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GB/T 41853-2022: Semiconductor devices - Micro-electromechanical devices - Wafer to wafer bonding strength measurement
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| GB/T 41853-2022 | English | 384 |
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Semiconductor devices - Micro-electromechanical devices - Wafer to wafer bonding strength measurement
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GB/T 41853-2022
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Basic data | Standard ID | GB/T 41853-2022 (GB/T41853-2022) | | Description (Translated English) | Semiconductor devices - Micro-electromechanical devices - Wafer to wafer bonding strength measurement | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L55 | | Classification of International Standard | 31.080.99 | | Word Count Estimation | 22,264 | | Date of Issue | 2022-10-14 | | Date of Implementation | 2022-10-12 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 41853-2022: Semiconductor devices - Micro-electromechanical devices - Wafer to wafer bonding strength measurement
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Semiconductor devices -- Micro-electromechanical devices -- Wafer to wafer bonding strength measurement
ICS 31.080.99
CCSL55
National Standards of People's Republic of China
Semiconductor Devices Micro-Electro-Mechanical Devices
Bond Strength Measurement Between Wafers
Published on 2022-10-12
2022-10-12 Implementation
State Administration for Market Regulation
Released by the National Standardization Administration
directory
Preface III
1 Scope 1
2 Normative references 1
3 Terms and Definitions 1
4 Measurement method 1
4.1 General 1
4.2 Visual inspection method 1
4.3 Tensile test method 2
4.4 Double Cantilever Test Method 4
4.5 Electrostatic test method 6
4.6 Bubble test method 7
4.7 Three-point bending test method 9
4.8 Chip Shearing Test Method 12
Appendix A (Informative) Bond Strength Example 15
Appendix B (Informative) Example of Manufacturing Process of Three-point Bending Test Specimen 16
Reference 17
foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules of Standardization Documents"
drafted.
This document is equivalent to IEC 62047-9.2011 "Semiconductor Devices Microelectromechanical Devices Part 9.Inter-wafer bonding of MEMS
Strength Measurement".
A chapter "Terms and Definitions" has been added to this document.
The following minimal editorial changes have been made to this document.
a) In order to harmonize with existing standards, the name of the standard is changed to "Measurement of bond strength between wafers of MEMS devices for semiconductor devices";
b) Incorporating the amendments of IEC 62047-9.2011/COR1.2012, the outer margin position of the clauses involved is vertical
Double lines (‖) are marked;
c) Corrected errors in the original IEC 62047-9.2011.ISO 6892-1.2009 and ASTME399-06e2 in Chapter 2.
2008 is an informative reference in the text, delete ISO 6892-1.2009 and ASTME399-06e2.2008; in the bibliography
Added ISO 6892-1.2009 and ASTME399-06e2.2008;
d) Corrected the error in the original IEC 62047-9.2011.the two-dimensional plots in Figures 5 and 6 do not clearly identify the width of the specimen,
Corrected to a three-dimensional diagram, Figure 6 added the unit label "unit is millimeter".
Please note that some content of this document may be patented. The issuing agency of this document assumes no responsibility for identifying patents.
This document is proposed and managed by the National Standardization Technical Committee of Microelectromechanical Technology (SAC/TC336).
This document is drafted by. The Thirteenth Research Institute of China Electronics Technology Group Corporation, Hebei Beitai Electronic Technology Co., Ltd., China Machinery Productivity
Promotion Center Co., Ltd., East China Institute of Optoelectronic Integrated Devices, Hangzhou Zuolan Microelectronics Technology Co., Ltd., Shenzhen Meisi Advanced Electronics Co., Ltd.
Co., Ltd., Akashi Innovation (Yantai) Micro-Nano Sensing Technology Research Institute Co., Ltd., Shaoxing SMIC Manufacturing Co., Ltd.
The main drafters of this document. Li Qian, Wang Weiqiang, Gu Feng, Li Genzi, Zhai Xiaofei, He Kaixuan, Tian Songjie, Liu Jiansheng, Cui Bo, Wu Bin, Wang Wei,
Gao Feng, Wang Chong.
Semiconductor Devices Micro-Electro-Mechanical Devices
Bond Strength Measurement Between Wafers
1 Scope
This document specifies the method for measuring the bond strength after wafer bonding, which is applicable to various wafers such as silicon-silicon eutectic bonding, silicon-glass anodic bonding, etc.
The circular bonding method, and the evaluation of the bonding strength of the relevant structural dimensions in the MEMS process and assembly process.
This document applies to bond strength measurements between wafers from ten microns to several millimeters thick.
2 Normative references
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, dated citations
documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to
this document.
IEC 60749-19 Mechanical and climatic test methods for semiconductor devices - Part 19.Chip shear strength (Semiconductor
3 Terms and Definitions
There are no terms and definitions that need to be defined in this document.
4 Measurement methods
4.1 General
Bonding strength measurement methods are. visual method, tensile test method, double cantilever beam test method, electrostatic test method, bubble (air tightness) test method, three
Point bending (deformation) test method, and chip shear test method.
4.2 Visual inspection
4.2.1 Types of visual inspection methods
By observing the color change of the silicon substrate and the glass surface, we can only determine the basic information of whether the two materials are bonded together. should be used
The test method confirms whether a subsequent bond strength test should be performed, and which area should be selected for testing.
The silicon-glass and glass-glass bonding interfaces should be observed with an optical microscope.
An infrared camera should be used to observe the silicon-silicon bonding interface for voids.
Note. Visual inspection is a qualitative test method.
4.2.2 Equipment
Applicable inspection equipment may use one or more, including. Optical Microscope (OM), Scanning Acoustic Microscope (SAM), Scanning Electron Microscope
Microscope (SEM), Transmission Electron Microscopy (TEM), and Infrared Camera (IR) or Optical Camera (OR).
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