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Industry Standard: SJ, SJ/T, SJT
              
SJ << ...>> SJ
Std ID Description (Standard Title)
SJ 3225-1989 Fundamental performance requirements and classification for remote control system for use in colour television broadcast receivers
SJ 3226-1989 Test methods for ceramics-motal sealing strength against teusion
SJ 3227-1989 Test methods for properties parameters of thermal tubes for use in electronic equipment
SJ 3228.10-1989 Determination of Lead in high purity arenaceous quartz
SJ 3228.1-1989 Specification for high purty arenaceous quartz for use in electronic industry
SJ 3228.2-1989 General rules for methods of analysis for high purity arenaceous quartz
SJ 3228.3-1989 Determination of loss on ignition in high purity arenaceous quartz
SJ 3228.4-1989 Determination of silicon oxide in high purity arenaceous quartz
SJ 3228.5-1989 Determination of Iron in high purity arenaceous quartz
SJ 3228.6-1989 Determination of Copper in high purity arenaceous quartz
SJ 3228.7-1989 Determination of Chromium in high purity arenaceous quartz
SJ 3228.8-1989 Determination of Alumiuium in high purity arenacous quartz
SJ 3228.9-1989 Determination of Chlorine in high purity arenaceous quartz
SJ 3230-1989 Test methods for natural cooling temperature in electronic equipment
SJ 3231-1989 (Low penetration welding glass powder)
SJ 323-1972 (Nickel-plated iron belt)
SJ 3232.1-1989 (Low melting solder glass powder softening temperature of the test method)
SJ 3232.2-1989 (Test Method for Low penetration welding residual stresses in the glass frit bonding)
SJ 3232.3-1989 (Low melting solder glass powder flowability test methods)
SJ 3232.4-1989 (Low melting solder glass powder crystallization time measurement method)
SJ 3233-1989 Supports and glass bar of electron gun for vacuum electronic devices
SJ 3234-1989 Test method for dynamic relating to vacuum gas emission properties of electronic material
SJ 3235-1989 Ribbon getter made of Zirconium and Aluminium
SJ 3236-1989 Method for determination of trace oxygen in electronic grade gases--Phosphor scintillating method
SJ 3237-1989 Method for determination of trace oxygen in electronic grade Argon--Argon ionization gas chromatography method
SJ 3238-1989 Method for determination of trace Nitrogen in electronic grade Argon--Argon ionization gas chromatography method
SJ 3239-1989 General requirement for gas chromatography analysis method
SJ 3240-1989 Method for determination of trace Methane and hydrogen in electronic grade Argon--Argon ionization gas chromatography method
SJ 3241-1989 Gallium arsenide single-crystal bar and wafer
SJ 324-1972 Molybdenum plates
SJ 3242-1989 Gallium arsenide epitaxy wafers
SJ 3243-1989 Indium phosphide single-crystal bar and wafers
SJ 3244.1-1989 Methods of measurement for hall mobility and carrier concentration of Gallium arsenide and Indium phosphide
SJ 3244.2-1989 Methods of measurement for crystal lattice mismatch between substrate of Gallium arsenide and Indium phosphide and extended layer of heterojunction
SJ 3244.3-1989 Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide
SJ 3244.4-1989 Methods of measurement for profile distribution of carrier concentration of Gallium arsenide and Indium phosphide materials--Electrochemical voltage capacitance method
SJ 3244.5-1989 Methods of measurement for compensation degree of Gallium arsenide and Indium phosphide materias
SJ 3245-1989 Methods for measuring dislocation of Indium phosphide single-crystal
SJ 3246-1989 Methods for measuring Aluminium component in Aluminium-Gallium-Arsenic by phosphors method
SJ 3247-1989 Methods of measurement for extended-layer thickness of same-type Gallium arsenide by infra-red interference
SJ 3248-1989 Methods for measuring carrier concentration of readded Gallium arsenide and Indium phosphide by infra-red reflection
SJ 3249.1-1989 Methods of measurement for resistivity of semi-insulation Gallium arsenide and Indium phosphide single crystal material
SJ 3249.2-1989 Methods of measurement for Carbon concentration of semi-insulation Gallicem arsenide single crystal by infra-red absorption
SJ 3249.3-1989 Methods of measurement for chromium concentration in semi-insulation Gallium arsenide by infra-red absorption
SJ 3249.4-1989 (Semi-insulating gallium arsenide infrared absorption in EL2 concentration test methods)
SJ 3250-1989 Grades of power and energy for gas laser devices
SJ 3251-1989 General specification for antiairoraft gun radar antenna
SJ 3252-1989 General specification for tape transmission system of popularized small recorders
SJ 3253-1989 General requirements of inspection procedures for preparation of measuring equipment in electronic industry
SJ 3254-1989 Methods for screen of samples of medium-low power transistors for measurements
SJ 3258-1989 General specification for popularized small recorders
SJ 3259-1989 General specification for resonator with tuning fork and tablet
SJ 3260-1989 Methods of measurement for electric properties of resonator with tuning fork and tablet
SJ 3261-1989 Temperature fuses, Type RWH1
SJ 3262-1989 General specification for packaging materials for use in electronic components
SJ 3263-1989 (Broadcast receivers and associated equipment conducted immunity characteristic limit value)
SJ 3264-1989 General specification for electronic organ
SJ 3265-1989 Methods of measurement for acoustic performance of electronic organ
SJ 3266-1989 System for radio calling system
SJ 3267-1989 Ribbons of Nickel-coated Iron for use in vacuum tubes
SJ 3268-1989 Double side Aluminium-plated Iron strips and Nickel-Iron-Aluminium alloy strips
SJ 3269-1989 Copper-plated Iron wire and Nickel-plated Iron wire for vacuum divices
SJ 3272-1990 Safety requirements for resistors
SJ 3274-1990 Safety requirements for single-phase A. C. power supply switches
SJ 3275-1990 Safety requirements for one-sided printed circuits boards made of paper
SJ 3277-1990 Cartridge fuse-links for miniature fuses
SJ 332-1973 Generic specification for receiving tubes, high reliability, subminiature and finger-shaped
SJ 338-1973 General specification for high-voltage rectifier tubes
SJ 343-1973 Generic specification for gas-filled microwave switching tubes
SJ 344-1973 General specification for low noise travelling wave tubes
SJ 345-1973 General specification for power travelling wave tubes
SJ 346-1973 General specification for O-Type backward wave tubes
SJ 347-1973 Generic specification for reflex klystrons
SJ 362-1973 Measurement conditions for reflex klystrons
SJ 363-1973 Measurement of reflector total current, reflector ion current and reflector leakage current of reflex klystrons
SJ 364-1973 Measurement of cathode current of reflex klystrons
SJ 365-1973 Measurement of cathode current variation ratio of reflex klystrons as heater current changes
SJ 366-1973 Measurement of interelectrode leakage current of reflex klystrons
SJ 367-1973 Measurement of output power of reflex klystrons
SJ 368-1973 Measurement of power ripple ratio of reflex klystrons
SJ 369-1973 Measurement of oscillation frequency of reflex klystrons
SJ 370-1973 Measurement of electronic tuning range of reflex klystrons
SJ 371-1973 Measurement of anti-overloading performance of reflex klystronss
SJ 37-1977 (Production equipment for the electronics industry type designation)
SJ 372-1973 Measurement of electronic tuning slope of reflex klystrons
SJ 373-1973 Measurement of frequency pulling of reflex klystrons
SJ 374-1973 Measurement of load characteristic of reflex klystrons
SJ 375-1973 Measurement of of pulse modulation characteristic of reflex klystrons
SJ 376-1973 Measuremnt of electronic tuning hysteresis of reflex klystrons
SJ 377-1973 Measurement of frequency drift coefficient of reflex klystrons
SJ 378-1973 Measurement of oscillation stability time of reflex klystron
SJ 379-1973 Measurement of frequency drift of reflex klystrons
SJ 380-1973 Measurement of frequency stability of reflex klystrons
SJ 381-1973 Measurement of frequency temperature coefficient of reflex klystrons
SJ 382-1973 Measurement of frequency resettability of reflex klystrons
SJ 419-1973 Measurement conditions for low noise travelling wave tubes
SJ 420-1973 Methods of measurement for voltages and currents on per-electrode of low noise travelling wave tubes
SJ 421-1973 Methods of measurement for leakage current between last anode and each electrode of low noise travelling wave tubes
SJ 42-1964 (Chinese Industry Standard)
SJ 42-1977 Classification properties, field of applications and marking of metallic coaings and chemically treated layers