GB/T 24576-2009 English PDFUS$209.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 24576-2009: Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction Status: Valid
Basic dataStandard ID: GB/T 24576-2009 (GB/T24576-2009)Description (Translated English): Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H80 Classification of International Standard: 29.045 Word Count Estimation: 9,963 Date of Issue: 2009-10-30 Date of Implementation: 2010-06-01 Adopted Standard: SMEI M63-0306, IDT Regulation (derived from): National Standard Approval Announcement 2009 No.12 (Total No.152) Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China Summary: This standard specifies test methods AIGaAs, Al content in the epitaxial layer by high resolution X -ray diffraction measurements on a GaAs substrate. This method is applicable to the determination of the direction of growth of the Al content in AlGaAs epitaxial layer in the <001> GaAs substrate is undoped. When using this method to measure the Al content, AIGaAs epitaxial layer thickness should be greater than 300 nm. GB/T 24576-2009: Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction ICS 29.045 H80 National Standards of People's Republic of China High-resolution X-ray diffraction measurement G Rao A Ju substrate Posted 2009-10-30 2010-06-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released ForewordThis standard is identical with the technical content SMEIM63-0306 "guidelines. using high-resolution X-ray diffraction measurements on GaAs substrate Test Methods "AlGaAs of Al percentage of. This standard SMEIM63-0306 made editorial changes. Appendix A of this standard is an informative annex. This standard by the National Standardization Technical Committee of semiconductor equipment and materials proposed. This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material. This standard was drafted. Ministry of Information Industry materials for Quality Supervision and Inspection Center, China Electronics Technology Group Corporation forty-sixth RESEARCH The study. The main drafters. Zhang Ann Hui, Huang Qingtao, He Xiukun. High-resolution X-ray diffraction measurement G Rao A Ju substrate1 ScopeThis standard specifies the test methods AlGaAs epitaxial layer Al content in high resolution X-ray diffraction measurements on the GaAs substrate. This method is applicable to the determination of the direction of the GaAs substrate grown AlGaAs epitaxial layer Al content of < 001> in undoped, use When this method of measuring the Al element content, AlGaAs epitaxial layer thickness should be greater than 300nm. 2 terms, definitions and symbols 2.1 Terms and Definitions The following terms and definitions apply to this standard. 2.1.1 X-ray crystallographic plane from a set of diffraction angle is defined as the Bragg's law. angle. 2.1.2 When scanning through a diffraction peak curve and ω diffraction intensity of this diffraction peak perhaps only a few measurements in HRXRD Arcsec width. 2.1.3 It contains the incident and diffracted light plane. 2.1.4 A ternary alloy described B1- x0 x0 x0 C lattice parameters vary linearly with the law, in order to change the range of AB or AC primitive, x0 is 0≤ x0 ≤1. 2.2 Symbols and abbreviations 2.2.1 FWHM Peak width at half peak height. 2.2.2 HRXRD High-resolution X-ray diffraction. 2.2.3 2θ Probe the incident light angle. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 24576-2009_English be delivered?Answer: Upon your order, we will start to translate GB/T 24576-2009_English as soon as possible, and keep you informed of the progress. 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