SJ/T 11976-2025 PDF English
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Basic data
| Standard ID | SJ/T 11976-2025 (SJ/T11976-2025) |
| Description (Translated English) | Neutron transmutation doped float zone silicon single crystal for Insulate GateBipolar Transistors (IGBT) |
| Sector / Industry | Electronics Industry Standard (Recommended) |
| Classification of Chinese Standard | L90 |
| Classification of International Standard | 31.03 |
| Word Count Estimation | 10,122 |
| Date of Issue | 2025-05-09 |
| Date of Implementation | 2025-08-01 |
| Issuing agency(ies) | Ministry of Industry and Information Technology |
| Summary | This standard specifies the terminology and definitions, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, and quality certificates for neutron transmutation doped zone-melting silicon single crystals (hereinafter referred to as NTD silicon single crystals) used in IGBTs. This document applies to NTD silicon single crystals used in IGBT products. |
