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GB/T 30654-2014: Test method for lattice constant of Ⅲ-nitride epitaxial layers
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Test method for lattice constant of Ⅲ-nitride epitaxial layers
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GB/T 30654-2014
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Basic data | Standard ID | GB/T 30654-2014 (GB/T30654-2014) | | Description (Translated English) | Test method for lattice constant of ��-nitride epitaxial layers | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H21 | | Classification of International Standard | 77.040.20 | | Word Count Estimation | 10,189 | | Date of Issue | 12/31/2014 | | Date of Implementation | 9/1/2015 | | Regulation (derived from) | National Standards Bulletin 2014 No. 33 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This Standard specifies the use of high-resolution X-ray diffraction test �� nitride epitaxial wafer lattice constant method. This Standard applies to the oxide substrate (Al2��3, Zn��, etc.) or a semiconductor substrate (GaN, Si, GaAs, SiC, etc.) epitaxiall | GB/T 30654-2014: Test method for lattice constant of Ⅲ-nitride epitaxial layers---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for lattice constant of Ⅲ-nitride epitaxial layers
ICS 77.040.20
H21
National Standards of People's Republic of China
Ⅲ nitride lattice constant of the epitaxial wafer test method
Issued on. 2014-12-31
2015-09-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
Please note that some of the content of this document may involve patents. Distribution of this document
Institutions do not assume the responsibility to identify these patents.
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and National Semiconductor Equipment and Materials Standards
Materials Branch of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed.
This standard was drafted. Institute of Semiconductors.
The main drafters of this standard. Sun Baojuan, Xia Zhao, Wang Junxi, Zeng Yiping, Li Jin Min.
Ⅲ nitride lattice constant of the epitaxial wafer test method
1 Scope
This standard specifies the use of high-resolution X-ray diffraction test Ⅲ nitride epitaxial wafer lattice constant method.
This standard applies to the oxide substrate (Al2O3, ZnO, etc.) or epitaxial growth on the (GaN, Si, GaAs, SiC, etc.) of a semiconductor substrate
Nitride (Ga, In, Al) N monolayer or multilayer heteroepitaxial sheet lattice constant measurements. Other hetero epitaxial wafers measuring the lattice constant can be
The reference standard.
2 Symbol
The following symbols apply to this document.
FWHM. full width at half peak height of the diffraction of the diffraction peak half the full width.
ω. the angle between the incident light and the surface of the sample.
2θ. the angle between the detector and the incident light.
χ axis. the tilt axis of the sample, and the sample surface intersected by the diffraction plane is made.
χ angle. the sample surface and the diffraction plane intersecting angle.
ω-2θ scan or 2θ-ω scan. linkage scan detector at twice the speed of scanning the sample.
θB. X-ray generator and the angle of incident light between the reflective surfaces when diffraction.
3 PRINCIPLE OF THE METHOD
3.1 General
Ⅲ nitride semiconductor crystalline epitaxial wafer relatively good integrity, the use of high resolution lattice constant X-ray diffraction measurement sample
Not only easy, but also has high accuracy, no damage and no pollution. Methods of measurement of the lattice constant of the epitaxial wafer has two categories. the relative measurement
The amount and method of absolute measurement method.
3.2 relative measurement method
According to the epitaxial substrate, the peak position of the peak relative to the lattice constant of the epitaxial film is determined. In this measurement method, the form that the substrate does not occur
Change, in a fully relaxed state, and then use the double-crystal diffraction or 3-axis crystal diffraction ω-2θ scanning, whereby an epitaxial film diffraction peak and lining
Peak spacing bottom peak Δω. If the extension of the peak on the left side of the substrate peak, the epitaxial film is compressive strain state, Δω is negative; if the epitaxial substrate peak peak
The right side of the epitaxial film in the tensile strain state, Δω is positive. According to Bragg equation 2dsinθB = nλ, to give the corresponding distance between the planes, namely
Formula (1).
de =
sinθs
sin (θs Δω)
ds ... (1)
Where.
de --- spacing epitaxial film crystal face;
ds --- spacing of the substrate crystal face;
θs --- Bragg angle of the substrate crystal planes.
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