|
Std ID |
Description (Standard Title) |
|
SJ 2193-1982
|
Electrical parameter series for chokes of rectifier filters
|
|
SJ 2194-1982
|
CDL-100/C filter chokes using C-cores (inputted by capacitance)
|
|
SJ 2195-1982
|
CDL-100/L filter chokes using C-cores (inputted by inductance)
|
|
SJ 2199-1982
|
Terminology for electro-acoustic devices
|
|
SJ 2206-1982
|
Reflex klystrons, Type K-21
|
|
SJ 2207-1986
|
(Chinese Industry Standard)
|
|
SJ 2214.10-1982
|
Method of measurement for light current of semiconductor photodiodes and phototransistors
|
|
SJ 2214.1-1982
|
General procedures of measurement for semiconductor photodiodes and phototransistors
|
|
SJ 2214.2-1982
|
Method of measurement for forward voltage of semiconductor photodiodes
|
|
SJ 2214.3-1982
|
Method of measurement for dark current of semiconductor photodiodes
|
|
SJ 2214.4-1982
|
Method of measurement for reverse break-down voltage of semiconductor photodiodes
|
|
SJ 2214.5-1982
|
Method of measurement for junction capacitance of semiconductor photodiodes
|
|
SJ 2214.6-1982
|
Method of measurement for collector-emitter reverse breakdown voltage of semiconductor phototransistors
|
|
SJ 2214.7-1982
|
Method of measurement for saturation voltage of semiconductor phototransistors
|
|
SJ 2214.8-1982
|
Method of measurement for dark current voltage of semiconductor phototransistors
|
|
SJ 2214.9-1982
|
Method of measurement for pulse rise and fall time of semiconductor photodiodes and phototransistors
|
|
SJ 2215.10-1982
|
Method of measurement for direct current transfer ratio of semiconductor photocouplers
|
|
SJ 2215.11-1982
|
Method of measurement for pulse rise fall delay and storage time of semiconductor photocouplers
|
|
SJ 2215.1-1982
|
General procedures of measurement for semiconductor photocouplers
|
|
SJ 2215.12-1982
|
Method of measurement for input-to-output capacitance of semiconductor photocouplers
|
|
SJ 2215.13-1982
|
Method of measurement for input-to-output isolation resistance of semiconductor photocouplers
|
|
SJ 2215.14-1982
|
Method of measurement for input-to-output isolation voltage of semiconductor photocouplers
|
|
SJ 2215.2-1982
|
Method of measurement for forward voltage of semiconductor photocouplers (diodes)
|
|
SJ 2215.3-1982
|
Method of measurement for forward current of semiconductor photocouplers (diodes)
|
|
SJ 2215.4-1982
|
Method of measurement for reverse current of semiconductor photocouplers (diodes)
|
|
SJ 2215.5-1982
|
Method of measurement for reverse breakdown voltage of semiconductor photocouplers (diodes)
|
|
SJ 2215.6-1982
|
Method of measurement for junction capacitance of semiconductor photocouplers (diodes)
|
|
SJ 2215.7-1982
|
Method of measurement for collector-emitter reverse breakdown voltage of semiconductor photocouplers (diodes)
|
|
SJ 2215.8-1982
|
Method of measurement for output saturation voltage of semiconductor photocouplers (diodes)
|
|
SJ 2215.9-1982
|
Method of measurement for reverse cut-off current of semiconductor photocouplers transistors
|
|
SJ 2216-1982
|
Silicon photodiodes
|
|
SJ 2218-1982
|
Semiconductor photocouplers in the diode mode
|
|
SJ 2219-1982
|
Semiconductor photocouplers in the transistor mode
|
|
SJ 2220-1982
|
Semiconductor photocouplers in the Darlington transistor mode
|
|
SJ 2221-1982
|
Performance requirements for combination jigs--Medium and small series
|
|
SJ 2222-1982
|
Numbering system for combination jigs--Medium and small series
|
|
SJ 2223-1982
|
Structural features of combination jigs--Medium and small series
|
|
SJ 2224-1982
|
Structural feature of combination jigs--Small series
|
|
SJ 2225-1982
|
Types and dimensions for serialized medium-sized combination jigs
|
|
SJ 2226-1982
|
Types and dimensions for combination jigs--Small series
|
|
SJ 2228-1982
|
(Thick film, thin film resistor network integrated series and variety)
|
|
SJ 2229-1982
|
(Thick film, thin film integrated circuit lumped attenuator series and variety)
|
|
SJ 2230-1982
|
(Thick film, thin film resistor network integrated circuit test method)
|
|
SJ 2231-1982
|
Series and types of direct current voltage regulators for thick-film and thin-film integrated circuits
|
|
SJ 2232-1982
|
Specification for metal packages of thick-film and thin-film integrated circuits
|
|
SJ 2233-1982
|
(Thick film, thin film integrated circuit metal structure size)
|
|
SJ 2234-1982
|
(Ceramic substrates with thick film integrated circuit)
|
|
SJ 2238-1982
|
(CC4 type ceramic capacitors)
|
|
SJ 2239-1982
|
(CT4 type ceramic capacitors)
|
|
SJ 2240.1-1982
|
Variable air dielectric vane trimmer capacitors for Type CW1 and CW1S
|
|
SJ 2240.2-1982
|
Variable air dielectric vane trimmer capacitors for Type CW2 and CW2S
|
|
SJ 2240.3-1982
|
Variable air dielectric vane trimmer capacitors for Type CW3 and CW3S
|
|
SJ 2240.4-1982
|
Variable air dielectric vane trimmer capacitors for Type CW31
|
|
SJ 2240.5-1982
|
Variable air dielectric vane trimmer capacitors for Type CW32
|
|
SJ 2240.6-1982
|
Variable air dielectric vane trimmer capacitors for Type CW41 and CW41S
|
|
SJ 2240.7-1982
|
Variable air dielectric vane trimmer capacitors for Type CW42
|
|
SJ 2240.8-1982
|
Variable air dielectric vane trimmer capacitors for Type CW5 and CW5S
|
|
SJ 2240-1982
|
Generic specification for variable air dielectric vane trimmer capacitors
|
|
SJ 2241.1-1982
|
Variable concentric trimmer capacitors for Type CWT2
|
|
SJ 2241.2-1982
|
Variable concentric trimmer capacitors for Type CWT4Y
|
|
SJ 2241.3-1982
|
Variable concentric trimmer capacitors for Type CWT5Y
|
|
SJ 2241.4-1982
|
Variable concentric trimmer capacitors for Type CWT6
|
|
SJ 2241.5-1982
|
Variable concentric trimmer capacitors for Type CWT7L
|
|
SJ 2241.6-1982
|
Variable concentric trimmer capacitors for Type CWT8Z
|
|
SJ 2241.7-1982
|
Variable concentric trimmer capacitors for Type CWT9J
|
|
SJ 2241-1982
|
Generic specification for variable concentric trimmer capacitors
|
|
SJ 2242-1982
|
Thermal resistance measurements for forced-air cooled heat sinks
|
|
SJ 2244-1982
|
Gas-filled microwave switching tubes, Type RX-54
|
|
SJ 2245-1982
|
Gas-filled microwave switching tubes, Type RX-7
|
|
SJ 2246-1982
|
Gas-filled microwave switching tubes, Type RX-202, RX-203
|
|
SJ 2247-1982
|
Outlines dimension for semiconductor optoelectronic devices
|
|
SJ 2251-1982
|
(Cathode carbonate grades naming)
|
|
SJ 2252-1982
|
(Cathode carbonate)
|
|
SJ 2253-1982
|
Method of measurement of granularity of cathode carbonate
|
|
SJ 2254-1982
|
General requirements for analysis of cathode carbonate (Provisional)
|
|
SJ 2255-1982
|
(Cathode carbonate analysis (Interim))
|
|
SJ 2259-1982
|
Preparing for documentation of supplied with electronic measuring instruments
|
|
SJ 2260-1982
|
(Electronic equipment vehicle models and sizes Series)
|
|
SJ 2261-1982
|
Weight and dimension series for chassis of electronic equipment vehicles
|
|
SJ 2262-1982
|
Weight and dimension series for chassis of electronic equipment vehicles
|
|
SJ 2263-1982
|
Shape and dimension series for frame cross-section of electronic equipment vehicles
|
|
SJ 2264-1982
|
Style and dimension series for doors of electronic equipment vehicles
|
|
SJ 2265-1982
|
Style and dimension series for windows of electronic equipment vehicles
|
|
SJ 2266-1982
|
(Electronic devices the size of a vehicle door opening series)
|
|
SJ 2267-1982
|
General technical requirements for mechanical and electrical assembling of military electronic equipment
|
|
SJ 2268-1983
|
Series of gyromagnetic multi-crystal materials made of magnetic oxides
|
|
SJ 2271-1983
|
Type 3DG104 silicon NPN epitaxial planar super-high frequency low power triodes
|
|
SJ 2272-1983
|
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG44
|
|
SJ 2273-1983
|
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG81
|
|
SJ 2274-1983
|
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG113
|
|
SJ 2275-1983
|
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG85
|
|
SJ 2276-1983
|
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG114
|
|
SJ 2277-1983
|
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG115
|
|
SJ 2278-1983
|
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG72
|
|
SJ 2279-1983
|
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG123
|
|
SJ 2280-1983
|
(3DG131 type NPN silicon epitaxial planar transistor low power UHF)
|
|
SJ 2281-1983
|
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG132
|
|
SJ 2282-1983
|
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG143
|
|
SJ 2283-1983
|
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG144
|
|
SJ 2284-1983
|
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG145
|