|
US$519.00 · In stock
Delivery: <= 5 days. True-PDF full-copy in English will be manually translated and delivered via email.
GB/T 44935-2024: Nanotechnologies - Measurement of the number of layers of MoS2 flakes - Raman spectroscopy method
Status: Valid
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 44935-2024 | English | 519 |
Add to Cart
|
5 days [Need to translate]
|
Nanotechnologies - Measurement of the number of layers of MoS2 flakes - Raman spectroscopy method
| Valid |
GB/T 44935-2024
|
PDF similar to GB/T 44935-2024
Basic data | Standard ID | GB/T 44935-2024 (GB/T44935-2024) | | Description (Translated English) | Nanotechnologies - Measurement of the number of layers of MoS2 flakes - Raman spectroscopy method | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | N35 | | Classification of International Standard | 17.180.30 | | Word Count Estimation | 26,296 | | Date of Issue | 2024-12-31 | | Date of Implementation | 2025-07-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 44935-2024: Nanotechnologies - Measurement of the number of layers of MoS2 flakes - Raman spectroscopy method
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 17.180.30
CCSN35
National Standard of the People's Republic of China
Nanotechnology. Layer number measurement of MoS2 thin sheets
Raman spectroscopy
Released on 2024-12-31
2025-07-01 Implementation
State Administration for Market Regulation
The National Standardization Administration issued
Table of Contents
Preface III
Introduction IV
1 Scope 1
2 Normative references 1
3 Terms and Definitions 1
4 Principle 4
5 Instruments 7
6 Sample Preparation 8
7 Measurement steps 8
8 Layer Determination 9
9 Test Report 11
Appendix A (Informative) Schematic diagram of spectral parameters of typical Raman peaks 12
Appendix B (Informative) Transfer Operation Steps 13
Appendix C (Informative) Raman spectroscopy (Method A) for measuring the number of MoS2 flakes based on the peak positions of shear mode and interlayer breathing mode
Characterization Example 14
Appendix D (Informative) Characterization of the number of MoS2 flakes by Raman spectroscopy (Method B) based on the peak position difference between the E12g mode and the A1g mode
Example 16
Appendix E (Informative) Raman spectroscopy (C method) for measuring the number of MoS2 flakes based on the silicon Raman mode peak height of an oxidized silicon wafer substrate
Characterization Example 18
Appendix F (Informative) Test Report Example 20
Reference 21
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents"
Drafting.
Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents.
This document was proposed by the Chinese Academy of Sciences.
This document is under the jurisdiction of the National Nanotechnology Standardization Technical Committee (SAC/TC279).
This document was drafted by. Institute of Semiconductors, Chinese Academy of Sciences, Hebei University, Taizhou Juna New Energy Co., Ltd., Southeast University, Xiamen
Kaina Graphene Technology Co., Ltd., Horiba (China) Trading Co., Ltd., Institute of Physics, Chinese Academy of Sciences, Tianjin University, National Nanotechnology Co., Ltd.
Science Center.
The main drafters of this document are. Tan Pingheng, Liu Xuelu, Lin Miaoling, Li Xiaoli, Ding Rong, Zhang Qi, Ni Zhenhua, Huang Weiming, Shen Jing, Yang Yang, He Qing,
Gao Jie and Shao Yue.
Introduction
As one of the representatives of two-dimensional layered materials, molybdenum disulfide (hereinafter referred to as "MoS2" unless otherwise specified) flakes have excellent electrical
The performance of nano-photonics, optics, mechanics, and thermals has become the key to the continuation of Moore's Law in the new generation of high-performance nano-photonic devices and the post-silicon semiconductor era.
The number of MoS2 flakes has a significant impact on its optical and electrical properties. For example, a single layer of MoS2 is directly
The multilayer MoS2 has a significant luminous efficiency and has good application prospects in optoelectronic fields such as photodetectors and photodiodes.
The indirect band gap of MoS2 decreases with the increase of the number of layers. Compared with single-layer MoS2, the carrier mobility and current density of multilayer MoS2 decrease with the increase of the number of layers.
The higher the number of layers, the more significant the application advantages in electronic devices such as field effect transistors. Therefore, it is very important to quickly characterize the number of layers of MoS2 flakes.
It has important guiding significance for its production and preparation and the development of related products, and is also the basis for in-depth research on the physical and chemical properties of MoS2 flakes.
The foundation and core of its application development.
As a fast, non-destructive and highly sensitive spectral characterization method, Raman spectroscopy has been widely used to measure the number of layers in MoS2 flakes.
For example, in the Raman spectra of single-layer and multi-layer MoS2 flakes, the peak position difference between the high-frequency Raman vibration modes, the E12g mode and the A1g mode, increases with the
The peaks of low-frequency Raman vibration modes, i.e., interlayer breathing mode and shear mode, in MoS2 flakes with two or more layers increase with the number of MoS2 layers[3].
The position of MoS2 has a definite corresponding relationship with the number of layers of MoS2 flakes [4]. In addition, when MoS2 flakes are prepared on an oxidized silicon substrate (i.e., the surface is oxidized),
When the substrate is a single crystal silicon substrate with a silicon dioxide film formed thereon (hereinafter referred to as "oxidized silicon wafer substrate"), the oxide film below
The silicon Raman mode peak height of the silicon wafer substrate also shows a monotonic relationship with the number of MoS2 flakes [5].
By using the number of features, the number of layers in the MoS2 flakes can be measured.
Since MoS2 flakes prepared by different methods have great differences in crystallinity and microstructure, the existing characterization methods are not effective.
In practical applications, one or more methods should be selected based on the crystallinity and microstructural characteristics of MoS2 flakes.
Suitable characterization methods are used to conduct a comprehensive analysis of the number of layers.
The preparation of this document will provide scientific basis for the measurement of the number of MoS2 flakes prepared by mechanical exfoliation using Raman spectroscopy.
reliable basis and standard test methods, and promote the application of Raman spectroscopy in the field of nanotechnology and two-dimensional materials industry.
Provide technical guidance for the production and research of two-dimensional materials such as MoS2 flakes.
Nanotechnology. Layer number measurement of MoS2 thin sheets
Raman spectroscopy
Warning. This document involves the use of lasers, which may cause irreversible damage to the eyes. Wear
The corresponding laser protective glasses are strictly prohibited to look directly at the laser to prevent the laser from being reflected by optical components and entering the human eye.
Safety training.
1 Scope
This paper describes a method for measuring the number of MoS2 flakes using Raman spectroscopy.
This document is applicable to the layer number measurement of intrinsic MoS2 flakes with 2H stacking and in-plane size greater than or equal to 2μm.
2 Normative references
The contents of the following documents constitute the essential clauses of this document through normative references in this document.
For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies to
This document.
GB/T 30544.13-2018 Nanotechnology Terminology Part 13.Graphene and related two-dimensional materials
GB/T 31225 Ellipsometer method for measuring the thickness of silicon dioxide thin layers on silicon surfaces
GB/T 33252 Nanotechnology laser confocal micro-Raman spectrometer performance test
GB/T 40069-2021 Nanotechnology - Raman spectroscopy for measuring the number of layers of graphene-related two-dimensional materials
3 Terms and definitions
The following terms and definitions as defined in GB/T 33252, GB/T 30544.13-2018 and GB/T 40069-2021 apply to this
document.
3.1 Terms related to molybdenum disulfide
3.1.1
two-dimensional material; 2D material
It is composed of one or more layers, in which the atoms in each layer are tightly bonded to the adjacent atoms in the layer, and have one dimension (i.e., its
A material whose dimensions (thickness) are on the nanometer or smaller scale and whose other two dimensions are usually on larger scales.
[Source. GB/T 30544.13-2018, 3.1.1.1]
3.1.2
A two-dimensional material composed of a layer of molybdenum (Mo) atoms and two layers of sulfur (S) atoms stacked together.
Note 1.In each layer of MoS2, the S and Mo atomic layers are arranged in a planar hexagonal array, with 6 S atoms distributed around each Mo atom.
Each S atom is surrounded by three Mo atoms, which are bonded by strong covalent bonds. The thickness of each MoS2 layer is about
0.65nm.
Note 2.According to the relative orientation of the upper and lower S atomic layers, 1L-MoS2 can be divided into two types according to the coordination mode. 2H type with triangular prism coordination and 1T type with octahedral coordination.
As shown in Figure 1.
Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 44935-2024_English be delivered?Answer: Upon your order, we will start to translate GB/T 44935-2024_English as soon as possible, and keep you informed of the progress. The lead time is typically 3 ~ 5 working days. The lengthier the document the longer the lead time. Question 2: Can I share the purchased PDF of GB/T 44935-2024_English with my colleagues?Answer: Yes. The purchased PDF of GB/T 44935-2024_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet. Question 3: Does the price include tax/VAT?Answer: Yes. Our tax invoice, downloaded/delivered in 9 seconds, includes all tax/VAT and complies with 100+ countries' tax regulations (tax exempted in 100+ countries) -- See Avoidance of Double Taxation Agreements (DTAs): List of DTAs signed between Singapore and 100+ countriesQuestion 4: Do you accept my currency other than USD?Answer: Yes. If you need your currency to be printed on the invoice, please write an email to [email protected]. In 2 working-hours, we will create a special link for you to pay in any currencies. Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.
|