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GB/T 6590-1998 English PDF

US$419.00 ยท In stock
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GB/T 6590-1998: Semiconductor devices Discrete devices. Part 6: Thyristors Section Two. Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated, up to 100A

GB/T 6590: Evolution and historical versions

Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
GB/T 6590-1998English419 Add to Cart 3 days [Need to translate] Semiconductor devices Discrete devices. Part 6: Thyristors Section Two. Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated, up to 100A   GB/T 6590-1998
GB/T 6590-1986EnglishRFQ ASK 3 days [Need to translate] Blank detail specification for bi-directional triode thyristors (triacs) ambient and case-rated, up to 100A Obsolete GB/T 6590-1986

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Basic data

Standard ID GB/T 6590-1998 (GB/T6590-1998)
Description (Translated English) Semiconductor devices Discrete devices. Part 6: Thyristors Section Two. Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated, up to 100A
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard L43
Classification of International Standard 31.080.20
Word Count Estimation 12,151
Date of Issue 11/17/1998
Date of Implementation 6/1/1999
Older Standard (superseded by this standard) GB/T 6590-1986
Adopted Standard IEC 60747-6-2-1991, IDT
Issuing agency(ies) State Quality and Technical Supervision
Summary This standard specifies the development of 100A or less (including 100A) environment or shell rated bidirectional triode thyristors (including fast type) detailed specification of the basic principles and develop all the detailed specifications within this range should be as detailed specifications with the blank consistent.

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