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GB/T 35445-2017 English PDF

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GB/T 35445-2017: Silk -- Electronic test method for defects and evenness of raw silk
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Basic data

Standard ID GB/T 35445-2017 (GB/T35445-2017)
Description (Translated English) Silk -- Electronic test method for defects and evenness of raw silk
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard W40
Classification of International Standard 59.080.20
Word Count Estimation 18,136
Date of Issue 2017-12-29
Date of Implementation 2018-07-01
Regulation (derived from) National Standards Bulletin 2017 No. 32
Issuing agency(ies) General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

GB/T 35445-2017: Silk -- Electronic test method for defects and evenness of raw silk

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Silk - Electronic test method for defects and evenness of raw silk ICS 59.080.20 W40 National Standards of People's Republic of China Silk raw silk defects, dry Electronic test methods (ISO 15625.2014, IDT) 2017-12-29 Posted 2018-07-01 implementation General Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China China National Standardization Administration released

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard uses the translation method identical with ISO 15625.2014 "silk raw silk defects, dry electronic test method." The documents of our country that are consistent with the corresponding international documents that are normative references in this standard are as follows. --- GB/T 4743-2009 Textiles - Determination of normal yarn skein yarn (ISO 2060.1994, MOD) --- GB/T 6529-2008 Textiles conditioning and testing standard atmosphere (ISO 139.2005, MOD) This standard made the following editorial adjustments. --- In order to increase the normative form, the table D.1 header position adjustment unit to the bottom of the project. This standard proposed by the China Textile Industry Federation. This standard by the National Standardization Technical Committee silk (SAC/TC401) centralized. This standard was drafted unit.Zhejiang Silk Technology Co., Ltd., Zhejiang Entry-Exit Inspection and Quarantine Bureau silk test center, Zhejiang Kai Xi Ya International Co., Ltd., Suzhou University, Jiaxing Edir Silk Co., Ltd., Rizhao Haitong cocoon Silk Group Co., Ltd. The main drafters of this standard. Zhou Ying, Dong lock pull, Bian Xing Er, Xu Jianmei, Zhao Zhimin, Wu Dongping, Xu Jin, Pan Lulu, Gu Qingqing, An Xia.

Introduction

The current raw silk defects and stems are blackboard test, the test principle is that in a particular light inspection room, the use of silk in the black The area covered by the plate and the effect of translucent reflection were observed visually and compared with standard photos for silk formation, cleanliness and cleanliness. The principle of the capacitance method in the raw silk electronic test method is that when the thread passes the sensor test slot with a certain length during the test, There is a positive correlation between the change of wire quality and the change of capacitance, and the size and type of defect are defined by setting the parameter range of quality variation. Photoelectricity test principle is. Detection, the cross-section of the wire and projection changes was positively correlated, by setting the degree of cross-section changes in the parameter range Wai to define the size and type of defects. Photoelectric method can make up for the shortcomings of the capacitive method can not reflect the defect morphology; and the capacitive method can make up the photoelectric method can not accurately measure the students The lack of evenness of the yarn. As a single method can not reflect the defect, the complete information stem, so the standard capacitor, optoelectronic combination Raw silk electronic detector to detect defects in raw silk and dry. Silk raw silk defects, dry Electronic test methods

1 Scope

This standard specifies the use of capacitors and photogenerated wire electronic detector on the raw silk defects, the test of dry strip test method. This standard applies to the nominal denier in the 13.3dtex ~ 76.7dtex (12den ~ 69den) of stranding and tube raw silk, soaked silk.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version applies to this article Pieces. For undated references, the latest edition (including all amendments) applies to this document. ISO 139 Textiles for conditioning and testing of the standard atmosphere (Textiles-Standardatmospheresforconditioningand testing ISO 2060 Textiles - Determination of normalized yarn skein load - Textiles-Yarn frompackages-Determinationof lineardensity (massperunitlength) bytheskeinmethod]

3 Terms and definitions

The following terms and definitions apply to this document. 3.1 Raw silk rawsilk Silkworm cocoon as raw material, according to a certain degree of silk technology and quality requirements with a number of mechanical cocoon silk glue together with the system made of filaments. 3.2 Soakedsilk soakeds Using special soaking aids by a certain process requirements soaked raw silk. 3.3 Electronic test methods electronictestmethod The use of capacitance and photoelectric detection devices on the raw silk defects and stems were detected. 3.4 Scratch slub Capacitance method. The quality of the sample exceeds the average quality of the test sample of 80%, length ≥ 1mm defects. Optoelectronic method, the cross-sectional area of the sample exceeds 80% of the average value of the test sample, and defects of length ≥1 mm. Note.Cut defects can be divided into rough, small rough, classification rules see A.1.1. 3.5 Rough thickplace Capacitance method. The quality of the sample exceeds the average quality of the test sample of 35% to 80%, length ≥ 10mm defects. Photoelectric method, the cross-sectional area of the sample exceeds 30% ~ 80% of the average value of the test sample, and the length of the defect is ≥10mm.

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