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YS/T 936-2013: Sputtering nickel vanadium alloy target used in integrated circuit device
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| YS/T 936-2013 | English | 419 |
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Sputtering nickel vanadium alloy target used in integrated circuit device
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YS/T 936-2013
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Basic data | Standard ID | YS/T 936-2013 (YS/T936-2013) | | Description (Translated English) | Sputtering nickel vanadium alloy target used in integrated circuit device | | Sector / Industry | Nonferrous Metallurgy Industry Standard (Recommended) | | Classification of Chinese Standard | H62 | | Classification of International Standard | 77.150.40 | | Word Count Estimation | 16,146 | | Quoted Standard | GB/T 1031; GB/T 6394; GB/T 14265; GJB 1580A; YS/T 837 | | Regulation (derived from) | Ministry of Industry and Information Technology Bulletin No. 52, 2013; industry standard for filing Notice No. 1 of 2014 (No. 169 overall) | | Issuing agency(ies) | Ministry of Industry and Information Technology | | Summary | This standard specifies: integrated circuit device with a nickel vanadium alloy sputtering targets requirements, test methods, inspection rules and signs, packaging, transportation, storage, quality certificate and the contract or purchase order content. | YS/T 936-2013: Sputtering nickel vanadium alloy target used in integrated circuit device---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Sputtering nickel vanadium alloy target used in integrated circuit device
ICS 77.150.40
H62
People's Republic of China Nonferrous Metals Industry Standard
Integrated circuit device with a nickel vanadium alloy target
Issued on. 2013-10-17
2014-03-01 implementation
Ministry of Industry and Information Technology of the People's Republic of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
This standard by the National Standardization Technical Committee Nonferrous Metals (SAC/TC243) centralized.
This standard is drafted by. There RESEARCH billion of the new Materials Co., Ltd..
Participated in the drafting of this standard. Beijing Nonferrous Metal Research Institute, Ningbo Jiang Feng Electronic Materials Co., Ltd., China Nonferrous Metal Workers
Industry Standards and Metrology Institute for Quality.
The main drafters of this standard. Dong Ting Yi, He Jinjiang, Liu Hongbin, Zhang Tao, Yao Lijun, Wang Xueze to Lei, Xu Xueli, Zhu Xiaoguang, according to Ding Chong,
Lu Chao, Lei Jifeng, Xiong, Zhangdian Kai, Li Na.
Integrated circuit device with a nickel vanadium alloy target
1 Scope
This standard specifies the integrated circuit device with a nickel-vanadium alloy sputtering targets requirements, test methods, inspection rules and signs, packaging, transportation,
Storage, quality certificate and a contract or purchase order content.
This standard applies to all types of nickel-vanadium alloy sputtering targets used in the manufacture of electronic film.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 1031 Geometrical product specifications (GPS) Surface texture Profile method Surface roughness parameters and their values
GB/T 6394 Determination of average grain size of metal
GB/T 14265 metallic materials hydrogen, oxygen, nitrogen, carbon and sulfur analysis General
GJB1580A deformation of the metal ultrasonic inspection method
YS/T 837 sputtering targets - back binding quality ultrasonic inspection
3 Terms and Definitions
The following terms and definitions apply to this document.
3.1
Target target
Sputter deposition techniques cathode portion. The cathode material in the form of positively charged cations Struck molecules, atoms or ions
From the surface of the anode and cathode deposition.
3.2
Target blanks targetblank
The cathode material used as the target portion.
3.3
Backplane backingplate
For supporting a fixed target or blank section. Target and back by welding (such as brazing, electron beam welding, diffusion bonding, etc.), complex machinery,
Bonding or the like are connected.
4 Requirements
4.1 Categories
4.1.1 according to the structure is divided into two monomers and composite, as shown in FIG.
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