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US$679.00 · In stock Delivery: <= 6 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 31359-2015: Test methods of semiconductor lasers Status: Valid
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Test methods of semiconductor lasers
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GB/T 31359-2015
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Basic data | Standard ID | GB/T 31359-2015 (GB/T31359-2015) | | Description (Translated English) | Test methods of semiconductor lasers | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L51 | | Classification of International Standard | 31.260 | | Word Count Estimation | 32,353 | | Date of Issue | 2015-02-04 | | Date of Implementation | 2015-08-01 | | Quoted Standard | GB 7247.1; GB/T 10320; GB/T 15313; GB/T 31358-2015 | | Regulation (derived from) | National Standards Bulletin 2015 No. 3 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This Standard specifies the test method for a semiconductor laser main photoelectric parameters. This Standard applies to testing the main optical parameters of semiconductor lasers. The semiconductor laser module can refer executed. |
GB/T 31359-2015: Test methods of semiconductor lasers---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test methods of semiconductor lasers
ICS 31.260
L51
National Standards of People's Republic of China
A semiconductor laser test methods
Issued on. 2015-02-04
2015-08-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Table of Contents
Introduction Ⅲ
1 Scope 1
2 Normative references 1
3 Terms, definitions and symbols 1
3.1 Terms and definitions
3.2 Symbols and units 1
4 Test conditions and requirements 2
4.1 Environmental Requirements 2
4.2 Test equipment and measurement requirements 2
4.3 Laser Safety Requirements
4.4 tested products to work in claim 3
4.5 Other Requirements 3
5 Test Method 3
5.1 output optical power test 3
5.2 average power test 4
5.3 Peak Power Test 4
5.4 Test pulse energy 6
5.5 output power instability Test 7
5.6 output energy instability test 8
5.7 Operating Current 9
5.8 Operating voltage 10
5.9 threshold current 11
5.10 slope efficiency of 12
Electro-optical conversion efficiency 13 5.11
5.12 Wavelength - Temperature drift 14
5.13 peak wavelength of 15
Spectral width 16 5.14
Center wavelength 16 5.15
5.16 degree of polarization 17
Repetition rate 18 5.17
5.18 pulse width 19
5.19 light intensity distribution 19
5.20 beam width 23
5.21 fast axis divergence and the slow axis divergence 23
Side mode suppression ratio 25 5.22
5.23 cut-off frequency of 26
Examples Appendix A (informative) light intensity distribution 28
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
The standard proposed by China Machinery Industry Federation.
This standard by the National Optical radiation safety and laser equipment Standardization Technical Committee (SAC/TC284) centralized.
This standard was drafted. Xi'an Focuslight Ltd., Xi'an Institute of Optics and Fine Mechanics, Chinese Academy of semiconductor
Body Institute, Beijing Branch of the Laser Technology Co., Ltd., Wuhan laborers Technology Co., Ltd. is the source of photons, China Electronics Technology Group Corporation
13th Research Institute.
The main drafters of this standard. Liu Xingsheng, Zhao Wei, Xu Guodong, Zhang Yanchun, red Yang Jun, Ma Xiaoyu, Tang Qi, Wu Di, Wang Chen-fu, Wang guards,
Xieyan Hu, Wang Chan, Xiaoning, Shi Jun-Hong, Chen Hairong, Li Zhong, Shi Zhaohui, En, Xu Haiming, Zhang new.
A semiconductor laser test methods
1 Scope
This standard specifies the test method for a semiconductor laser main photoelectric parameters.
This standard applies to testing the semiconductor laser main photoelectric parameters. The semiconductor laser component can refer executed.
2 Normative references
The following documents for the application of this document is essential, dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB 7247.1 Safety of laser products - Part 1. Equipment classification, requirements
Electrical safety GB/T 10320 laser equipment and facilities
GB/T 15313 Laser term
GB/T 31358-2015 General specification for semiconductor lasers
3 Terms, definitions and symbols
3.1 Terms and Definitions
GB/T 15313, the terms and definitions GB/T 31358-2015 defined apply to this document.
3.2 Symbols and units
The symbols and units listed in Table 1 are applicable to this document.
Table 1 Symbols and units
Term Symbol Unit
Optical output power Pop mW, W
Average power Pavg mW, W
Pulse energy EJ, mJ
Peak power Pp mW, W
Output power instability SPt -
Output energy instability SEt -
Peak wavelength λp nm
ΔλFWHM nm spectral width
Center wavelength λc nm
Operating current Iop mA, A
Operating voltage Vop mV, V
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