GB/T 24577-2009 English PDF

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GB/T 24577-2009: Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 24577-2009	349	Add to Cart	3 days	Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography	Valid

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Basic data

Standard ID: GB/T 24577-2009 (GB/T24577-2009)
Description (Translated English): Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H80
Classification of International Standard: 29.045
Word Count Estimation: 15,193
Date of Issue: 2009-10-30
Date of Implementation: 2010-06-01
Quoted Standard: ASTM D6196
Adopted Standard: SEMI MF1982-1103, MOD
Regulation (derived from): National Standard Approval Announcement 2009 No.12 (Total No.152)
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the qualitative and quantitative methods of organic pollutants in the wafer surface. Using GC-MS or phosphorus selective detector or both adopted. This standard applies to polished silicon wafers and silicon oxide layer.

GB/T 24577-2009: Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography ICS 29.045 H80 National Standards of People's Republic of China Thermal Desorption Gas Chromatography Organic Pollutants in the wafer surface Posted 2009-10-30 2010-06-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This revised standard adopts SEMIMF1982-1103 "Method for Thermal desorption gas chromatography to assess the silicon surface organic pollutants." The standard format for SEMIMF1982-1103 been adjusted accordingly. For ease of comparison, the data are listed in Appendix B of this standard Reg and reg SEMIMF1982-1103 control list. And SEMIMF1982-1103 modify the terms of the standard single line vertical Knowledge involved in their terms of margin. This standard compared with SEMIMF1389-0704, the main technical differences are as follows. --- Removed the "purpose", "keyword"; --- The precision of the actual test results obtained in the laboratory instead of single precision and bias part of the original standard, and the original standard The precision and bias data as part of Appendix A. The Standard Appendix A, Appendix B is an informative annex. This standard by the National Standardization Technical Committee of semiconductor equipment and materials proposed. This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material. This standard was drafted. Ministry of Information Industry materials for Quality Supervision and Inspection Center, China Electronics Technology Group Corporation forty-sixth RESEARCH The study. The main drafters of this standard. Wang Yi, Chulian Qing, Li Jing. Thermal Desorption Gas Chromatography Organic Pollutants in the wafer surface

1 Scope

1.1 standard provides qualitative and quantitative methods of organic pollutants in the wafer surface, using GC-MS or phosphorus selective detector or two Who while using. 1.2 This standard describes the thermal desorption gas chromatography (TD-GC) and the related procedures for sample preparation and analysis. 1.3 The detection limit of the range depends on the detection of organic compounds such as hydrocarbons (C8 ~ C28) detection range is 10-12g/cm2 ~ 10-9g/cm2. 1.4 This standard applies to the polished silicon oxide layer and the silicon wafer. 1.5 standard contains two methods. A method suitable for wafer after cutting, Method B is applicable to the entire wafer. Two ways Different point method is described in detail in Section 7.

2 Normative references

The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard. ASTMD6196 sorbent selection and sampling/thermal desorption analysis program to detect volatile organic compounds in the air 3 Terms, definitions and abbreviations The following terms and definitions and abbreviations apply to this standard. 3.1 Terms and Definitions 3.1.1 A heat-treated but not absorb any silicon organic pollutants. 3.2 Acronyms AED --- atomicemissiondetector atomic emission detector C16 --- n-hexadecane, n-C16H34 n-hexadecane FID --- flameionizationdetector flame ionization detector FPD --- flamephotometricdetector flame photometric detector GC --- gaschromatography GC MS --- massspectrometer Mass NPD --- nitrogen/phosphorusthermionicionizationdetector NPD TBP --- tributyphosphate, (C4H9O) 3PO tributyl phosphate TCEP --- tris (2-chloroethyl) phosphate, (ClCH2CH2O) 3PO tris (2-chloroethyl) phosphate TD --- thermaldesorption thermal desorption ......

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