| Std ID | Description (Standard Title) | 
				
            
                | SJ 1761-1981 | BCD-type C-cores for single-phase transformers | 
        
				
            
                | SJ 176-1977 | (Germanium detector diode detector test methods efficiency) | 
        
				
            
                | SJ 1767-1981 | Metallic bell cover for vacuum equipment--Nominal diameter | 
        
				
            
                | SJ 1768-1981 | Metallic bell cover for vacuum equipment--Body case | 
        
				
            
                | SJ 1769-1981 | Metallic bell cover for vacuum equipment--Sealing head | 
        
				
            
                | SJ 1770-1981 | Metallic bell cover for vacuum equipment--Flange | 
        
				
            
                | SJ 1771-1981 | Metallic bell cover for vacuum equipment--Sealing collar | 
        
				
            
                | SJ 177-1977 | (Test Method germanium detector diode frequency characteristics) | 
        
				
            
                | SJ 1772-1981 | (Vacuum measurement gauge fittings) | 
        
				
            
                | SJ 1773-1981 | (Can bake vacuum measurement gauge fittings) | 
        
				
            
                | SJ 1774-1981 | Observation window for vacuum equipment | 
        
				
            
                | SJ 1775-1981 | Cermet-sealed electrodes | 
        
				
            
                | SJ 1776-1981 | (CK-100 ~ 600 ultra-high vacuum diffusion pump oil metal structure type and parameters Series) | 
        
				
            
                | SJ 1777-1981 | (CK-100 ~ 600 ultra-high vacuum metal oil diffusion pump. Technical conditions) | 
        
				
            
                | SJ 1778-1981 | (Test methods CK-100 ~ 600 ultra-high vacuum metal oil diffusion pump.) | 
        
				
            
                | SJ 1779-1981 | Ordinary two-electrode sputtering ion pump--Parameters series | 
        
				
            
                | SJ 1780-1981 | Ordinary two-electrode sputtering ion pump--Performance specification | 
        
				
            
                | SJ 1781-1981 | Sputtering ion pump--Testing methods | 
        
				
            
                | SJ 178-1977 | (Germanium detector test methods and switching diode capacitance) | 
        
				
            
                | SJ 1782-1981 | (Chinese Industry Standard) | 
        
				
            
                | SJ 1783-1981 | Specification for electrical vacuum ceramic parts | 
        
				
            
                | SJ 1784-1981 | Detail specification for silicon single phase bridge rectifiers, Type QL1-9 and QL21-28 | 
        
				
            
                | SJ 1785-1981 | General procedures of measurement for silicon single phase bridge rectifiers, up to 5A | 
        
				
            
                | SJ 1786-1981 | Method of measurement for forward voltage of silicon single phase bridge rectifiers, up to 5A | 
        
				
            
                | SJ 1787-1981 | Method of measurement for rated peak working reverse voltage and reverse current of silicon single phase bridge rectifiers, up to 5A | 
        
				
            
                | SJ 1788-1981 | Method of measurement for operational junction temperature of silicon single phase bridge rectifiers, up to 5A | 
        
				
            
                | SJ 1789-1981 | Method of measurement for maximum operational frequency of silicon single phase bridge rectifiers, up to 5A | 
        
				
            
                | SJ 1790-1981 | Method of measurement for overload current multiplication factor of silicon single phase bridge rectifiers, up to 5A | 
        
				
            
                | SJ 1791-1981 | Method of measurement for insulation robustness of silicon single phase bridge rectifiers, up to 5A | 
        
				
            
                | SJ 179-1977 | (0: 00 germanium detector and switching diode junction capacitance of the test method) | 
        
				
            
                | SJ 1794-1981 | General specification for diffusion furnace for semiconductor device manufacturing | 
        
				
            
                | SJ 1795-1981 | Detail specification for 50-1000mA low current thyristors | 
        
				
            
                | SJ 180-1977 | (Test Method germanium detector diode surge current) | 
        
				
            
                | SJ 1802-1981 | Electronic tubes, Type FU-113Z (F) | 
        
				
            
                | SJ 1804-1981 | Detail specification for silicon tuning variable capacitance diodes, Type 2CC101~104, 2CC201~204, 2CC301~304, 2CC401~404 | 
        
				
            
                | SJ 1805-1981 | Detail specification for silicon frequency modulated variable capacitance diodes, Type 2CC126 | 
        
				
            
                | SJ 1806-1981 | Detail specification for silicon band switching varialbe capacitance diodes, Type 2CC110, 2CC210, 2CC310, 2CC410, 2CC130 | 
        
				
            
                | SJ 1807-1981 | Detail specification for silicon tuning variable capacitance diodes, for Type 2CC120, 2CC122 and 2CC124; 2CC220, 2CC222 and 2CC224; 2CC320, 2CC322, 2CC324; 2CC420, 2CC422 and 2CC424 | 
        
				
            
                | SJ 1819-1981 | Preferred series--Module, number of teeth, face width and diameter of datum apperture for fine-pitch gears | 
        
				
            
                | SJ 1820-1981 | Preferred fine-pitch spur gears | 
        
				
            
                | SJ 1821-1981 | Preferred thin plated fine-pitch spur gears | 
        
				
            
                | SJ 1822-1981 | Preferred fine-pitch straight bevel gears | 
        
				
            
                | SJ 1823-1981 | Preferred double thin plate fine-pitch spur gears (Provisional) | 
        
				
            
                | SJ 1824-1981 | Preferred structure and size for fine-pitch cylindrical worm wheel and worm | 
        
				
            
                | SJ 1825-1981 | Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK21 | 
        
				
            
                | SJ 1826-1981 | Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK100 | 
        
				
            
                | SJ 1827-1981 | Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK6 | 
        
				
            
                | SJ 1828-1981 | Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK53 | 
        
				
            
                | SJ 1829-1981 | Detail specification silicon NPN epitaxial planar low power switching transistors, Type 3DK5 | 
        
				
            
                | SJ 1830-1981 | Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK101 | 
        
				
            
                | SJ 1831-1981 | Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK28 | 
        
				
            
                | SJ 1832-1981 | Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK102 | 
        
				
            
                | SJ 1833-1981 | Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK103 | 
        
				
            
                | SJ 1834-1981 | Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK104 | 
        
				
            
                | SJ 1835-1981 | (3DK105 type NPN silicon epitaxial planar low power switching transistor) | 
        
				
            
                | SJ 1836-1981 | (3DK106 type NPN silicon epitaxial planar low power switching transistor) | 
        
				
            
                | SJ 1837-1981 | (3DK107 type NPN silicon epitaxial planar low power switching transistor) | 
        
				
            
                | SJ 1838-1981 | Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK29 | 
        
				
            
                | SJ 1839-1981 | Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK108 | 
        
				
            
                | SJ 1840-1981 | Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK14 | 
        
				
            
                | SJ 1841-1981 | Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK100 | 
        
				
            
                | SJ 1842-1981 | Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK110 | 
        
				
            
                | SJ 1843-1981 | Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK111 | 
        
				
            
                | SJ 1844-1981 | Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK112 | 
        
				
            
                | SJ 1845-1981 | Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK113 | 
        
				
            
                | SJ 1846-1981 | Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK120 | 
        
				
            
                | SJ 1847-1981 | Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK121 | 
        
				
            
                | SJ 1848-1981 | Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK130 | 
        
				
            
                | SJ 1851-1981 | (Crystal oscillator test methods) | 
        
				
            
                | SJ 1852-1981 | Terms for quartz crystal controlled oscillators | 
        
				
            
                | SJ 1856-1981 | (Electronic ceramic materials alumina impurity atom absorption spectrophotometry) | 
        
				
            
                | SJ 1860-1981 | Measurement of AM-PM conversion coefficient of power klystrons | 
        
				
            
                | SJ 1861-1981 | Fluorescent character indicator tubes, Type YS9-3 | 
        
				
            
                | SJ 1862-1981 | Fluorescent character indicator tubes, Type YS13-3 | 
        
				
            
                | SJ 1863-1981 | (YS18-3 digital fluorescent indicator tube) | 
        
				
            
                | SJ 1864-1981 | (KND1 type Rocker Switch) | 
        
				
            
                | SJ 1865-1981 | (KND2 type Rocker Switch) | 
        
				
            
                | SJ 1866-1981 | Terminating posts, Type TZ | 
        
				
            
                | SJ 1867-1981 | Socket of LC type and WC type for inspecition purpose | 
        
				
            
                | SJ 1869-1981 | Continuous wave power amplification klystrons, Type KF-115 | 
        
				
            
                | SJ 1871-1981 | Measurement conditions for gas laser devices | 
        
				
            
                | SJ 1872-1981 | Methods of measurement for firing voltage of gas laser devices | 
        
				
            
                | SJ 1873-1981 | Methods of measurement for optimum working current of gas laser devices | 
        
				
            
                | SJ 1874-1981 | Methods of measurement for tube voltage drop of gas laser devices | 
        
				
            
                | SJ 1875-1981 | Methods of measurement for output power of gas laser devices | 
        
				
            
                | SJ 1876-1981 | Methods of measurement for stability of output power for gas laser devices | 
        
				
            
                | SJ 1877-1981 | Methods of measurement for excursion of beam direction of gas laser devices | 
        
				
            
                | SJ 1878-1981 | Methods of discrimination for transverse mode of gas laser devices | 
        
				
            
                | SJ 1879-1981 | Methods of measurement for angle of beam divergence of gas laser devices | 
        
				
            
                | SJ 1880-1981 | Methods of measurement for frequency drift of gas laser devices | 
        
				
            
                | SJ 1881-1981 | Methods of measurement for polarization of gas laser devices | 
        
				
            
                | SJ 1882-1981 | General specification for variable air dielectric capacitors for use in radio receivers | 
        
				
            
                | SJ 1885-1981 | Generic specification for compound dielectric capacitors | 
        
				
            
                | SJ 1886-1981 | Marking content and method of thermistors | 
        
				
            
                | SJ 1887-1981 | Major technical parameters for thermistors | 
        
				
            
                | SJ 1893-1981 | General specification for sockets for electronic tubes and valves and crystal units | 
        
				
            
                | SJ 1894-1981 | (GZC4-1 type ceramic tube socket legs) | 
        
				
            
                | SJ 1895-1981 | (GZC4-1B-K-type legs ceramic header) | 
        
				
            
                | SJ 1896-1981 | (GZC4-3A-K, GZS4-3A-K-type legs Headers) | 
        
				
            
                | SJ 1897-1981 | (GZC4-3B-K-type legs ceramic header) |