GB/T 24580-2009 English PDF

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GB/T 24580-2009: Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 24580-2009	229	Add to Cart	3 days	Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry	Valid

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Basic data

Standard ID: GB/T 24580-2009 (GB/T24580-2009)
Description (Translated English): Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H80
Classification of International Standard: 29.045
Word Count Estimation: 10,187
Date of Issue: 2009-10-30
Date of Implementation: 2010-06-01
Quoted Standard: ASTM E122
Adopted Standard: SEMI MF1528-1104, MOD
Regulation (derived from): National Standard Approval Announcement 2009 No.12 (Total No.152)
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the method of secondary ion mass spectrometry heavily doped n-type silicon substrate boron contamination. This standard applies to secondary ion mass spectrometry (SIMS) for heavily doped n-type single crystal silicon substrate material shed trace contamination (total) test. This standard applies to antimony, arsenic, doped with phosphorus concentration <0. 2% (1 �� 10^20atoms/cm^3) the concentration of boron in silicon material testing. Especially for the shed for unintentionally doped p-type impurity, and the concentration of trace levels (<5 �� 10^14 atoms/cm^3) testing the silicon material. This standard applies to detect contamination concentrations greater than shed SIMS instrument detection limits (based on different models of the instrument detection limit of about 5 �� 10^12 atoms/cm^3 ~ 5 �� 10^13 atoms/cm^3) twice silicon material. In principle, the standard samples for different surface conditions are suitable, but this standard is to estimate the accuracy of the test data obtained from the polished surface of the sample.

GB/T 24580-2009: Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry

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Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry ICS 29.045 H80 National Standards of People's Republic of China Like type heavily doped silicon substrate boron contamination Secondary ion mass spectrometry detection method Posted 2009-10-30 2010-06-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This revised standard adopts SEMIMF1528-1104 "Secondary Ion Mass Spectrometry heavily doped N-type silicon substrate boron contamination of the law". The standard format for SEMIMF1528-1104 been adjusted accordingly. For ease of comparison, the data are listed in Appendix B The standard clauses and clauses SEMIMF1528-1104 control list. And SEMIMF1528-1104 modify the terms of the vertical Logo singlet they involved provisions margin. This standard compared with SEMIMF1528-1104, the main technical differences are as follows. --- Removed the "purpose", "keyword"; --- The precision of the actual test results obtained in the laboratory instead of single precision and bias part of the original standard, and the original standard The precision and bias data as part of Appendix A. The Standard Appendix A and Appendix B is an informative annex. This standard by the National Standardization Technical Committee of semiconductor equipment and materials proposed. This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material. This standard was drafted. Ministry of Information Industry materials for Quality Supervision and Inspection Center, China Electronics Technology Group Corporation forty-sixth RESEARCH The study. The main drafters of this standard. Manong farming, He Youqin, ARCHIVES. Like type heavily doped silicon substrate boron contamination Secondary ion mass spectrometry detection method

1 Scope

1.1 standard specifies the method of secondary ion mass spectrometry test heavily doped n-type silicon substrate boron contamination. This standard applies to secondary ion mass spectrometry Method (SIMS) of heavily doped n-type single crystal silicon substrate material of trace boron contamination (total) testing. 1.2 This standard applies to antimony, arsenic, phosphorus doping concentration < 0.2% (1 × 1020atoms/cm3) silicon material boron concentration detection. Particularly suitable boron unintentionally doped p-type impurity, and the concentration of trace levels (< 5 × 1014atoms/cm3) of silicon material test. 1.3 This standard applies to detect contamination of boron concentration greater than SIMS instrument detection limit (depending on the model of the instrument is different, the detection limit is about 5 × 1012atoms/cm3 ~ 5 × 1013atoms/cm3) twice a silicon material. 1.4 In principle, this standard samples for different surface conditions are suitable, but this standard is the precision of estimates from sample surface finish The test data obtained.

2 Normative references

The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard. ASTME122 evaluation batch process or a quality of the sample size selection specification

3 Terms and Definitions

The following terms and definitions apply to this standard. 3.1 Depending on the mass to charge ratio ions to be separated and counted. 3.2 Ions generated by the ion gun, the focusing surface of the sample, and the ionized sputtered atoms in the surface of the sample. 3.3 Sputtered surface of the sample secondary ion mass spectrometry. 3.4 In the primary ion beam sputtering of the sample surface from atoms and ions ionize the sample surface.

4 Summary of Test Method

Secondary ion mass spectrometry for the heavily doped n-type single crystal silicon substrate material of boron contamination tests. 4.1 The single-crystal silicon sample (a low boron concentration of the sample as a blank test sample instrument, such as a high resistance n-type float zone silicon wafer; a boron doping Silicon as a standard sample and test sample) into the sample holder. ......

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