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GB/T 34210-2017: Test method for determining the orientation of sapphire single crystal
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| GB/T 34210-2017 | English | 119 |
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Test method for determining the orientation of sapphire single crystal
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GB/T 34210-2017
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Basic data | Standard ID | GB/T 34210-2017 (GB/T34210-2017) | | Description (Translated English) | Test method for determining the orientation of sapphire single crystal | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H21 | | Classification of International Standard | 77.040 | | Word Count Estimation | 6,655 | | Date of Issue | 2017-09-07 | | Date of Implementation | 2018-06-01 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | GB/T 34210-2017: Test method for determining the orientation of sapphire single crystal---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for determining the orientation of sapphire single crystal
ICS 77.040
H21
National Standards of People's Republic of China
Sapphire crystal single crystal orientation method
2017-09-07 Posted
2018-06-01 implementation
General Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
China National Standardization Administration released
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards
Technical Committee Materials Branch (SAC/TC203/SC2) co-sponsored and centralized.
This standard was drafted unit. Chinese Academy of Sciences Shanghai Institute of Optics and Fine Mechanics, Dandong New Oriental Crystal Instrument Co., Ltd., Shenzhen Zhong An measured
Standard Technology Co., Ltd., Dongguan Huayuan Optoelectronics Technology Co., Ltd.
The main drafters of this standard. Hang Yin, Zhen Wei, Yin Jigang, Zhao Songbin, Hong Jiaqi, Zhang Lianhan, Zhang Yi, Wei Wei.
Sapphire crystal single crystal orientation method
1 Scope
This standard specifies the use of X-ray orienting apparatus to determine the sapphire crystal orientation.
This standard applies to the determination of sapphire crystal orientation parallel to the low index crystal plane.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version applies to this article
Pieces. For undated references, the latest edition (including all amendments) applies to this document.
GB/T 1555 semiconductor crystal orientation measurement method
GB/T 14264 semiconductor materials terminology
JB/T 5482 X-ray crystal orientation instrument
3 Terms and definitions
GB/T 1555, GB/T 14264 and JB/T 5482 defined terms and definitions apply to this document.
4 method principle
The crystal orientation is determined based on the X-ray diffraction principle. Single crystal is composed of three-dimensional periodic structure of atoms, can be seen as
Is a series of parallel planes formed by a vertical distance d of the atomic arrangement space when a bundle of parallel monochromatic X-rays is incident upon the plane and
Diffraction (reflection) occurs when the X-ray is irradiated with an optical path difference between adjacent crystal planes that is an integer multiple of its wavelength, that is, n times. Use counters to explore
Measured diffraction line, according to its location to determine the crystal orientation of single crystal, shown in Figure 1.
Figure 1 X-ray irradiation onto a single crystal plane geometric reflection conditions
When the angle θ between the incident beam and the reflecting crystal plane, the X-ray wavelength λ, the interplanar distance d and the diffraction order n satisfy the following Bragg
The law (1), X-ray diffraction beam intensity will reach the maximum.
nλ = 2dsinθ (1)
For the hexagonal system, the spacing d according to equation (2).
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