HOME   Cart(0)   Quotation   About-Us Policy PDFs Standard-List
www.ChineseStandard.net Database: 189759 (19 Oct 2025)

GB/T 36401-2018 English PDF

US$794.00 · In stock
Delivery: <= 4 days. True-PDF full-copy in English will be manually translated and delivered via email.
GB/T 36401-2018: Surface chemical analysis -- X-ray photoelectron spectroscopy -- Reporting of results of thin-film analysis
Status: Valid
Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
GB/T 36401-2018English794 Add to Cart 4 days [Need to translate] Surface chemical analysis -- X-ray photoelectron spectroscopy -- Reporting of results of thin-film analysis Valid GB/T 36401-2018

PDF similar to GB/T 36401-2018


Standard similar to GB/T 36401-2018

GB/T 40244   GB/T 35924   GB/T 35930   GB/T 20725   GB/T 14666   

Basic data

Standard ID GB/T 36401-2018 (GB/T36401-2018)
Description (Translated English) Surface chemical analysis -- X-ray photoelectron spectroscopy -- Reporting of results of thin-film analysis
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard G04
Classification of International Standard 71.040.40
Word Count Estimation 42,469
Date of Issue 2018-06-07
Date of Implementation 2019-05-01
Issuing agency(ies) State Administration for Market Regulation, China National Standardization Administration

GB/T 36401-2018: Surface chemical analysis -- X-ray photoelectron spectroscopy -- Reporting of results of thin-film analysis


---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Surface chemical analysis--X-ray photoelectron spectroscopy--Reporting of results of thin-film analysis ICS 71.040.40 G04 National Standards of People's Republic of China Surface chemical analysis X-ray photoelectron spectroscopy Report on the results of thin film analysis (ISO 13424.2013, IDT) Published on.2018-06-07 2019-05-01 implementation State market supervision and administration China National Standardization Administration issued

Content

Foreword I Introduction II 1 Scope 1 2 Normative references 1 3 Terms and Definitions 1 4 Abbreviations 1 5 XPS film analysis review 1 5.1 Introduction 1 5.2 Conventional XPS 2 5.3 Variable angle XPS 3 5.4 Peak shape analysis 3 5.5 Variable Photon Energy XPS 3 5.6 Sputter Depth Analysis XPS 3 6 Sample Processing 3 7 Instrument and operating conditions 3 7.1 Instrument Calibration 3 7.2 Operating conditions 4 8 XPS method, experimental conditions, analysis parameters and analysis results report 4 8.1 XPS Thin Film Analysis Method 4 8.2 Experimental conditions 4 8.3 Analysis parameters 5 8.4 Summary representation example 6 8.5 Analysis results 8 Appendix A (informative) General XPS 9 Appendix B (informative) Variable angle XPS 15 Appendix C (informative) Peak shape analysis 20 Appendix D (informative) Sputter Depth Analysis XPS 30 Reference 32

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard uses the translation method equivalent to ISO 13424.2013 "Surface chemical analysis X-ray photoelectron spectroscopy film analysis results Report". This standard is proposed and managed by the National Microbeam Analysis Standardization Technical Committee (SAC/TC38). This standard is mainly drafted by. Xiamen Heqing Education Consulting Co., Ltd., Department of Chemistry, Tsinghua University. The main drafters of this standard. Tang Dingliang, Li Zhanping, Yan Danxia, Yao Wenqing, Liu Fen, Wang Shuju.

Introduction

X-ray photoelectron spectroscopy (XPS) is widely used for the characterization of material surfaces, especially for overlay films on substrates. can use XPS measures the chemical composition of the near surface region of the film. If the film has a uniform thickness and the thickness is less than the average of the measured photoelectrons About 3 times the depth of escape (MED), the film thickness of the film and the elements or elements in the film can be determined by variable angle XPS or peak shape analysis. Depth analysis of the chemical state of the prime. For thicker films, depth profiling of the elements in the film can be obtained by sputtering depth profiling. If XPS The system has sufficient lateral resolution to determine possible lateral non-uniformities in film thickness or depth profile. These XPS applications It is especially valuable for the characterization of thin film nanostructures because MED is usually small for many material materials and conventional XPS measurement conditions. At 5nm. Chapters 6 and 7 of this standard are the statistical chemical composition of the cover film on the substrate for the operator of the XPS instrument and Effective measurements made at film thickness provide guidance. Chapter 8 of this standard states that XPS data should be included in the measurement and analysis report. Information included. Appendix A, Appendix B, Appendix C, and Appendix D provide data analysis methods for different types of XPS measurements of film samples. Additional information. Surface chemical analysis X-ray photoelectron spectroscopy Report on the results of thin film analysis

1 Scope

This standard gives an explanation of the minimum amount of information required to report an analysis of a film on a substrate using XPS. These analyses involve Measurement of chemical composition and uniform film thickness, as well as variable angle XPS, XPS sputtering depth profile, peak shape analysis and variable photon energy The XPS approach to the measurement of the chemical composition of a non-uniform film as a function of depth.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article. Pieces. For undated references, the latest edition (including all amendments) applies to this document. ISO 18115-1.2010 Surface chemical analysis vocabulary Part 1. Generic terms and generative terms (Surfacechemicalanaly- sis-Vocabulary-Part 1.Generaltermsandtermsusedinspectroscopy)

3 Terms and definitions

The terms and definitions defined in ISO 18115-1.2010 apply to this document.

4 Abbreviations

AES. Auger electronnspectroscopy ARXPS. Angle-resolved X-ray photoelectron spectroscopy IMFP. Inelastic mean free path (Inelasticmeanfreepath) MED. Meanscapedepth (Meanescapedepth) RSF. Relative sensitivity factor (Relativesensitivityfactor) TRMFP. Migration mean free path (Transportmeanfreepath) XPS. X-ray photoelectron spectroscopy

5 XPS thin film analysis review

5.1 Introduction XPS analysis of the film on the substrate provides information on the chemical composition as a function of depth and film thickness. If the total film thickness is less than A total of three times the MED of the detected photoelectrons, a variety of XPS methods can be used. The specific photoelectron MED is IMFP and relative to the table A function of the photoelectron emission angle of the surface normal. IMFP relies on optoelectronic energy and materials. The MED value can be found in the database [1]. in A simple analytical formula for estimating various MED values has been published under an emission angle of ≤ 50° [2]. For such an emission angle, the MED is smaller than the IMFP The product of the cosine of the emission angle, which depends on the intensity of photoelectron elastic scattering in the film [2]. Both IMFP and elastic scattering intensity Depends on the chemical composition of the membrane. Typical MED values are less than 5 nm for many material materials and typical XPS instruments and measurement conditions. in case The elastic scattering effect is negligible and the MED can be approximated by the product of the IMFP and the cosine of the transmitted angle. For an emission angle greater than 50° In the case, although a better estimate can be obtained from the database [1], the latter estimate of the MED may be sufficient. If the total thickness of the film More than 3 times the maximum value of MED. Under certain conditions, XPS with ion sputtering can be used to determine the change of chemical composition with depth. (Appendix D provides a guide to the XPS sputtering depth profiling method and gives examples). Table 1 summarizes the XPS methods that can be used to determine chemical composition and film thickness. Some methods can be used to characterize single or multiple layers on a substrate Layer film, some methods can be used to determine the composition of the sample - depth profile, the composition of which is a function of the depth measured from the surface (ie there is not Must be the interface of two or more phases). The choice of method depends primarily on the type of sample and the shape of the sample for the possible or expected sample Understanding of the state (ie, the sample may consist of a single coating layer on a planar substrate, the multilayer film on a planar substrate, or the composition continuously changes with depth) Sample) whether the total thickness of the film is less than or greater than the maximum MED of the photoelectron being measured, and the desired information (ie, the composition of the film or The thickness of the film). The first three methods in Table 1 are non-destructive, while the last method is destructive (ie, the composition of the exposed surface is It is determined by XPS that the sample is etched by ion bombardment). The following clauses give a brief description of these methods and are attached to the appendix Additional information is provided in . Table 1 XPS characterization method for film and composition change with depth on substrate Method sample morphology Is the film thickness Less than 3 times MED Information obtained additional information 4.2 Single and Multilayer Films on Conventional XPS Planar Substrates are Sequence, Film Thickness and Membrane Composition Appendix A 4.3 variable angle XPS Multilayer film on a planar substrate, Membrane composition with depth varying samples Film thickness and film composition Membrane composition as a function of depth

Appendix B

4.4 Peak shape analysis Multilayer film on a planar substrate, Membrane composition with depth varying samples Film thickness and film composition Membrane composition as a function of depth

Appendix C

4.5 Variable photon Energy XPS Multilayer film on a planar substrate, Membrane composition with depth varying samples Film thickness and film composition Membrane composition as a function of depth 4.6 Sputtering depth Anatomy of XPS Multilayer film on a planar substrate, Membrane composition with depth varying samples Film thickness and film composition Membrane composition as a function of depth

Appendix D

XPS, which is commonly used as a laboratory instrument, is often equipped with a monochromatic AlKα, a non-monochromated AlKα or MgKα X-ray source. For some applications, XPS with a synchrotron X-ray source is valuable because the X-ray energy of the excited sample can be varied. versus Compared to AlX ray excitation, XPS with an AgX ray source can also be used to observe deeper areas. In some cases, you may choose low X-ray excitation source for MgKα or AlKα X-ray energy to obtain surface sensitivity enhancement, while in other cases, it is possible to choose Higher energy to achieve greater bulk sensitivity to avoid artifacts associated with the use of sputter depth profiling. Analysts should be aware of possible artifacts in XPS analysis. These artifacts include sample degradation caused by X-ray irradiation, and the environment is true. The reaction of the empty sample with the gas and various effects that may occur during the depth analysis of the sputtering [3]. 5.2 Regular XPS For a uniform film on a planar substrate, the film thickness can be calculated by calculating the element in the substrate for a particular emission angle when present in the film cover layer. The photoelectron peak intensity is determined by the ratio of the corresponding peak intensities when no film is present. Alternatively, the film thickness can also be derived from the elements of the film The peak intensity of the sub-spectrum is obtained as a ratio of the corresponding intensity of the thick film (the film thickness is much larger than 3 times MED). The chemical composition of the membrane can be measured by the RSF method. set. Appendix A describes methods for obtaining multilayer film thickness, film chemical composition and structure. For the analysis of multilayer films, it is important to determine the relative order of the layers on the substrate. By measuring the two larger emission angles We can estimate the sequence, thickness and composition of the ratio of peak intensity ratios of the next components. Appendix A gives the thickness of the multilayer film Degree, film chemical composition and structure of the method. 5.3 Variable angle XPS For samples with a film thickness less than 3 times the maximum MED of the measured electrons, the film composition can be determined with depth using variable angle XPS (ARXPS) [4]. The change. For each layer of the multilayer film on the substrate, its composition can be obtained, or for samples without phase boundaries, the composition distribution can be determined. Change with depth. For the previous type of sample, the thickness of the film can be estimated. Appendix B gives the method for determining the multiple emission angle An algorithm for depth profiling of the elements measured in the obtained XPS spectrum. 5.4 Peak shape analysis Peak shape analysis [5], the analysis of photoelectron peaks and their associated inelastic scattered electron regions, can be used to reduce the film thickness by less than 3 times. A sample of the largest MED of electrons was measured and its film composition as a function of depth was determined. The analyst can understand the expected sample according to the peak shape analysis. Morphology (distribution of composition with depth), or often the possible form of the sample can be inferred. Appendix C describes the identification of surfaces that have been identified for quantitative analysis. The peak shape analysis of the phase gives useful information on the near surface topography of the sample. 5.5 Variable Photon Energy XPS For samples with a film thickness of up to 3 times the maximum MED of the electron being measured, variable photon energy XPS can be used to determine the film composition with depth. The change. This type of XPS measurement is typically performed on synchrotron radiation with a sufficiently wide range of photon energies to give detection optoelectronics The useful range of sub-MEDs. 5.6 Sputter Depth Analysis XPS Since 1985, "small beam spot" XPS systems for commercial instruments with lateral resolutions less than 10 [mu]m have been developed. Beam focusing Ion guns are also available, so faster sputtering of smaller areas of the sample is possible. Recent material development (eg developed for half) New gate oxides of conductor devices and various types of nanostructures have spurred the growth of XPS applications configured with sputter depth profiling long. It is necessary to obtain a deep analysis of the composition of inorganic and organic thin films without causing serious damage. With C60, argon clusters, With the development of water clusters and other cluster ion sources, it has now become possible to analyze the XPS splash depth of these materials. Has been reported to use The Ar cluster ion beam [7] and the C60 ion beam [8, 9] have low XPS depth profile and low residual carbon contamination for some polymers. Appendix D provides A guide to the XPS sputtering depth profiling method is given and an example is given.

6 sample processing

XPS can analyze different types of thin film samples of metals, semiconductors, inorganic compounds and polymers. ISO 18116 [10] and ISO 18117 Guidance on the preparation and installation of analytical samples is given [11].

7 Instrument and operating conditions

7.1 Instrument calibration The analyst applies the following ISO procedures for calibration or inspection of the performance of the XPS instrument, or the instrument manufacturer's instructions or corresponding text Check the instrument performance. (a) Calibration and inspection of the combined energy energy standard [12] using ISO 15472.2001; (b) Examine the repeatability and consistency of the intensity mark with ISO 24237 [13]; (c) Check the linearity of the intensity scale with ISO 21270 [14]. 7.2 Operating conditions 7.2.1 Energy resolution The main purpose of wide scanning is qualitative analysis. The full width at half maximum (FWHM) of the widely scanned Ag3d5/2 photoelectron peak is recommended to be 2 eV. The narrow scan spectrum provides quantitative information and chemical state information, so it is recommended that the energy resolution of the Ag3d5/2 photoelectron peak is less than 1 eV. FWHM. 7.2.2 Energy range and step size For the XPS analysis to be performed, the energy range of the broad scan spectrum should be large enough to include the CKLL Auger peak and other potentially valuable The peak of the spectrum. The energy range for MgKα X-rays should be 1200 eV, while the energy range for AlKα X-rays should be 1400 eV. When the wide scan energy resolution as described in 7.2.1 is about 2 eV, a scan step size of 1.0 eV is sufficient. For narrow scans (chemical state Analytical, quantitative or other mathematical operations of XPS data), the scan step size should be 0.05 eV or 0.1 eV. 7.2.3 Multiple scans For both wide scan and narrow scan spectra, multiple scans are recommended to allow inspection of XPS spectra over time. What changes (for example due to changes in X-ray intensity or damage to the sample under X-ray irradiation). 7.2.4 Charge control and charge correction For insulator samples, it is possible to generate surface charge. Methods of charge control and charge correction are described in ISO 19318 [15]. through It is often convenient to refer to the carbon contamination peak observed between 284.6 eV and 285 eV using C1s binding energy [16]. Controlling rough surfaces Surface potential is often very difficult. 8 XPS method, experimental conditions, analysis parameters and analysis results report 8.1 XPS film analysis method The selected XPS film analysis method should be reported (as summarized in Section 5 and described in Appendix A, Appendix B, Appendix C, Appendix D). Example 1. Variable angle XPS Example 2. Peak shape analysis Example 3. XPS Sputter Depth Analysis 8.2 Experimental conditions 8.2.1 Introduction The experimental conditions for XPS measurements should be reported. The parameter values described in 8.2 should be reported. In addition, XPS instrument information should be reported as well as here The experimental conditions described. Table 2 gives examples of experimental parameters and their description. 8.2.2 XPS instrument The instrument name and model used for XPS measurements should be reported. If any part on the instrument is a non-standard part for this particular model, Information for the instrument manufacturer's or related design characteristics. Example. The instrument used for the XPS experiment is PHIQuanteraSXM. 8.2.3 XPS Analyzer The reported analyzer conditions should include the type of electron energy analyzer, the acceptance angle of the input lens, and the analysis area of the signal measured on the sample. The range and unit are the pass energy of eV, the energy resolution of eV, the bound energy range measured by each peak of eV, and the unit The energy step size of the eV. Example. The acceptance angle of the analyzer is ±20°, the acceptance area is 1.0mm×0.5mm, and it can pass the X-ray source for the XPS measurement at 55eV, 7.2.4. The energy resolution is 0.6 eV, and the Si2p peak has a binding energy range of 115 eV to 95 eV and a step size of 0.1 eV. 8.2.4 X-ray source The type of X-ray source should be reported (eg, MgKα, AlKα, monochromatic AlKα, using other X-ray source anodes or synchronized) Radiation), photon energy in eV, the illuminated area on the sample, and the dissipated power of the X-ray anode. If known, it should be described X-ray beam spot size and its measurement method. Example 1. Using monochromated AlKα X-rays, the photon energy is 1486.6 eV, the power of the X-ray anode is 50 W, and the irradiation area on the sample is 1.5mm × 0.4mm. The X-ray beam spot is circular, and its diameter is estimated to be 100 μm by the knife-edge method. The beam spot diameter is measured by line scan, which is equivalent to two points. The distance between the two is farther away from each edge in the scanning direction, and the photoelectron intensity between the two points is the distance at 50% of the peak height region. Example 2. Using conventional MgKα X-rays, the photon energy is 1253.6 eV, and the irradiation area on the sample is approximately 10 mm × 20 mm, and the power is 300W. 8.2.5 XPS Configuration The XPS configuration that should be reported, including the angle between the X-ray direction of the sample on the sample and the average receiving direction of the analyzer, X-ray into The angle of incidence of the photoelectrons relative to the surface normal to the angle of the sample relative to the surface normal, and the plane of incidence with respect to the X-ray The azimuth of the analyzer should also be reported. Example. The angle between the X-ray direction and the axial direction of the analyzer is 45°, and the X-ray is perpendicular to the surface of the sample, and the photoelectron emission angle relative to the normal of the sample surface is 0°, 25°, 37°, 53°, and 58°, the analyzer azimuth is 22.5° with respect to the X-ray incident plane. 8.2.6 Charge control Special instrument components for charge control should be reported. Specific experimental conditions for charge control should be reported (eg, in units of V) The beam voltage, the total beam current from the electron beam of the neutralizing gun is μA). Example. For a neutralization gun, the beam spot voltage is -1.4V (relative to the instrument ground) and the total beam current measured on clean silver is 10μA. 8.2.7 Ion gun parameters for sputter depth analysis Ion gun parameters such as ion species, beam voltage, beam current, beam spot size, and scanning sputtering range for sputtering depth profiling should be reported. Small, angle of incidence, sputtering rate, and mass filter (if used). Example 1. The ion species is Ar, the beam voltage is 1 kV, the beam current is 500 nA, the beam spot size is 300 μm, and the scanning sputtering range is 2 mm × 2 mm. The angle was 45° and the sputtering rate for SiO2 was 3 nm/min. Example 2. The ion type is C60, the beam voltage is 10kV, the beam current is 10nA, the beam spot size is 100μm, and the scanning sputtering range is 2mm×2mm, incident. The angle is 20°, the sputtering rate for SiO2 is 3 nm/min, and the mass filter is used to select a 10 keV C60 beam. 8.3 Analysis parameters 8.3.1 Overview All methods and parameters used in the data analysis should be reported. Some of the methods and parameters described here, such as for analyzer transmission Function correction, methods for peak intensity calculations (such as peak area or peak height), and methods for background subtraction (and start and end energy) It is common to all methods. If the composition of the membrane is reported, the type of relative sensitivity factor and the cause should be reported for each peak. The value of the child. Table 3 gives examples of the various analysis parameters and their descriptions. Example. The correction of the transfer function is obtained by comparing the measured peak area divided by the energy value with the reduction ratio, and the intensity is calculated using the peak surface. Product, using an iterative Shirley background, the starting and ending energies of Si2p are 107 eV and 97 eV, respectively, and the average base of Si2p is relatively sensitive. The degree factor is 0.368. 8.3.2 IMFP When calculating the film thickness using conventional XPS, peak shape analysis, and XPS deep sputtering profiling, the number of IMFPs used should be reported. Value and its data source. Example. Under AlKα X-ray, the IMFP value of the Si2p peak is 3.2 nm, which is obtained from TPP-2M in [17]. 8.3.3 Single scattering albedo As described in Appendix A, if a single scattering albedo is used in the film thickness calculation, its value should be reported. Example. The single scattering albedo value of the Si2p peak is 0.111 under AlKα X-ray. The value is the ratio of IMFP to the sum of IMFP and TRMFP Perform the calculation [18] as described in Appendix A. 8.3.4 Parameters of peak shape analysis The selected structural model (eg, buried film, exponential depth profile, uniform depth profile, coated substrate) should be reported and selected Values of the B, C, and D parameters in the Tougaard inelastic scattering section equation (for example, for metals and oxides, polymers, SiO2, Si, Ge, and Al[83]). Appendix C gives the structural model and various parameter information. Example. The morphological model selects the coated substrate. For metals and oxides, the recommended values for parameters B and C are 2866eV2 and 1643eV2, respectively (not used). Parameter D). 8.3.5 Variable angle XPS parameters The type of algorithm for depth distribution reconstruction should be reported. If the maximum entropy algorithm is used, the regularization constant value of the final result should be reported. should Report any corrections in the depth profile (eg, for asymmetric parameters, sample crystallinity, surface roughness, elastic scattering). Appendix B Information on the analysis algorithm and corrections is given. Example. Using the maximum entropy method, the value of the regularization constant α in the calculation is fixed at 5 × 10 -4 [19]. 8.3.6 Special methods Any particular method used in data analysis should be reported (eg, curve fitting of analytical chemical states, linear least squares fitting, mesh) Standard factor analysis). Example. The Si2p spectrum is curve fitted to determine the str...

Tips & Frequently Asked Questions:

Question 1: How long will the true-PDF of GB/T 36401-2018_English be delivered?

Answer: Upon your order, we will start to translate GB/T 36401-2018_English as soon as possible, and keep you informed of the progress. The lead time is typically 2 ~ 4 working days. The lengthier the document the longer the lead time.

Question 2: Can I share the purchased PDF of GB/T 36401-2018_English with my colleagues?

Answer: Yes. The purchased PDF of GB/T 36401-2018_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.

Question 3: Does the price include tax/VAT?

Answer: Yes. Our tax invoice, downloaded/delivered in 9 seconds, includes all tax/VAT and complies with 100+ countries' tax regulations (tax exempted in 100+ countries) -- See Avoidance of Double Taxation Agreements (DTAs): List of DTAs signed between Singapore and 100+ countries

Question 4: Do you accept my currency other than USD?

Answer: Yes. If you need your currency to be printed on the invoice, please write an email to [email protected]. In 2 working-hours, we will create a special link for you to pay in any currencies. Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.