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GB/T 31958-2023 English PDF

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GB/T 31958-2023: Substrate glass for amorphous silicon thin film transistor liquid crystal display device
Status: Valid

GB/T 31958: Evolution and historical versions

Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
GB/T 31958-2023English419 Add to Cart 4 days [Need to translate] Substrate glass for amorphous silicon thin film transistor liquid crystal display device Valid GB/T 31958-2023
GB/T 31958-2015English599 Add to Cart 4 days [Need to translate] Substrate glass for thin film transistor liquid crystal display device Obsolete GB/T 31958-2015

PDF similar to GB/T 31958-2023


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Basic data

Standard ID GB/T 31958-2023 (GB/T31958-2023)
Description (Translated English) Substrate glass for amorphous silicon thin film transistor liquid crystal display device
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard Q34
Classification of International Standard 81.040.30
Word Count Estimation 22,216
Date of Issue 2023-08-06
Date of Implementation 2024-03-01
Older Standard (superseded by this standard) GB/T 31958-2015
Issuing agency(ies) State Administration for Market Regulation, China National Standardization Administration

GB/T 31958-2023: Substrate glass for amorphous silicon thin film transistor liquid crystal display device


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ICS 81.040.30 CCSQ34 National Standards of People's Republic of China Replace GB/T 31958-2015 Amorphous silicon thin film transistor for liquid crystal display Substrate glass 2024-03-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration Committee

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. This document replaces GB/T 31958-2015 "Substrate Glass for Thin Film Transistor Liquid Crystal Displays" and is consistent with GB/T 31958-2015 In addition to structural adjustments and editorial changes, the main technical changes are as follows. a) The terms and definitions of point defects, surface contamination, scratches, falling pieces, missing corners, and effective areas have been deleted (see 3.1~3.5 of the.2015 edition, 3.11), the definitions of positioning angle and right angle have been changed (see 3.4, 3.6, 3.12 and 3.14 of the.2015 version); b) Changed the requirements for appearance quality (see 4.1, 4.1 of the.2015 version); c) Changed the requirements for length deviation and width deviation (see 4.2.1,.2015 version of 4.2.1); d) Changed the requirements for thickness difference (see 4.2.3, 4.2.2 of the.2015 version); e) Changed the requirements for cutting angle deviation and positioning angle deviation (see 4.2.4, 4.2.3 of the.2015 edition); f) The requirements for waviness and warpage have been changed (see 4.3 and 4.5, 4.3 and 4.4 of the.2015 edition); g) Added surface roughness requirements (see 4.4); h) Added thermal conductivity, softening point, annealing point, reheat line shrinkage, stress, elastic modulus, volume resistivity, dielectric constant, dielectric Loss performance requirements (see 4.6); i) Changed the performance indicators of average linear thermal expansion coefficient, density, and strain point (see 4.6, 4.5~4.7 of the.2015 version); j) Changed the performance indicators of chemical durability (see 4.6, 4.9 of the.2015 version); k) The test method for appearance quality has been changed (see 5.2,.2015 version of 5.2); l) Changed the thickness measurement diagram (see 5.3.2, 5.3.2 of the.2015 version); m) Changed the positioning angle and cut angle measurement diagram (see 5.3.3,.2015 version of 5.3.3); n) Changed the test method and measurement diagram of right angle (see 5.3.4,.2015 version of 5.3.4); o) The test method for waviness has been changed (see 5.4,.2015 version of 5.4); p) Increased surface roughness, thermal conductivity, softening point, annealing point, reheat line shrinkage, stress, elastic modulus, volume resistivity, dielectric Test methods for electrical constant and dielectric loss (see 5.5, 5.7, 5.9, 5.10, 5.12, 5.14, 5.15, 5.17~5.19); q) The test method for warpage has been changed (see 5.6, 5.5 of the.2015 edition); r) The test method for the average linear thermal expansion coefficient has been changed (see 5.8, 5.6 of the.2015 edition); s) The test method for strain point has been changed (see 5.11, 5.8 of the.2015 edition); t) The test method for density has been changed (see 5.13, 5.7 of the.2015 edition); u) The test method for transmittance has been changed (see 5.16, 5.9 of the.2015 edition); v) Changed the test method for chemical durability (see 5.20, 5.10 of the.2015 version); w) The test method for alkali metal oxide content has been changed (see 5.21, 5.11 of the.2015 edition); x) Added individual judgment content, including items listed in surface roughness and physical and chemical properties (see 6.3.4.1); y) Changes in transportation and storage requirements (see 7.3 and 7.4,.2015 version of 7.3 and 7.4). Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is proposed by China Building Materials Federation. This document is under the jurisdiction of the National Industrial Glass and Special Glass Standardization Technical Committee (SAC/TC447). This document was drafted by. Caihong Group Co., Ltd., China National Building Materials Glass New Materials Research Institute Group Co., Ltd., Caihong Display Device Co., Ltd. Co., Ltd., Bengbu Zhongguo Electronics Technology Co., Ltd., China National Testing and Testing Holding Group Co., Ltd., Beijing University of Technology, new glass materials Innovation Center (Anhui) Co., Ltd., Dongxu Group Co., Ltd., Rainbow Group (Shaoyang) Special Glass Co., Ltd., Shenzhen Yuchuang Display Technology Technology Co., Ltd., Hunan Shaohong Special Glass Co., Ltd. The main drafters of this document. Wu Xiaoxi, Cao Zhiqiang, Jin Liangmao, Li Miao, Tian Yingliang, Li Junjie, Guan Min, Li Qing, Xue Xinjian, Zhao Jinbao, Liu Zhengmao, Shen Yuguo, Zhang Xiaodong, Xu Lihua, Zhao Zhiyong, Guo Li, Duan Meijiang, Hu Hengguang, Gao Yu, Li Na, Sun Longwen, Fan Bo. This document was first published in.2015 and this is the first revision. Amorphous silicon thin film transistor for liquid crystal display Substrate glass

1 Scope

This document specifies the requirements for substrate glass for amorphous silicon thin film transistor liquid crystal displays, test methods, inspection rules, packaging, marking, Transportation and storage. This document applies to the design, production, and research and development of substrate glass for amorphous silicon thin film transistor liquid crystal displays (hereinafter referred to as "substrate glass") and testing.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document. GB/T 1409 Measurement of permittivity and dielectric loss factor of electrical insulating materials at power frequency, audio frequency, and high frequency (including meter wave wavelength) Recommended method GB/T 1549 Chemical analysis methods for fiber glass GB T2680-2021 Architectural glass visible light transmittance, direct sunlight transmittance, total solar energy transmittance, ultraviolet transmission Compared with the determination of relevant window glass parameters GB/T 2828.1-2012 Enumeration sampling inspection procedures Part 1.Batch-by-batch inspection sampling retrieved by acceptance quality limit (AQL) plan GB/T 5432 Glass density determination buoyancy method GB/T 5700-2008 Lighting measurement methods GB/T 16920 Determination of average linear thermal expansion coefficient of glass GB/T 28195 Glass softening point test method GB/T 31838.7-2021 Dielectric and resistive properties of solid insulating materials Part 7.Resistive properties (DC method) High temperature Measure volume resistance and volume resistivity GB/T 32639 Flat panel display substrate glass terminology GB/T 32642 Measurement method for surface roughness of flat panel display substrate glass GB/T 32643 Measurement method for surface waviness of flat panel display substrate glass GB/T 32644-2016 Test method for chemical durability of flat panel display substrate glass GB/T 37780 Test methods for elastic modulus, shear modulus and Poisson's ratio of glass materials GB/T 38711 Test method for reheat shrinkage of ultra-thin glass Laser method GB/T 38712 Test method for thermal conductivity of ultra-thin glass - Heat flow method SJ/T 11039 Test method for annealing point and strain point of electronic glass

3 Terms and definitions

The terms and definitions defined in GB/T 32639, GB/T 38711 and the following apply to this document.

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