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Test method for dislocation density of sapphire single crystal
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GB/T 33763-2017
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Basic data Standard ID | GB/T 33763-2017 (GB/T33763-2017) | Description (Translated English) | Test method for dislocation density of sapphire single crystal | Sector / Industry | National Standard (Recommended) | Classification of Chinese Standard | H25 | Classification of International Standard | 77.040 | Word Count Estimation | 7,777 | Date of Issue | 2017-05-31 | Date of Implementation | 2017-12-01 | Quoted Standard | GB/T 14264 | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | Summary | This standard specifies the sapphire single crystal dislocation density measurement method. This standard is suitable for the measurement of dislocation density of sapphire single crystal with the dislocation density of 0/cm ^ 2 ~ 100 000/cm ^ 2 after polishing. The detection surface is {0001}, {1120}, {1012}. {1010} face. |
GB/T 33763-2017: Test method for dislocation density of sapphire single crystal---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for dislocation density of sapphire single crystal
ICS 77.040
H25
National Standards of People's Republic of China
Sapphire single crystal dislocation density measurement method
2017-05-31 released
2017-12-01 implementation
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
China National Standardization Management Committee released
Foreword
This standard is drafted in accordance with the rules given in GB/T 1.1-2009.
This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the national semiconductor equipment and materials standards
(SAC/TC203/SC2) jointly proposed and centralized.
The drafting of this standard. Jiangsu Association Xin soft control equipment Technology Development Co., Ltd., Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, deep
Shenzhen in the standard measurement Technology Co., Ltd.
The main drafters of this standard. Xue Kangmei, Huang Xiukang, Hang Yin, Yin Jigang, field, Zhang Yongbo, Zhang Yi.
Sapphire single crystal dislocation density measurement method
1 Scope
This standard specifies the sapphire single crystal dislocation density measurement method.
This standard is applicable to the measurement of the dislocation density of sapphire single crystal with the dislocation density of 0/cm2 ~ 100000/cm2 after polishing,
The detection faces are {0001}, {1120}, {1012}, {1010} faces.
2 normative reference documents
The following documents are indispensable for the application of this document. For dated references, only the dated edition applies to this article
Pieces. For undated references, the latest edition (including all modifications) applies to this document.
GB/T 14264 terminology for semiconductor materials
3 terms and definitions
GB/T 14264 The terms and definitions defined apply to this document.
4 method summary
The method uses the preferred chemical etching technique to show dislocation. When corroding the crystal surface with some chemical etchant, on the crystal surface
Dislocation line outcrop, the corrosion rate is faster, and thus easily formed by some low index surface with angular corners with a specific shape of the corrosion pits. can
The dislocation density Nd is identified by the number of corrosion pits per unit area, calculated according to formula (1)
Nd =
(1)
Where.
Nd - dislocation density, in units of per square centimeter (per/cm2);
n - the number of dislocation lines passing through the field area S, in units of;
S --- field of view, in square centimeters (cm2).
5 chemical reagents
5.1 potassium hydroxide (ρ ≈ 2.04 g/cm3), analytical grade.
5.2 sodium hydroxide (ρ ≈ 2.13g/cm3), analytical grade.
5.3 silica (ρ ≈ 2.2 g/cm3), analytical grade.
5.4 dilute hydrochloric acid, ρ≈1.047g/mL.
6 equipment
6.1 metallographic microscope. magnification 50 times to 500 times.
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