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GB/T 15291-2015: Semiconductor devices -- Part 6: Thyristors
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Basic data | Standard ID | GB/T 15291-2015 (GB/T15291-2015) | | Description (Translated English) | Semiconductor devices -- Part 6: Thyristors | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | K46 | | Classification of International Standard | 83.060 | | Word Count Estimation | 136,152 | | Date of Issue | 2015-12-31 | | Date of Implementation | 2017-01-01 | | Older Standard (superseded by this standard) | GB/T 15291-1994 | | Regulation (derived from) | State Standard Announcement 2015 No.43 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | GB/T 15291-2015: Semiconductor devices -- Part 6: Thyristors---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Semiconductor devices - Part 6. Thyristors
ICS 31.080.20
K46
National Standards of People's Republic of China
Replace GB/T 15291-1994
Semiconductor device
Part 6. Thyristors
(IEC 60747-6..2000, IDT)
2015-12-31 released
2017-01-01 Implementation
General Administration of Quality Supervision, Inspection and Quarantine of the People 's Republic of China
China National Standardization Management Committee released
Directory
Preface Ⅸ
Introduction Ⅺ
1 Scope 1
2 normative reference document 1
3 Terms and definitions 1
3.1 Type of thyristor 2
3.2 Basic terms for static voltage-current characteristics of triode thyristors 5
3.3 Basic terms for static voltage-current characteristics of bipolar thyristors 6
3.4 Three-pole thyristor and two-pole thyristor static voltage - current characteristics (see Figure 1, Figure 2) 7
3.5 Terminology and characteristics of the term. the main voltage 7
3.6 Terminology and characteristics of the term. the main current 10
3.7 Terminology and characteristics of the term. gate voltage, the gate current 14
3.8 terms and characteristics of the terms. power, energy 17
3.9 Terms and conditions of rating and characteristics. recovery time and other characteristics 21
4 text symbol 28
4.1 General rules 28
4.2 Additional general subscript 28
4.3 Text symbols Table 28
4.3.1 Main voltage, anode-cathode voltage (see Figure 15)
4.3.2 Main current, anode current, cathode current (see Figure 16)
4.3.3 Gate voltage 31
4.3.4 Gate current 31
4.3.5 Time Amount 31
4.3.6 other amount 32
4.3.7 Loss of power 32
5 Basic values and characteristics of the reverse-blocking tri-polar thyristor and reverse-conduction tri-polar thyristor 32
5.1 Thermal conditions 32
5.1.1 Recommended temperature 33
5.1.2 Rated conditions 33
5.2 Voltage and current ratings (limits)
5.2.1 Reverse Repetitive Peak Voltage (VRSM) 33
5.2.2 Reverse Repetitive Peak Voltage (VRRM) 33
5.2.3 Reverse operating peak voltage (VRWM) (if applicable) 33
5.2.4 Reverse DC voltage (VR) (when applicable) 33
5.2.5 Do not repeat the peak voltage (VDSM) 33
5.2.6 Off-State Repetitive Peak Voltage (VDRM) 33
5.2.7 OFF operating peak voltage (VDWM) (if applicable) 33
5.2.8 DC voltage (VD (D)) (when applicable) 34
5.2.9 Gate positive peak voltage (anode is positive relative to cathode) (VFGM) 34
5.2.10 Gate positive peak voltage (anode is negative relative to cathode) (VFGM) 34
5.2.11 Gate reverse peak voltage (VRGM) (when applicable) 34
5.2.12 on-state average current (IT (AV)) 34
5.2.13 ON State Repetitive Peak Current (ITRM) (if applicable) 34
5.2.14 Normal square root current (IT (RMS)) (when applicable) 34
5.2.15 On-state Overload Current (IT (OV)) (if applicable) 34
5.2.16 On-State Surge Current (ITSM) 35
5.2.17 On-state DC current (IT (D)) (when applicable) 35
5.2.18 Higher frequency sine wave on-state peak current (ITRM) (when applicable) 35
5.2.19 Higher frequency trapezoidal wave current state peak current (ITRM) (when applicable) 36
5.2.20 Critical rise rate of on-state current (di/dt) 37
5.2.21 No rupture peak current (IRSMC) 37
5.2.22 Gate Positive Peak Current (IFGM) 38
5.3 Other ratings (limit values) 38
5.3.1 Frequency Rating 38
5.3.2 Gate Loss Peak Power (PGM) 38
5.3.3 Environmental rating and enclosure rated thyristors 38
5.3.4 Storage temperature (Tstg) 38
5.3.5 Equivalent junction temperature (Tj) (when applicable) 38
5.4 Electrical characteristics 38
5.4.1 On-state characteristics (when applicable) 38
5.4.2 On-state voltage (VT) 38
5.4.3 Maintain current (IH)
5.4.4 Clean current (IL) 39
5.4.5 Off-State Repetitive Peak Current (IDRM) 39
5.4.6 Reverse Repetitive Peak Current (IRRM) 39
5.4.7 Gate Trigger Current and Gate Trigger Voltage (IGT, VGT) 39
5.4.8 Gate does not trigger current and gate does not trigger voltage (IGD, VGD) 39
5.4.9 Gate control delay time (tgd) 40
5.4.10 Circuit reversal time (tq) 40
5.4.11 Critical rise rate of off-state voltage (dv/dt) 41
5.4.12 Total loss power (Ptot) 41
5.4.13 Recovery Charge (Qr) (when applicable), see Figure 24 43
5.4.14 Reverse Recovery Peak Current (IRM) (when applicable), see Figure 24 43
5.4.15 Reverse recovery time (trr) (when applicable), see Figure 24 43
5.5 Thermal characteristics 43
5.5.1 Junction - Ambient Thermal Resistance (Rth (ja)) 43
5.5.2 Junction - shell thermal resistance (Rth (jc)) 43
5.5.3 Shell - Radiator Thermal Resistance (Rth (ch)) 44
5.5.4 Junction - Radiator Thermal Resistance (Rth (jh)) 44
5.5.5 Junction - Ambient Transient Thermal Impedance (Zth (ja)) 44
5.5.6 junction - shell transient thermal resistance (Zth (jc)) 44
5.5.7 Junction - Radiator Transient Thermal Impedance (Zth (jh)) 44
5.6 Mechanical and other data
5.7 Application Information 44
Basic ratings and characteristics of bidirectional triode thyristors
Thermal conditions
6.1.1 Recommended temperature 44
6.1.2 Rated conditions 44
6.2 Voltage and current ratings (limit values) 45
6.2.1 Do not repeat the peak voltage (VDSM) 45
6.2.2 Off-State Repetitive Peak Voltage (VDRM) 45
6.2.3 Off-State Operating Peak Voltage (VDWM) 45
6.2.4 Main Gate Peak Voltage (VFGM) 45
6.2.5 Negative Gate Peak Voltage (VRGM) 45
6.2.6 Positive side current (IT (RMS)) 45
6.2.7 On-State Repetitive Peak Current (ITRM) (if applicable) 45
6.2.8 On-state Overload Current (IT (OV)) 45
6.2.9 On-state inrush current (ITSM) 45
6.2.10 On-state current critical rate of increase (di/dt) 46
6.2.11 Gate current 46
6.3 Other ratings (limit values) 46
6.3.1 Frequency Rating 46
6.3.2 Gate Average Power (PG (AV)) 46
6.3.3 Gate Peak Power (PGM) 46
6.3.4 Environmental rating and enclosure rated bidirectional triode thyristor 46
6.3.5 Storage temperature (Tstg) 47
6.3.6 Equivalent junction temperature (Tj) 47
6.4 Electrical characteristics (unless otherwise noted, at ambient temperature or at 25 ° C)
6.4.1 On-state characteristics (when applicable) 47
6.4.2 On-state voltage (VT) 47
6.4.3 Maintain current (IH) 47
6.4.4 Clean current (IL) 47
6.4.5 Off-State Repetitive Peak Current (IDRM) 47
6.4.6 Critical rise rate of off-state voltage (dv/dt) 47
6.4.7 Critical voltage rise rate (dv/dt (c)) 48
6.4.8 Gate Trigger Current and Gate Trigger Voltage (IGT, VGT) 48
6.4.9 Gate does not trigger current and gate does not trigger voltage (IGD, VGD) 48
6.4.10 Gate control opening delay time (tgd) 49
6.4.11 Total Loss Power (Ptot) 49
6.5 Thermal Characteristics 49
6.5.1 Junction - Ambient Thermal Resistance (Rth (ja)) 49
6.5.2 junction - shell thermal resistance (Rth (jc)) 49
6.5.3 Shell - Radiator Thermal Resistance (Rth (ch)) 49
6.5.4 Junction - Radiator Thermal Resistance (Rth (jh)) 49
6.5.5 Junction - Ambient Transient Thermal Impedance (Zth (ja)) 50
6.5.6 junction - shell transient thermal resistance (Zth (jc)) 50
6.5.7 Junction - Radiator Transient Thermal Impedance (Zth (jh)) 50
6.6 Mechanical characteristics and other data 50
6.7 Application Information 50
Basic Ratings and Characteristics of Gates Thyristors (GTO Thyristors)
7.1 Thermal conditions 50
7.1.1 Recommended temperature 50
7.1.2 Rated conditions 50
7.2 Voltage and current ratings (limit values) 50
7.2.1 Reverse Repetitive Peak Voltage (VRSM) 50
7.2.2 Reverse Repetitive Peak Voltage (VRRM) 51
7.2.3 Reverse DC voltage (VR (D)) (when applicable) 51
7.2.4 Do not repeat the peak voltage (VDSM) (if applicable)
7.2.5 Off-State Repetitive Peak Voltage (VDRM) 51
7.2.6 DC voltage (VD (D)) (when applicable) 51
7.2.7 Gate turn-off voltage (VRG) 51
7.2.8 On-state controllable non-repetitive peak current (ITQSM) 51
7.2.9 On-state controllable repetitive peak current (ITQRM) 51
7.2.10 Normal square root current (IT (RMS)) (when applicable) 51
7.2.11 Short-time and intermittent operating current 52
7.2.12 On-state inrush current (ITSM) 52
7.2.13 On-state current critical rate of increase (di/dt) 52
7.3 Other ratings (limit) 52
7.3.1 Gate Forward Peak Power (PFGM) 52
7.3.2 Equivalent junction temperature (Tj) 52
7.3.3 Storage temperature (Tstg) 52
7.3.4 Maximum permissible soldering temperature (Tsld) for GTO thyristors with solder terminals 52
7.3.5 Mounting torque (bolt-shaped device) (M) 53
7.3.6 Fastening force (flat plate type device) (F) 53
7.4 Electrical characteristics 53
7.4.1 On-state voltage (VT) 53
7.4.2 Threshold voltage (VT (TO)) 53
7.4.3 On-state slope resistance (rT) 53
7.4.4 Maintain current (IH) 53
7.4.5 Clean current (IL) 53
7.4.6 Critical rise rate of off-state voltage (dv/dt) 53
7.4.7 Gate Maintain Current (IFGsus) 53
7.4.8 Tail Peak Current (IZM) 53
7.4.9 Gate Trigger Current and Gate Trigger Voltage (IGT, VGT) 54
7.4.10 Gate does not trigger current and gate does not trigger voltage (IGD, VGD) 54
7.4.11 Gate off peak current (IRGQM) 54
7.4.12 Opening Loss Energy (EON) 54
7.4.13 On-state loss of energy (ET) 54
7.4.14 Shutdown Loss Energy (EQ) 55
7.4.15 Gate control opening delay time (tgd) 55
7.4.16 Interval of each time interval
7.5 Thermal Characteristics 55
7.5.1 Junction - Ambient Thermal Resistance (Rth (ja)) 55
7.5.2 Junction - shell thermal resistance (Rth (jc)) 55
7.5.3 Junction - Radiator Thermal Resistance (Rth (jh)) 55
7.5.4 Junction - Ambient Transient Thermal Impedance (Zth (ja)) 55
7.5.5 junction - shell transient thermal impedance (Zth (jc)) 56
7.5.6 Junction - Radiator Transient Thermal Impedance (Zth (jh)) 56
7.6 Mechanical characteristics and other data 56
8 type test and routine test requirements, thyristor mark 56
8.1 Type Test 56
8.2 Routine test 57
8.3 Measurement and test methods
Signals of thyristors
Measurement and test methods
Methods of measurement of electrical properties
9.1.1 General Precautions 57
9.1.2 On-state voltage (VT) 58
9.1.3 Reverse Peak Current (IRM) 59
Condensation current (IL) 60
9.1.5 Maintaining current (IH) 61
9.1.6 Off-state current (ID) 62
9.1.7 Gate Trigger Current and/or Gate Trigger Voltage (IGT, VGT) 63
9.1.8 Gate does not trigger voltage and/or gate does not trigger current (VGD, IGD) 64
9.1.9 Gate control delay time and turn-on time (td, tgt) 65
9.1.10 Circuit reversal time (tq) 67
9.1.11 Critical rise rate of off-state voltage (dv/dt) 72
9.1.12 Critical voltage rise rate dv/dt (c) 74
9.1.13 Recovery Charge and Reverse Recovery Time (Qr, trr) 79
9.1.14 Circuit reversal time (tq) of reverse conducting thyristor
9.1.15 Shutdown Characteristics of GTO Thyristors
9.1.16 Total loss of energy for one cycle (fast switching thyristor) 86
Methods of measurement of thermal characteristics
Measurement of Shell Temperature
9.2.2 Overview of Measurement Methods for Thermal Resistance (Rth) and Transient Thermal Impedance (Zth)
9.2.3 Method A 87
9.2.4 Method B 89
9.2.5 Method C (for GTO thyristors only) 96
9.2.6 Method D (heat flow method) 100
9.3 Test Method for Rating (Limit)
9.3.1 Reverse Repetitive Peak Voltage (VRSM) 102
9.3.2 Offset No Repetitive Peak Voltage (VDSM) 102
9.3.3 On-state inrush current (ITSM) 103
9.3.4 On-state current rating for fast switching thyristors 105
9.3.5 Critical rise rate of on-state current (di/dt) 113
9.3.6 The shell does not break the peak current 115
9.4 Durability test 116
9.4.1 Durability Test Table 116
9.4.2 Durability Test Conditions 116
9.4.3 Failure Criteria for Receiving Tests and Determination of Failure Characteristics
9.4.4 Reliability test to determine the characteristics of failure and failure criteria 116
9.4.5 Procedure for trial errors 116
9.4.6 Thermal cycling load test
Appendix A (informative) Calculation of load temperature over time
Fig.1 Static characteristics of unidirectional thyristor
Figure 2 static characteristics of bidirectional thyristor 3
Figure 3 Thyristor reverse peak voltage and off-state peak voltage 8
Figure 4 on-state peak current 12
Figure 5 The relationship between the gate forward voltage and the gate forward current
Figure 6 when the frequency is low, the GTO thyristor sub-loss power of 19
Figure 7 frequency higher, GTO thyristor dynamic on-state sub-loss energy 21
Figure 8 Characteristic approximation 21
Figure 9 Reverse Recovery Time 23
Figure 10 Dead state recovery time
Figure 11 Circuit reversal time 24
Figure 12 Gate control on time 24
Figure 13 Gate Control Shutdown Time 26
Figure 14 Recovery charge Qr 27
Figure 15, and the reverse of the rated voltage of the text symbols 29
Figure 16 on-state current of the ratings of the text symbols 30
Figure 17 Gate voltage applied to the thyristor
Figure 18 Rated maximum sine wave on-state peak current 35
Figure 19 Rated maximum trapezoidal wave on-state peak current 36
Figure 20 The relationship between the gate forward voltage and the gate forward current
Figure 21 Example of current and voltage waveforms during thyristor turn-off under various circuit conditions
Figure 22 Total loss of energy during a sinusoidal half-wave on-state current pulse
Figure 23 Total loss of energy during a trapezoidal wave current-state pulse
Figure 24 Recovery charge Qr, reverse recovery peak current IRM, reverse recovery time trr (ideal characteristic) 43
Figure 25 The relationship between the gate forward voltage and the gate forward current
Figure 26 on-state voltage test circuit (DC method) 58
Figure 27 uses a oscilloscope to measure the instantaneous on-state voltage of the test circuit 58
Figure 28 On-state voltage test circuit (pulse method) 59
Figure 29 Reverse Peak Current Test Circuit 60
Figure 30 Test circuit for keeping current
Figure 31 shows the current waveform
Figure 32 Test circuit for maintaining current
Figure 33 Test circuit for off-state current (DC method) 62
Figure 34 Test circuit for off-state peak current (oscilloscope method) 63
Figure 35 Gate Trigger Current and/or Gate Trigger Voltage Test Circuit 64
Figure 36 Gate does not trigger a voltage and/or gate that does not trigger a current test circuit 64
Figure 37 gate control delay time and turn-on time test circuit 65
Figure 38 test tgt thyristor on-state current waveform 66
Fig.3 Waveform of the off-state voltage and current when the thyristor is turned on
Figure 40 Waveform of current and voltage when thyristor is turned off
Figure 41 tests the basic circuit of tq
Figure 42 Practical circuit for testing tq 69
Figure 43 Test circuit for circuit commutation off time (another method)
Figure 44 Another method to test the voltage and current waveforms of tq
Figure 45 Test circuit for critical rise rate of off-state voltage
Figure 46 Voltage linearly rising waveform 73
Figure 47 Waveform of rising voltage index
Figure 48 Commutation Voltage Critical Rise Rate Test Circuit (Small Current Bidirectional Triode Thyristor) 75
Figure 49 Test the current and voltage waveform of dv/dt (c)
Figure 50 Commutation voltage critical rise rate test circuit (high current bidirectional triode thyristor) 77
Figure 51 has a high and low di/dt waveform 77
Figure 52 Test circuit (sine half-wave method) for recovering charge and reverse recovery time
Figure 53 Current waveform through the thyristor T (sinusoidal half-wave method)
Figure 54 Test circuit for recovering charge and reverse recovery time (rectangular wave method)
Figure 55 Current waveform through the thyristor T (rectangular wave method)
Figure 56 Test circuit 82 for circuit reversing time of the reverse conducting thyristor
Figure 57 Current and voltage waveforms of the reverse turn-on thyristor circuit commutation time
Figure 58 GTO thyristor turn-off characteristic test circuit 84
Figure 59 Voltage and current waveforms during GTO thyristor shutdown
Figure 60 Basic Test Circuit for Thermal Resistance Rth (Method A) 87
Figure 61 Basic test circuit for transient thermal impedance Zth (t) (Method A) 88
Figure 62 superimposes the reference current pulse 89 on a different on-state current
Figure 63 Wave of loss power and equivalent junction temperature (in general)
Figure 64 Calibration curve 92
Figure 65 Basic Test Circuit for Thermal Resistance Rth (Method B) 93
Figure 66 Measure the thermal resistance of the waveform (Method B)
Figure 67 Basic Test Circuit for Transient Thermal Impedance Zth (t) (Method B) 95
Figure 68 Waveform for measuring transient thermal impedance (Method B) 95
Figure 69 Basic Test Circuit for Thermal Resistance Rth (Method C) 97
Figure 70 shows the waveform of the thermal resistance (method C)
Fig. 71 Basic test circuit for transient thermal impedance Zth (t) (Method C)
Figure 72 measures the waveform of the transient thermal impedance of the GTO thyristor (Method C)
Figure 73 Calibration and measuring device (heat flow method)
Figure 74 Test circuit 102 for reverse non-repetitive peak voltage
Figure 75 Test circuit for the off-state non-repetitive peak voltage
Figure 76 on-state (non-repetitive) inrush current test circuit 104
Figure 77 has a reverse voltage of the sine wave on-state current of the basic test circuit and the test waveform 105
Figure 78 has a reverse voltage of the sine wave on-state current expansion test circuit 106
Figure 79 Basic test circuit and test waveform 107 for suppressing the sinusoidal wave current of the reverse voltage
Figure 80 An extended test circuit 108 for suppressing the sinusoidal wave current of the reverse voltage
Figure 81 has a reverse voltage of the trapezoidal wave on-state current of the basic test circuit and the test waveform 109
Figure 82 Basic test circuit and test waveform for suppressing the reverse voltage of the trapezoidal wave on-state current
Figure 83 Test circuit 113 for critical rise rate of on-state current
Figure 84 di/dt rated on-state current waveform 114
Figure 85 Test circuit 115 does not break the peak current
Figure 86 shows the thyristor through the reverse current iR waveform 115
Figure 87 Circuit and Waveform of Thermal Cycle Load Test
Figure A.1 Stepped approximation of non - rectangular pulses
Figure A.2 Generating a Power Dissipation P in a Semiconductor Device, Rectangular Pulse with a duration t1
Figure A.3 Relationship between transient thermal impedance Zth (t) versus time
Figure A.4 Three rectangular pulse single sequences 120
Figure A.5 Periodic sequence 121 of the same pulse
Figure A.6 Periodic sequence 122 of two different pulses per group
Table 1 Modifiers used in different types of thyristors
Table 2 Minimum test items for type tests and routine tests of reverse blocking triode thyristors
After the durability test, the characteristic of the failure is judged at the time of reception
Table 4 Durability test conditions
Table A.1 Calculation formula of equivalent junction temperature rise for several typical loads
Foreword
The expected structure of the National Standard for Semiconductor Device Discrete Devices is as follows.
- Part 1. General;
- Part 2. Rectifier diodes;
- Part 3. signals (including switches) and adjustment diodes;
- Part 4. Microwave devices;
- Part 4-1. Detail specification for microwave diodes and transistors for microwave field effect transistors;
- Part 5-1. General principles for optoelectronic devices;
- Part 5-2 Basic Ratings and Characteristics of Optoelectronic Devices;
- Part 5-3 part optoelectronic device test method;
- Part 5-4. Optoelectronic devices - Semiconductor lasers;
- Part 5-5 Optoelectronic devices Optocouplers;
- Part 6. Thyristors;
- Part 7. Bipolar transistors;
- Part 8. Field effect transistors;
- Part 9. Insulated gate bipolar transistors;
Part 10. General specification for discrete devices and integrated circuits;
Part 11. Subdivision of discrete devices;
- Part 14-1. General terms and classification of semiconductor sensors;
- Section 14-2 Semiconductor sensor Hall element;
- Section 14-3 Semiconductor Sensor Pressure Sensors;
- Section 14-4 Semiconductor Sensors - Semiconductor Accelerometers;
- Section 14-5 Semiconductor Sensor PN junction Semiconductor Temperature Sensor;
- Part 15. Insulated power semiconductor devices;
--- Part 16-1 Microwave integrated circuit amplifier;
- Part 16-2 Microwave integrated circuit frequency pre - counter;
--- Section 16-3 Microwave integrated circuit frequency converter;
--- Section 16-4 Microwave integrated circuit switch;
- Part 17. Basic insulation and reinforced insulation for magnetic and capacitive coupling.
This part is Part 6 of the National Standard for Semiconductor Devices Discrete Devices.
This part is drafted in accordance with the rules given in GB/T 1.1-2009.
This part replaces GB/T 15291-1994 "Semiconductor devices Part 6. Thyristors".
This section is the main change compared with GB/T 15291-1994 as follows.
--- content structure and the use of IEC standard version, with its degree of consistency. GB/T 15291-1994 equivalent use
IEC 60747-6. 1983 and.1991, Revision 1, in six and two appendices; this part is equivalent to
IEC 60747-6..2000, the content is divided into nine chapters and an appendix.
--- Terminology. increased from 108 to 170. The addition of 62 terms, including the type of thyristor type 7 (10 new, deleted
To 3), the other 55 terms are mainly GTO thyristor rating, characteristic terms.
--- text symbols. ratings and features of the text from 65 to 79 (mainly reverse conduction thyristor and GTO crystal
Gate), the general subscript is increased from 12 to 21.
--- Basic Ratings and Characteristics. Increased Reverse Transistor Triode Thyristor and GTO Thyristor, Deleted Bidirectional Triggered Diodes
The tube.
--- Test Method. Increases the total loss energy of a cycle (fast switching thyristor), the turn-off characteristics of the GTO thyristor, thermal resistance and
Transient thermal impedance method B, method C, method D and so on.
--- increased the "type test and routine test requirements, thyristor signs" chapter content.
- The nature of Appendix A is changed from "Supplement" (normative appendix) to "informative appendix".
--- Delete the thermal resistance formula and curve representation (supplements) ...
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