GB/T 24574-2009 English PDF

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GB/T 24574-2009: Test methods for photoluminescence analysis of single crystal silicon for III-V impurities
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 24574-2009	279	Add to Cart	3 days	Test methods for photoluminescence analysis of single crystal silicon for III-V impurities	Valid

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Basic data

Standard ID: GB/T 24574-2009 (GB/T24574-2009)
Description (Translated English): Test methods for photoluminescence analysis of single crystal silicon for III-V impurities
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H80
Classification of International Standard: 29.045
Word Count Estimation: 12,168
Date of Issue: 2009-10-30
Date of Implementation: 2010-06-01
Quoted Standard: GB/T 13389; GB/T 24581
Adopted Standard: SEMI MF1389-0704, MOD
Regulation (derived from): National Standard Approval Announcement 2009 No.12 (Total No.152)
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the silicon single product in ��-�� photoluminescence testing methods ethnic impurities. This standard applies to the determination of low dislocation single crystal silicon impurity conductivity of boron and phosphorus content simultaneously. This standard is used to detect a single product silicon content of 1 �� 10^(11) at �� cm^(-3) ~ 5 �� 10^(15) at �� cm^(-3) for a variety of electrically active impurity elements.

GB/T 24574-2009: Test methods for photoluminescence analysis of single crystal silicon for III-V impurities

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Test methods for photoluminescence analysis of single crystal silicon for III-V impurities ICS 29.045 H80 National Standards of People's Republic of China Silicon Crystal Ⅲ-Ⅴ family impurities Photoluminescence testing methods Posted 2009-10-30 2010-06-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This revised standard adopts SEMIMF1389-0704 "Test Method No. Ⅲ-Ⅴ impurities in electroluminescent light analysis of single crystal silicon." The standard format for SEMIMF1389-0704 been adjusted accordingly. For ease of comparison, the data are listed in Appendix B of this standard Reg and reg SEMIMF1389-0704 control list. And SEMIMF1389-0704 modify the terms of the standard single line vertical Knowledge involved in their terms of margin. This standard compared with SEMIMF1389-0704, the main technical differences are as follows. Content --- Remove the "purpose", "terms and definitions" in the Discussion section, "bias" and "keywords" and other sections; --- Removed SEMIMF1389-0704 in arsenic Determination of aluminum content; --- The precision of the actual test results obtained in the laboratory instead of the original single standard of precision and bias SEMIMF1389-0704 Poor section, and precision and bias as part of the original standard informative Appendix A. Appendix A of this standard and Appendix B is an informative annex. This standard by the National Standardization Technical Committee of semiconductor equipment and materials proposed. This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material. This standard was drafted. Ministry of Information Industry materials for Quality Supervision and Inspection Center, China Electronics Technology Group Corporation forty-sixth RESEARCH The study. The main drafters of this standard. Li Jing, He Xiukun, Lin Xian. Silicon Crystal Ⅲ-Ⅴ family impurities Photoluminescence testing methods

1 Scope

This standard specifies the test methods photoluminescent silicon single crystal Ⅲ-Ⅴ family impurities. This standard applies to the determination of low dislocation single crystal silicon conductive impurity of boron and phosphorus content at the same time. The standard for the detection of single crystal silicon in an amount of 1 × 1011at · cm-3 ~ 5 × various electrically active impurity elements 1015at · cm-3's.

2 Normative references

The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard. GB/T 13389 boron-doped silicon single crystal doped with phosphorus concentration in terms of procedures resistivity and dopant Measurement Silicon Crystal Ⅲ GB/T 24581 cryogenic Fourier transform infrared spectroscopy, the standard method Ⅴ family impurities

3 Terms and Definitions

The following terms and definitions to adapt to this standard. 3.1 Those characterized by the generation of defects in silicon absorption. 3.2 Condensed by the optical excitation of exciton gas phase (liquid). 3.3 Is a space lattice (free excitons) or point impurity atoms (bound exciton) can combine the light-emitting electron-hole pairs. 3.4 Generated by the lattice point impurity atoms (bound exciton) captured exciton photoluminescence. At a temperature of 4.2K extrinsic exciton binding energy, its energy is much lower than the intrinsic emission. X is an impurity element symbol, BE indicates Bound exciton fluorescence spectroscopy. Also included extrinsic fluorescence characteristic absorption, because a plurality of bound excitons (b1, b2, b3 respectively represent the first A plurality of second and third exciton complexes bound). The donor fluorescence spectra, these complexes appeared in two series of spectral lines in the TO area, Series is called α and β Series. Behind the symbol plus an apostrophe to indicate β series of weak absorption features. (Ie PTO (b1 ')) (see Table 1 and Table 2). 3.5 Pure undoped silicon excitons generated by recombination photoluminescence. 3.6 Lattice vibration energy of the quantum harmonic oscillator. ......

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