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GB/T 36053-2018: Evaluation of thickness, density and interface width of thin films by X-ray reflectometry -- Instrumental requirements, alignment and positioning, data collection, data analysis and reporting
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Evaluation of thickness, density and interface width of thin films by X-ray reflectometry -- Instrumental requirements, alignment and positioning, data collection, data analysis and reporting
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GB/T 36053-2018
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Basic data | Standard ID | GB/T 36053-2018 (GB/T36053-2018) | | Description (Translated English) | Evaluation of thickness, density and interface width of thin films by X-ray reflectometry -- Instrumental requirements, alignment and positioning, data collection, data analysis and reporting | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | G04 | | Classification of International Standard | 71.040.40 | | Word Count Estimation | 30,395 | | Date of Issue | 2018-03-15 | | Date of Implementation | 2019-02-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 36053-2018: Evaluation of thickness, density and interface width of thin films by X-ray reflectometry -- Instrumental requirements, alignment and positioning, data collection, data analysis and reporting
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Evaluation of thickness, density and interface width of thin films by X-ray reflectometry--Instrumental requirements, alignment and positioning, data collection, data analysis and reporting
ICS 71.040.40
G04
National Standards of People's Republic of China
X-ray reflectometry measures the thickness of the film,
Density and interface width instrument requirements, collimation and positioning,
Data Acquisition, Data Analysis and Reporting
(ISO 16413.2013, IDT)
Published by.2018-03-15
2019-02-01 Implementation
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
China National Standardization Administration released
Directory
Preface I
Introduction II
1 Scope 1
2 Terms, definitions, symbols, and abbreviations 1
2.1 Terms and Definitions 1
2.2 Symbols and Abbreviations 3
3 Instrument Requirements, Collimation, and Positioning Guide 4
3.1 Scanning Instrument Requirements 4
3.2 Instrument Collimation 7
3.3 Sample Collimation 8
4 Data Acquisition and Storage 9
4.1 Overview 9
4.2 Data Scan Parameters 9
4.3 Dynamic Range 10
4.4 Steps (peak definition) 10
4.5 Acquisition Time (Accumulated Count) 10
4.6 Segmented Data Acquisition 10
4.7 Reduce Noise 10
4.8 Detector 11
4.9 Environment 11
4.10 Data Storage 11
5 Data Analysis 11
5.1 Preliminary data processing 11
5.2 Sample Modeling 12
5.3 XRR Data Simulation 13
5.4 General Example 14
5.5 Data Fitting 17
6 The necessary information in the XRR analysis report 18
6.1 Overview 18
6.2 Experiment details 18
6.3 Analysis (simulation and fitting) procedure 18
6.4 Method of Reporting XRR Curves 19
Appendix A (Informative) Sample Silicon Oxynitride Wafer Measurement Report 22
Reference 26
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard uses the translation method equivalent to the use of ISO 16413.2013 "X-ray reflectometry measurement of film thickness, density and interface width
Instrument requirements, alignment and positioning, data acquisition, data analysis and reporting."
Please note that some of the contents of this document may involve patents. The issuing agency of this document does not assume responsibility for identifying these patents.
This standard is proposed and managed by the National Microbeam Analysis Standardization Technical Committee (SAC/TC38).
This standard was drafted by. China Institute of Metrology.
The main drafters of this standard. Wang Hai, Wang Meiling, Zhang Airui, Song Xiaoping.
Introduction
X-ray reflectometry (XRR) can be widely used to measure thickness on flat substrates at the appropriate wavelengths of thin films, devices and X-rays
Thicknesses, densities, and interface widths of single and multi-layer films between about 1 nm and 1 μm. Interface width is a general term, usually
It refers to the interface or surface roughness and/or the density gradient across the interface. In the X-ray irradiation range, the sample is required to be laterally uniform. Usually, the table
The information on the amount of material provided by the facet chemistry analysis method needs to be converted to estimate the thickness. In contrast, XRR can provide direct traceability to long
Degrees of thickness. XRR is a powerful film thickness measurement method and is traceable to SI units.
Chapter 3 describes the main requirements for equipment that is suitable for acquiring high-quality specular X-ray reflectivity data, as well as useful and accurate
Make sure the required sample collimation and positioning requirements are measured.
Chapter 4 describes the main contents of data acquisition. Its purpose is to obtain high quality specular X-ray reflectivity data and its application.
For data processing and modeling. Traditional data acquisition is performed in a single measurement with direct data input. However, recent data
Acquisition is usually performed by commanding the instrument for multiple measurements. In addition to the operating mode, if there is a software program that controls the instrument, it can also pass
Dynamic test scripts to collect data.
Chapter 5 describes the basic principles for analyzing specular XRR data for obtaining meaningful information about samples of physical significance. Although the mirror
The XRR fitting process is complicated, but can be carried out to a certain degree and the user's clear simplification on the premise of ensuring quality. There are many patents or non-professional
Lee's XRR data simulation and fitting software packages, their theoretical and algorithmic descriptions are outside the scope of this standard. In the right place
Will provide some references for interested readers.
Chapter 6 lists the information required to report on the XRR experiment and makes a brief description of possible ways to present XRR data and results.
To sum up. When more than one method is available, propose the preferred method.
This standard is not a textbook. It is a standard for conducting XRR measurement and analysis. Technical explanations are available
Appropriate references [eg. "X-RayMetrologyinSemiconductor" by D. Keith Bowen and Brian K. Tanner
Manufacturing (X-ray metrology in semiconductor manufacturing)", Taylor and Francis, London (2006); by M. Tolan
"X-ray Reflectivity from SoftMatterThin Films", SpringerTractsin
ModernPhysicsvol.148 (1999); U. Pietsch, V.Holy, and T.Baumbach co-authored "HighResolutionX-Ray
ScatteringfromThinFilmstoLateralNanostructures (High Resolution X-ray Scattering from Thin Films to Horizontal Nanostructures
(Injection)", Springer (2004); J.Dailant and A.Gibaud, co-author of "X-rayandNeutronReflectivity. Principlesand
Applications (X-Ray and Neutron Reflection. Principles and Applications), Springer (2009)].
This standard does not consider the safety aspects related to the use of X-ray equipment. In the measurement process, compliance with relevant laws and regulations related to safety
The program is the responsibility of the user.
X-ray reflectometry measures the thickness of the film,
Density and interface width instrument requirements, collimation and positioning,
Data Acquisition, Data Analysis and Reporting
1 Scope
This standard specifies that X-ray reflectometry (XRR) is used to measure single-planar substrates with thicknesses between approximately 1 nm and 1 μm.
Thickness, density, and interface width of layers and multilayers.
The method uses monochromatic parallel light for angle or scattering vector scanning. Similar considerations apply to using distributed detectors
The case of converging beams or scanning wavelengths for parallel data acquisition is not described in this standard. For X-ray diffuse reflectance
In terms of surgery, the experimental requirements are similar, but this standard does not include this part.
Measurements can be performed on devices with different configurations. These devices include laboratory instruments, reflectometers on synchrotron beam lines
And industrial automation systems.
It should be noted that, during data acquisition, the possible instability of the film will cause the accuracy of the measurement results to decrease. XRR single use
The incident X-ray beam at a wavelength does not provide the chemical information of the film, so care should be taken that the surface of the sample may be contaminated or reacted. Surface change
Chemicals can seriously affect the accuracy of the outermost film measurements.
2 Terms, definitions, symbols, and abbreviations
2.1 Terms and Definitions
The following terms and definitions apply to this document.
2.1.1
Incidence angle
The angle between the incident beam and the sample surface.
2.1.2
Critical angle criticalangle
Θc
The angle between the incident beam and the surface of the sample. Below this angle, the X-rays undergo total reflection of the surface, above which x-rays penetrate.
Below the sample surface.
Note. The critical angle of the known sample material or structure can be obtained by simulation software or the approximate formula θc ≈ 2δ, where 1-δ is a complex X-ray refraction.
The real part of the rate n=1-δ-iβ.
2.1.3
Sample length specimenlength
The sample size at the incident and reflected X-ray planes and in the sample plane.
2.1.4
Sample width specimenwidth
The sample size perpendicular to the incident and reflected X-ray planes and in the sample plane.
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