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GB/T 17170-2015 English PDF

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US$129.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email.
GB/T 17170-2015: Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy
Status: Valid

GB/T 17170: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 17170-2015	129	Add to Cart	3 days	Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy	Valid
GB/T 17170-1997	199	Add to Cart	3 days	Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method	Obsolete

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GB/T 14849.1 GB/T 38976 GB/T 14849.3 GB/T 14140 GB/T 24582

Basic data

Standard ID: GB/T 17170-2015 (GB/T17170-2015)
Description (Translated English): Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H17
Classification of International Standard: 77.040
Word Count Estimation: 6,658
Date of Issue: 2015-12-10
Date of Implementation: 2016-07-01
Older Standard (superseded by this standard): GB/T 17170-1997
Quoted Standard: GB/T 14264
Regulation (derived from): National Standard Announcement 2015 No.38
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the semi-insulating GaAs single crystal deep donor EL2 concentration infrared absorption test methods. Determination of semi-insulating GaAs single crystal deep donor EL2 concentration This standard applies to more than 10 �� cm resistivity undoped and doped with carbon. This standard does not apply to the determination of chromium-doped semi-insulating GaAs single crystal deep donor EL2 concentration.

GB/T 17170-2015: Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy ICS 77.040 H17 National Standards of People's Republic of China Replacing GB/T 17170-1997 Semi-insulating GaAs single crystal deep donor EL2 The concentration of infrared absorption test methods Issued on. 2015-12-10 2016-07-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. This standard replaces GB/T 17170-1997 "non-doped semi-insulating GaAs single crystal deep level EL2 concentration infrared absorption test methods." This standard compared with GB/T 17170-1997, mainly in the following changes. --- Modify the standard name; --- Added "Normative references" "Terms and Definitions", "disturbances" and "test environment" and chapter; --- Semi-insulating GaAs single crystal extended resistivity range, the resistivity greater than 107Ω · cm amended as greater than 106Ω · cm; --- Will range from "non-doped semi-insulating GaAs single crystal" to "carbon doped and non-doped semi-insulating GaAs single crystal"; --- Remove the cleavage sample preparation 0.4mm ~ 2mm thickness of the test sample. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and National Semiconductor Equipment and Materials Standards Materials Branch of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed. This standard was drafted. the information industry materials for Quality Supervision and Inspection Center, Tianjin Central European Semiconductor Materials Technology Co., China Electronic Materials Industry Association. The main drafters of this standard. He Xiukun, Li Jing, Zhang Xue-nan. This standard replaces the standards previously issued as follows. --- GB/T 17170-1997. Semi-insulating GaAs single crystal deep donor EL2 The concentration of infrared absorption test methods

1 Scope

This standard specifies the semi-insulating GaAs single crystal deep donor EL2 concentration infrared absorption test methods. This standard applies to electrical resistivity greater than 106Ω · cm undoped and carbon doped semi-insulating GaAs single crystal deep donor EL2 concentration Determination. This standard does not apply to the determination of chromium-doped semi-insulating GaAs single crystal deep donor EL2 concentration.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 14264 semiconductor material terms

3 Terms and Definitions

GB/T 14264 and defined by the following terms and definitions apply to this document. 3.1 EL2 concentration EL2concentration EL2 (a GaAs single crystal intrinsic defects) concentration in the single crystal of gallium arsenide.

4 Method summary

Semi-insulating GaAs single crystal deep donor EL2 infrared absorption coefficient α EL2 concentration and a corresponding relationship, measuring 1.0972μm Infrared absorption coefficient by the empirical calibration formula can be calculated at the EL2 concentration. Infrared absorption coefficient α EL2 concentration and see the relationship between Appendix A.

5 disturbances

5.1 stray light reaching the detector will result in deviation of the test results EL2 concentration. Testing area of 52,000 test sample should be larger than the diaphragm aperture, or it may lead to erroneous test results.

6 Instruments

6.1 Spectrophotometer. 0.8μm ~ 2.5μm can scan range and the absorbance of the zero line fluctuations should not exceed -0.002 to 0.002. 6.2 micrometer. accuracy of 10μm. ......

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Tips & Frequently Asked Questions:

Question 1: How long will the true-PDF of GB/T 17170-2015_English be delivered?

Answer: Upon your order, we will start to translate GB/T 17170-2015_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time.

Question 2: Can I share the purchased PDF of GB/T 17170-2015_English with my colleagues?

Answer: Yes. The purchased PDF of GB/T 17170-2015_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.

Question 3: Does the price include tax/VAT?

Answer: Yes. Our tax invoice, downloaded/delivered in 9 seconds, includes all tax/VAT and complies with 100+ countries' tax regulations (tax exempted in 100+ countries) -- See Avoidance of Double Taxation Agreements (DTAs): List of DTAs signed between Singapore and 100+ countries

Question 4: Do you accept my currency other than USD?

Answer: Yes. If you need your currency to be printed on the invoice, please write an email to Sales@ChineseStandard.net. In 2 working-hours, we will create a special link for you to pay in any currencies. Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.

Question 5: Should I purchase the latest version GB/T 17170-2015?

Answer: Yes. Unless special scenarios such as technical constraints or academic study, you should always prioritize to purchase the latest version GB/T 17170-2015 even if the enforcement date is in future. Complying with the latest version means that, by default, it also complies with all the earlier versions, technically.