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www.ChineseStandard.net Database: 189760 (18 Oct 2025)

GB/T 34900-2017 English PDF

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GB/T 34900-2017: Micro-electromechanical system technology -- Measuring method for residual strain measurements of MEMS microstructures using an optical interferometer
Status: Valid

Standard ID	Contents [version]	USD	STEP2	[PDF] delivered in	Standard Title (Description)	Status	PDF
GB/T 34900-2017	English	279	Add to Cart	3 days [Need to translate]	Micro-electromechanical system technology -- Measuring method for residual strain measurements of MEMS microstructures using an optical interferometer	Valid	GB/T 34900-2017

PDF similar to GB/T 34900-2017

Standard similar to GB/T 34900-2017

GB/T 43770 GB/T 43978 SAMR 76 GB/T 34894 GB/T 34893

Basic data

Standard ID	GB/T 34900-2017 (GB/T34900-2017)
Description (Translated English)	Micro-electromechanical system technology -- Measuring method for residual strain measurements of MEMS microstructures using an optical interferometer
Sector / Industry	National Standard (Recommended)
Classification of Chinese Standard	L55
Classification of International Standard	31.200
Word Count Estimation	14,166
Date of Issue	2017-11-01
Date of Implementation	2018-05-01
Regulation (derived from)	National Standard Announcement 2017 No. 29
Issuing agency(ies)	General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

GB/T 34900-2017: Micro-electromechanical system technology -- Measuring method for residual strain measurements of MEMS microstructures using an optical interferometer

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Micro-electromechanical system technology-Measuring method for residual strain measurements of MEMS microstructures using an optical interferometer ICS 31.200 L55 National Standards of People's Republic of China Microelectromechanical system (MEMS) technology MEMS microstructure based on optical interference Residual strain measurement method Posted.2017-11-01 2018-05-01 implementation General Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China China National Standardization Administration released Directory Foreword Ⅲ 1 Scope 1 2 Normative references 1 3 Terms and definitions 1 4 measurement method 1 5 main factors affecting the measurement uncertainty 6 Appendix A (informative) Optical interference microscope typical form and main technical features 7 Appendix B (Normative) Fitting cosine functions of surface contour lines and calculating deformations

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard by the National Microelectromechanical Technology Standardization Technical Committee (SAC/TC336) and focal point. The main drafting units of this standard. Tianjin University, Machine Productivity Promotion Center, the National Instrument Components Quality Supervision and Inspection Center, South Beijing Institute of Technology, China Electronics Technology Group Corporation thirteenth Institute. The main drafters of this standard. Guo Tong, Hu Xiaodong, Li Haibin, Yu Zhenyi, Qiu Anping, Cheng Hongbing, Cui Bo, Zhu Yue. Microelectromechanical system (MEMS) technology MEMS microstructure based on optical interference Residual strain measurement method

1 Scope

This standard specifies the method of residual strain measurement based on the surface morphology of micro double ended fixed-beam structure obtained by optical interference microscope. This standard applies to the surface reflectance of not less than 4% and the use of optical interference microscope to obtain the surface morphology of micro-double-ended beam structure.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version applies to this article Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 3505 Geometrical product specifications (GPS) Surface texture contouring Terms, definitions, and surface texture parameters GB/T 26111 Microelectromechanical System (MEMS) technology terminology General principles of microgeometry assessment of microelectromechanical systems (MEMS) GB/T 26113 GB/T 34893-2017 Microelectromechanical System (MEMS) technology MEMS micro-structure in-plane length measurement based on optical interference method

3 Terms and definitions

GB/T 3505, GB/T 26111 and GB/T 34893-2017 as defined by the following terms and definitions apply to this document. 3.1 Residual strain residualstrain Exist in the material, the structure due to plastic deformation, uneven temperature distribution, the formation of non-uniform phase transition and maintain a balance of internal strain.

4 measurement method

4.1 General 4.1.1 micro-double-ended beam due to the process of introducing residual stress, resulting in bending deformation of the beam structure, obtained by measuring the bending deformation Residual strain in the micro-double-ended beam is shown in Fig.1.

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