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GB/T 4377-2018 English PDF

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GB/T 4377-2018: Semiconductor integrated circuits -- Measuring method of voltage regulators
Status: Valid

GB/T 4377: Evolution and historical versions

Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
GB/T 4377-2018English519 Add to Cart 5 days [Need to translate] Semiconductor integrated circuits -- Measuring method of voltage regulators Valid GB/T 4377-2018
GB/T 4377-1996English679 Add to Cart 4 days [Need to translate] Semiconductor integrated circuits. General principles of measuring methods of voltage regulator Obsolete GB/T 4377-1996
GB 4377-1984English479 Add to Cart 4 days [Need to translate] General principles of measuring methods of voltage regulator for semiconductor integrated circuits Obsolete GB 4377-1984

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Basic data

Standard ID GB/T 4377-2018 (GB/T4377-2018)
Description (Translated English) Semiconductor integrated circuits -- Measuring method of voltage regulators
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard L56
Classification of International Standard 31.200
Word Count Estimation 26,295
Date of Issue 2018-03-15
Date of Implementation 2018-08-01
Issuing agency(ies) State Administration for Market Regulation, China National Standardization Administration

GB/T 4377-2018: Semiconductor integrated circuits -- Measuring method of voltage regulators

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Semiconductor integrated circuits--Measuring method of voltage regulators ICS 31.200 L56 National Standards of People's Republic of China Replacing GB/T 4377-1996 Semiconductor integrated circuit Voltage regulator test method Published by.2018-03-15 2018-08-01 Implementation General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China China National Standardization Administration released Directory Preface I 1 Scope 1 2 Terms and Definitions 1 3 General 3 3.1 Test Environment Requirements 3 3.2 Test Considerations 3 3.3 Test Instruments and Equipment 3 4 Parameter Test 3 4.1 Voltage Regulation (SV) 3 4.2 Current Regulation (SI) 5 4.3 Power Supply Ripple Spur Ratio 6 4.4 Output Voltage Temperature Coefficient (ST) 7 4.5 Long-Term Stability of Output Voltage (St) 8 4.6 Output Noise Voltage (VNO) 9 4.7 Dissipation Current (ID) and Dissipation Current Variation (ΔID) 10 4.8 Short Circuit Current (IOS) 11 4.9 Output Impedance (ZO) 12 4.10 Reference Voltage (VREF) 13 4.11 Startup Time (tS) 14 4.12 Minimum input and output voltage difference (VDROP) 15 4.13 Input Voltage Change Transient Response Time (t1) and Input Voltage Change Transient Overshoot Voltage [VOM(VI)] 16 4.14 Load current change transient response time (t2) and load current change transient overshoot voltage [VOM(IO)] 17 4.15 Output Current Limit (ILimit) 18 4.16 Thermal Shutdown Temperature (TSHDN) and Hysteresis Temperature (ΔTSHDN) 19 4.17 Output Voltage (VO) and Output Voltage Deviation (ΔVO) 20 4.18 Thermal Regulation (Sh) 21

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard replaces GB/T 4377-1996 "Basic Principles for Test Methods for Voltage Regulators of Semiconductor Integrated Circuits" and GB/T 4377- Compared with.1996, the main technical changes are as follows. --- Modify the power supply ripple rejection ratio Srip, output noise voltage VNO, dissipation current ID and dissipation current change ΔID, thermal regulation Sh4 parameter test method; --- Deleted the phrase "does not apply to double-ended (input) port devices" in the original standard; --- Deleted the "starting voltage range VOR" in the original standard, and replaced it with "starting time tS"; --- Increased start-up time tS, output current limit ILimit, thermal shutdown temperature TSHDN and hysteresis temperature ΔTSHDN, and output voltage VO And output voltage deviation ΔVO4 item parameter test method. Please note that some of the contents of this document may involve patents. The issuing agency of this document does not assume responsibility for identifying these patents. This standard was proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This standard is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78). This standard was drafted by. Shengbang Microelectronics (Beijing) Co., Ltd. and the ninth institute of the China Aerospace Science and Technology Corporation No. 718 Research Institute. Institute, Chengdu Zhenxin Technology Co., Ltd., Beijing Yuxiang Electronics Co., Ltd. The main drafters of this standard. Wang Hongru, Yuan Yingying, Zou Chen, Zhu Hua, Zhang Baohua, Zhang Bing, Chen Zhipei, Luo Bin. Semiconductor integrated circuit Voltage regulator test method

1 Scope

This standard specifies the voltage regulator (hereinafter referred to as the device) parameter test method. This standard applies to the testing of voltage regulator parameters in the field of semiconductor integrated circuits.

2 Terms and Definitions

The following terms and definitions apply to this document. 2.1 Voltage regulation The rate of change of the output voltage with changes in the input voltage, usually by changing the DC input voltage and measuring the corresponding output voltage change To determine the voltage regulation rate. 2.2 Current regulation current regulation The rate of change of output voltage with changes in output current, usually by changing the DC output current and measuring the corresponding DC output The pressure changes to determine the current regulation rate. 2.3 Power supply ripple rejection ratio powersupplyrejectionratio The ratio of the input power variation to the output voltage variation. 2.4 Output voltage temperature coefficient outputvoltagetemperaturecoefficient The rate of change of the output voltage with changes in ambient temperature, usually by changing the ambient temperature and recording the corresponding output voltage change Determine the temperature coefficient of the output voltage. 2.5 Output voltage long-term stability outputvoltagestability The rate of change of the output voltage over time is determined by testing the change in output voltage value over time. 2.6 Output noise voltage outputvoltagenoise The noise generated by the device itself at the output voltage, usually measured at the device's internal circuit versus output voltage, at a specified DC input voltage Interference. 2.7 Dissipative Current and Dissipation Current Changes dissipativecurrentanddissipationcurrentchanges The ground current value when the input voltage and output current are the specified values determine the change of the dissipated current when the input and output conditions change. The measured dissipated current when the output current is “0” is also referred to as a quiescent current (Iq). 2.8 Short-circuit current The output current at the output of the device is short-circuited, and the short-circuit current is usually measured at the specified input voltage.

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