SJ/T 1833-2016 English PDF

US$259.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email.
SJ/T 1833-2016: (Semiconductor discrete device 3DK103 silicon NPN low power switching transistor detailed specification)
Status: Valid

SJ/T 1833: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
SJ/T 1833-2016	259	Add to Cart	3 days	(Semiconductor discrete device 3DK103 silicon NPN low power switching transistor detailed specification)	Valid
SJ 1833-1981	159	Add to Cart	2 days	Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK103	Obsolete

Similar standards

SJ/T 11281   SJ/T 11141   GB/T 18910.2   SJ/T 1830   SJ/T 1831   SJ/T 1826   

Basic data

Standard ID: SJ/T 1833-2016 (SJ/T1833-2016)
Description (Translated English): (Semiconductor discrete device 3DK103 silicon NPN low power switching transistor detailed specification)
Sector / Industry: Electronics Industry Standard (Recommended)
Classification of Chinese Standard: L42
Word Count Estimation: 11,155
Date of Issue: 2016-04-05
Date of Implementation: 2016-09-01
Older Standard (superseded by this standard): SJ 1833-1981
Regulation (derived from): The Ministry of Industry and Notice No. 2016 in 2016; industry standard record announcement 2016 No. 7 (total 199)
Issuing agency(ies): Ministry of Industry and Information Technology
Summary: This standard specifies the external dimensions, maximum ratings and electrical characteristics, test conditions and inspection requirements of the 3DK103 type NPN device.

Image