preparation
7.1 Directional cutting
After the gallium arsenide single crystal to be tested is oriented, cut a test piece with a thickness of not less than 0.5mm perpendicular to the growth direction of the gallium arsenide single crystal.
Related standard: GB/T 8763-2020
Related PDF sample: GB/T 14202-1993    GB/T 2522-2017