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SJ/T 1480-2016 English PDF

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SJ/T 1480-2016: (Discrete semiconductor devices 3CG130 high frequency low power silicon PNP transistor detailed specification)
Status: Valid

SJ/T 1480: Evolution and historical versions

Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
SJ/T 1480-2016English259 Add to Cart 3 days [Need to translate] (Discrete semiconductor devices 3CG130 high frequency low power silicon PNP transistor detailed specification) Valid SJ/T 1480-2016
SJ 1480-1979English279 Add to Cart 3 days [Need to translate] Detail specification for silicon PNP epitaxial planar high frequency low power transistors, Type 3CG130 Obsolete SJ 1480-1979

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Basic data

Standard ID SJ/T 1480-2016 (SJ/T1480-2016)
Description (Translated English) (Discrete semiconductor devices 3CG130 high frequency low power silicon PNP transistor detailed specification)
Sector / Industry Electronics Industry Standard (Recommended)
Classification of Chinese Standard L42
Word Count Estimation 11,156
Date of Issue 2016-04-05
Date of Implementation 2016-09-01
Older Standard (superseded by this standard) SJ 1480-1979
Regulation (derived from) The Ministry of Industry and Notice No. 2016 in 2016; industry standard record announcement 2016 No. 7 (total 199)
Issuing agency(ies) Ministry of Industry and Information Technology
Summary This standard specifies the external dimensions, maximum ratings and electrical characteristics, test conditions and inspection requirements for 3CG130 silicon PNP high frequency low power transistor devices.

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