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Std ID |
Description (Standard Title) |
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SJ 422-1973
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Methods of measuremenet for cathode prehcating time of low noise travelling wave tubes
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SJ 423-1973
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Methods of measurement for matching characteristic of low noise travelling wave tubes
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SJ 424-1973
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Methods of measurement for cold loss of low noise travelling wave tubes
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SJ 425-1973
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Methods of measurement for power gain of low noise travelling wave tubes
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SJ 426-1973
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Methods of measurement for noise figure for low noise travelling wave tubes
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SJ 427-1973
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Methods of measurement for dynamic ranges of low noise travelling wave tubes
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SJ 428-1973
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Methods of measurement for dynamic ranges of low noise travelling wave tubes
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SJ 429-1973
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Methods of measurement for frequency ranges of low noise travelling wave tubes
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SJ 430-1973
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Measurement conditions for O-type backward-wave tubes
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SJ 431-1973
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Methods of measurement for voltages and currents of O-type backward-wave tube on per-electrodes
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SJ 43-1964
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(Chinese Industry Standard)
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SJ 432-1973
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Method of measurement for cathode preheating time of O-type backward-wave tubes
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SJ 433-1973
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Method of measurement for matching characteristics of O-type backward-wave tubes
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SJ 434-1973
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Method of measurement for power-voltage characteristics of O-type backward-wave tubes
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SJ 435-1973
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Method of measurement for frequency-voltage characteristics of O-type backward-wave tubes
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SJ 436-1973
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Method of measurement for frequency pushing figure of O-type backward-wave tubes
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SJ 437-1973
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Method of measurement for frequency pulling figure of O-type backward-wave tubes
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SJ 438-1973
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Method of measurement for spurious oscillations signal-to-noise ratio of O-type backwave tubes
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SJ 439-1973
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Method of measurement for maximum oscillation starting current of O-type backward-wave tubes
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SJ 440-1973
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Method of measurement for grid cut-off voltage of O-type backward-wave tubes
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SJ 441-1973
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Method of measurement for operating frequency range of O-type backward-wave tubes
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SJ 442-1973
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Measurement conditions for high-voltage rectifier tubes
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SJ 443-1973
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Method of measurement for cathode heating time of high-voltage rectifier tubes
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SJ 444-1973
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Methods of measurement for anode current and anode current on underheated condition of high-voltage rectifier tubes
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SJ 445-1973
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Methods of measurement for cathode pulse emission current and cathode pulse emission current on underheated condition of high-voltage rectifier tubes
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SJ 446-1973
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Methods of measurement for tube voltage drop and tube voltage drop on underheated condition of high-voltage rectifier tubes
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SJ 447-1973
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Methods of measurement for pulse tube voltage drop and pulse tube voltage drop on underheated condition of high-voltage rectifier tubes
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SJ 448-1973
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Methods of measurement for static characteristic of high-voltage rectifier tubes
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SJ 449-1973
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Methods of measurement for voltage with standing test for high-voltage rectifier tubes
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SJ 450-1973
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Methods of measurement for anode dissipation power of high-voltage rectifier tubes
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SJ 451-1973
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Methods of measurement for rectifying strength of high-voltage rectifier tubes
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SJ 45-1965
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Type designation system for radio-frequency cables
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SJ 452-1973
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Methods of measurement for reverse current of high-voltage rectifier tubes
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SJ 453-1973
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Methods of measurement for pulse peak of rectifying current of high-voltage rectifier tubes
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SJ 454-1973
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Methods of measurement for peak voltage drop of tube, reverse peak voltage drop of tube and rectifying current of high-voltage rectifier tubes
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SJ 455-1973
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Methods of measurement for static interelectrode capacitance of high-voltage rectifier tubes
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SJ 46-1965
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Electromagnetic loudspeakers for φ200mm
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SJ 50033.40-1994
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Detail specification for type GT11 semiconductor sililcon NPN photo-transistor
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SJ 50033.43-1994
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Semiconductor discrete device. Detail specification for type 2CZ104 silicon switching rectifier diode
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SJ 50033.44-1994
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Semiconductor discrete device. Detail specification for type 2CZ105 silicon witching rectifier diode
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SJ 50033.45-1994
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Semiconductor discrete device. Detail specification for type 2CZ58 silicon rectifier diode
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SJ 50033.46-1994
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Semiconductor discrete device. Detail specification for type 2CZ59 silicon rectifier diode
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SJ 50033.47-1994
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Semiconductor discrete device. Detail specification for type 2CZ117 silicon rectifier diode
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SJ 50033.48-1994
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Semiconductor discrete device. Detail specification for type 2DV8CP silicon microwave detector diode
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SJ 50033.49-1994
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Semiconductor discrete device. Detail specification for step recovery diodes for 2CJ4220 series
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SJ 50033.50-1994
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Semiconductor discrete device. Detail specification for type QL73 silicon three phase full wave bridge rectifier
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SJ 50033.51-1994
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Semiconductor discrete devices. Detail specification for type CS0558 GaAs microwave dual gate FET
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SJ 50033.52-1994
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Semiconductor discrete device. Detail specification for type CS0529 GaAs microwave Power field effect transistor
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SJ 50033.53-1994
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Semiconductor discrete device. Detail specification for type CS0530 and CS0531 GaAs microwave Power field effect transistor
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SJ 50033.54-1994
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Semiconductor discrete device. Detail specification for type CS0532 GaAs microwave Power field effect transistor
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SJ 50033.55-1994
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Semiconductor discrete device. Detail specification for type 2CK82 silicon switching diode
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SJ 50033.56-1994
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Semiconductor discrete device. Detail specification for type 2CK85 silicon switching diode
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SJ 50033/100-1995
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Semiconductor discrete device. Detail specification for type 2CJ60 step recovery diodes
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SJ 50033/101-1995
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Detail specification for semiconductor laser diode modules for type GJ1325
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SJ 50033/10-1994
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Discrete semiconductor devices Detailed specifications for 3DK207 power switching transistors
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SJ 50033/102-1995
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Detail specification for InGaAs/InP photodiode for type GD 218
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SJ 50033/103-1996
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Semiconductor discrete device. Detail specification for type 3DA89 high-frequency power transistor
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SJ 50033/104-1996
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Semiconductor discrete device. Detail specification for type 3DK002 power switching transistor
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SJ 50033/105-1996
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Semiconductor discrete device Detail specification for type 3DK404 power switching transistor
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SJ 50033/106-1996
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Semiconductor discrete device. Detail specification for type CS203 GaAs microwave low noise field effect transistor
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SJ 50033/107-1996
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Semiconductor discrete device. Detail specification for Gunn diodes for type 2EY621, 2EY622, 2EY623
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SJ 50033/108-1996
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Semiconductor discrete device. Detail specification for Gunn diodes for type 2EY5671, 2EY5672
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SJ 50033/109-1996
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Semiconductor discrete device. Detail specification for type GJ9032T and GJ9034T semiconductor laser diodes
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SJ 50033/110-1996
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Semiconductor optoelectronic devices. Detail specification for type GR9413 infrared light emitting diode
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SJ 50033/111-1996
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Semiconductor optoelectronic devices. Detail specification for type GT16 Si.NPN phototransistor
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SJ 50033/11-1994
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Discrete semiconductor devices Detailed specifications for 3DK208 power switching transistors
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SJ 50033/112-1996
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Semiconductor discrete device. Detail specification for type GD3251Y photodiodes
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SJ 50033/113-1996
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Semiconductor discrete device. Detail specification for type GD3252Y photodiodes
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SJ 50033/114-1996
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Semiconductor discrete device. Detail specification for type GD3283Y position sensitive detector
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SJ 50033/115-1997
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Semiconductor discrete devices. Detail specification for type 2CK28 silicon large current switch diode
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SJ 50033/116-1997
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Semiconductor discrete devices. Detail specification for type 2CK29 silicon large current switch diode
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SJ 50033/117-1997
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Semiconductor discrete devices. Detail specification for type 2CK38 silicon large current switch diode
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SJ 50033/118-1997
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Semiconductor discrete devices. Detail specification for type 2EK31 GaAs switching diode
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SJ 50033/119-1997
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Semiconductor discrete devices. Detail specification for type CS204 GaAs microwave power field effect transistor
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SJ 50033/1-1994
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Semiconductor discrete device. Detail specification for type 3DA150 high frequency and power transistor
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SJ 50033/120-1997
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Semiconductor discrete devices. Detail specification for type CS205 GaAs microwave power field effect transistor
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SJ 50033/121-1997
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Semiconductor discrete devices. Detail specification for type CS3458-CS3460 silicon N-channel junction mode field-effect transistors
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SJ 50033/12-1994
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Discrete semiconductor devices Detailed specifications for 3DK209 power switching transistors
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SJ 50033/122-1997
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Semiconductor discrete devices. Detail specification for type CS3684-CS3687 silicon N-channel junction mode field-effect transistors
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SJ 50033/123-1997
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Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN62317
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SJ 50033/124-1997
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Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN101~105
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SJ 50033/125-1997
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Semiconductor discrete device. Detail specification for silicon power PIN diodes for type PIN11~15
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SJ 50033/126-1997
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Semiconductor discrete device. Detail specification for type 2DK13 SCHOTTKY ailicon switching rectifier diode
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SJ 50033/127-1997
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Semiconductor discrete devices. Detail specification for type 2DK14 SCHOTTKY ailicon switching rectifier diode
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SJ 50033/128-1997
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Semiconductor discrete devices. Detail specification for type 2DK15 SCHOTTKY ailicon switching rectifier diode
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SJ 50033/129-1997
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Semiconductor discrete devices. Detail specification for type 3DD155 low-frequency and high - Power transistor
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SJ 50033/130-1997
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Semiconductor discrete devices. Detail specification for type 3DD159 low - Frequency and high - Power transistor
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SJ 50033/131-1997
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Semiconductor discrete devices. Detail specification for type 3DD157 low - Frequency and high - Power transistor
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SJ 50033/13-1994
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Discrete semiconductor devices Detailed specifications for 3DK210 power switching transistors
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SJ 50033/132-1997
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Semiconductor discrete devices. Detail specification for type 3DD260 low - Frequency and high - Power transistor
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SJ 50033/133-1997
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Semiconductor discrete devices. Detail specification for type SY5629-5665A tramsient voltage suppression diodes
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SJ 50033/134-1997
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Semiconductor discrete devices. Detail specification for type 3DD167 low - Frequency and high - Power transistor
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SJ 50033/135-1997
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Semiconductor discrete devices. Detail specification for type 2CZ10 silicon switching rectifier diode
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SJ 50033/136-1997
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Semiconductor optoelectronic devices. Detail specification for red light emitting diode for type GF116
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SJ 50033/137-1997
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Semiconductor optoelectronic devices. Detail specification for orange - Red light emitting diode for type GF216
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SJ 50033/138-1998
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Semiconductor optoelectronic devices. Detail specification for yellow light - Emitting diode for type GF318
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SJ 50033/139-1998
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Semiconductor optoelectronic devices. Detail specification for green light - Emitting diode for type GF4111
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SJ 50033/140-1999
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Semiconductor discrete devices. Detail specification for type 3DA502 silicon microwave pulse power transistor
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SJ 50033/141-1999
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Semiconductor discrete devices. Detail specification for type 2EK150 FaAs high speed switching diode
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SJ 50033/14-1994
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Discrete semiconductor devices Detailed specifications for 3DK305 power switching transistors
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