Std ID |
Description (Standard Title) |
SJ 3225-1989
|
Fundamental performance requirements and classification for remote control system for use in colour television broadcast receivers
|
SJ 3226-1989
|
Test methods for ceramics-motal sealing strength against teusion
|
SJ 3227-1989
|
Test methods for properties parameters of thermal tubes for use in electronic equipment
|
SJ 3228.10-1989
|
Determination of Lead in high purity arenaceous quartz
|
SJ 3228.1-1989
|
Specification for high purty arenaceous quartz for use in electronic industry
|
SJ 3228.2-1989
|
General rules for methods of analysis for high purity arenaceous quartz
|
SJ 3228.3-1989
|
Determination of loss on ignition in high purity arenaceous quartz
|
SJ 3228.4-1989
|
Determination of silicon oxide in high purity arenaceous quartz
|
SJ 3228.5-1989
|
Determination of Iron in high purity arenaceous quartz
|
SJ 3228.6-1989
|
Determination of Copper in high purity arenaceous quartz
|
SJ 3228.7-1989
|
Determination of Chromium in high purity arenaceous quartz
|
SJ 3228.8-1989
|
Determination of Alumiuium in high purity arenacous quartz
|
SJ 3228.9-1989
|
Determination of Chlorine in high purity arenaceous quartz
|
SJ 3230-1989
|
Test methods for natural cooling temperature in electronic equipment
|
SJ 3231-1989
|
(Low penetration welding glass powder)
|
SJ 323-1972
|
(Nickel-plated iron belt)
|
SJ 3232.1-1989
|
(Low melting solder glass powder softening temperature of the test method)
|
SJ 3232.2-1989
|
(Test Method for Low penetration welding residual stresses in the glass frit bonding)
|
SJ 3232.3-1989
|
(Low melting solder glass powder flowability test methods)
|
SJ 3232.4-1989
|
(Low melting solder glass powder crystallization time measurement method)
|
SJ 3233-1989
|
Supports and glass bar of electron gun for vacuum electronic devices
|
SJ 3234-1989
|
Test method for dynamic relating to vacuum gas emission properties of electronic material
|
SJ 3235-1989
|
Ribbon getter made of Zirconium and Aluminium
|
SJ 3236-1989
|
Method for determination of trace oxygen in electronic grade gases--Phosphor scintillating method
|
SJ 3237-1989
|
Method for determination of trace oxygen in electronic grade Argon--Argon ionization gas chromatography method
|
SJ 3238-1989
|
Method for determination of trace Nitrogen in electronic grade Argon--Argon ionization gas chromatography method
|
SJ 3239-1989
|
General requirement for gas chromatography analysis method
|
SJ 3240-1989
|
Method for determination of trace Methane and hydrogen in electronic grade Argon--Argon ionization gas chromatography method
|
SJ 3241-1989
|
Gallium arsenide single-crystal bar and wafer
|
SJ 324-1972
|
Molybdenum plates
|
SJ 3242-1989
|
Gallium arsenide epitaxy wafers
|
SJ 3243-1989
|
Indium phosphide single-crystal bar and wafers
|
SJ 3244.1-1989
|
Methods of measurement for hall mobility and carrier concentration of Gallium arsenide and Indium phosphide
|
SJ 3244.2-1989
|
Methods of measurement for crystal lattice mismatch between substrate of Gallium arsenide and Indium phosphide and extended layer of heterojunction
|
SJ 3244.3-1989
|
Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide
|
SJ 3244.4-1989
|
Methods of measurement for profile distribution of carrier concentration of Gallium arsenide and Indium phosphide materials--Electrochemical voltage capacitance method
|
SJ 3244.5-1989
|
Methods of measurement for compensation degree of Gallium arsenide and Indium phosphide materias
|
SJ 3245-1989
|
Methods for measuring dislocation of Indium phosphide single-crystal
|
SJ 3246-1989
|
Methods for measuring Aluminium component in Aluminium-Gallium-Arsenic by phosphors method
|
SJ 3247-1989
|
Methods of measurement for extended-layer thickness of same-type Gallium arsenide by infra-red interference
|
SJ 3248-1989
|
Methods for measuring carrier concentration of readded Gallium arsenide and Indium phosphide by infra-red reflection
|
SJ 3249.1-1989
|
Methods of measurement for resistivity of semi-insulation Gallium arsenide and Indium phosphide single crystal material
|
SJ 3249.2-1989
|
Methods of measurement for Carbon concentration of semi-insulation Gallicem arsenide single crystal by infra-red absorption
|
SJ 3249.3-1989
|
Methods of measurement for chromium concentration in semi-insulation Gallium arsenide by infra-red absorption
|
SJ 3249.4-1989
|
(Semi-insulating gallium arsenide infrared absorption in EL2 concentration test methods)
|
SJ 3250-1989
|
Grades of power and energy for gas laser devices
|
SJ 3251-1989
|
General specification for antiairoraft gun radar antenna
|
SJ 3252-1989
|
General specification for tape transmission system of popularized small recorders
|
SJ 3253-1989
|
General requirements of inspection procedures for preparation of measuring equipment in electronic industry
|
SJ 3254-1989
|
Methods for screen of samples of medium-low power transistors for measurements
|
SJ 3258-1989
|
General specification for popularized small recorders
|
SJ 3259-1989
|
General specification for resonator with tuning fork and tablet
|
SJ 3260-1989
|
Methods of measurement for electric properties of resonator with tuning fork and tablet
|
SJ 3261-1989
|
Temperature fuses, Type RWH1
|
SJ 3262-1989
|
General specification for packaging materials for use in electronic components
|
SJ 3263-1989
|
(Broadcast receivers and associated equipment conducted immunity characteristic limit value)
|
SJ 3264-1989
|
General specification for electronic organ
|
SJ 3265-1989
|
Methods of measurement for acoustic performance of electronic organ
|
SJ 3266-1989
|
System for radio calling system
|
SJ 3267-1989
|
Ribbons of Nickel-coated Iron for use in vacuum tubes
|
SJ 3268-1989
|
Double side Aluminium-plated Iron strips and Nickel-Iron-Aluminium alloy strips
|
SJ 3269-1989
|
Copper-plated Iron wire and Nickel-plated Iron wire for vacuum divices
|
SJ 3272-1990
|
Safety requirements for resistors
|
SJ 3274-1990
|
Safety requirements for single-phase A. C. power supply switches
|
SJ 3275-1990
|
Safety requirements for one-sided printed circuits boards made of paper
|
SJ 3277-1990
|
Cartridge fuse-links for miniature fuses
|
SJ 332-1973
|
Generic specification for receiving tubes, high reliability, subminiature and finger-shaped
|
SJ 338-1973
|
General specification for high-voltage rectifier tubes
|
SJ 343-1973
|
Generic specification for gas-filled microwave switching tubes
|
SJ 344-1973
|
General specification for low noise travelling wave tubes
|
SJ 345-1973
|
General specification for power travelling wave tubes
|
SJ 346-1973
|
General specification for O-Type backward wave tubes
|
SJ 347-1973
|
Generic specification for reflex klystrons
|
SJ 362-1973
|
Measurement conditions for reflex klystrons
|
SJ 363-1973
|
Measurement of reflector total current, reflector ion current and reflector leakage current of reflex klystrons
|
SJ 364-1973
|
Measurement of cathode current of reflex klystrons
|
SJ 365-1973
|
Measurement of cathode current variation ratio of reflex klystrons as heater current changes
|
SJ 366-1973
|
Measurement of interelectrode leakage current of reflex klystrons
|
SJ 367-1973
|
Measurement of output power of reflex klystrons
|
SJ 368-1973
|
Measurement of power ripple ratio of reflex klystrons
|
SJ 369-1973
|
Measurement of oscillation frequency of reflex klystrons
|
SJ 370-1973
|
Measurement of electronic tuning range of reflex klystrons
|
SJ 371-1973
|
Measurement of anti-overloading performance of reflex klystronss
|
SJ 37-1977
|
(Production equipment for the electronics industry type designation)
|
SJ 372-1973
|
Measurement of electronic tuning slope of reflex klystrons
|
SJ 373-1973
|
Measurement of frequency pulling of reflex klystrons
|
SJ 374-1973
|
Measurement of load characteristic of reflex klystrons
|
SJ 375-1973
|
Measurement of of pulse modulation characteristic of reflex klystrons
|
SJ 376-1973
|
Measuremnt of electronic tuning hysteresis of reflex klystrons
|
SJ 377-1973
|
Measurement of frequency drift coefficient of reflex klystrons
|
SJ 378-1973
|
Measurement of oscillation stability time of reflex klystron
|
SJ 379-1973
|
Measurement of frequency drift of reflex klystrons
|
SJ 380-1973
|
Measurement of frequency stability of reflex klystrons
|
SJ 381-1973
|
Measurement of frequency temperature coefficient of reflex klystrons
|
SJ 382-1973
|
Measurement of frequency resettability of reflex klystrons
|
SJ 419-1973
|
Measurement conditions for low noise travelling wave tubes
|
SJ 420-1973
|
Methods of measurement for voltages and currents on per-electrode of low noise travelling wave tubes
|
SJ 421-1973
|
Methods of measurement for leakage current between last anode and each electrode of low noise travelling wave tubes
|
SJ 42-1964
|
(Chinese Industry Standard)
|
SJ 42-1977
|
Classification properties, field of applications and marking of metallic coaings and chemically treated layers
|