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Verification Regulation of Standard Slice of Single Crystal Silicon Resistivity
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Verification Regulation of Standard Slice of Single Crystal Silicon Resistivity
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Basic data
| Standard ID | JJG 48-2004 (JJG48-2004) |
| Description (Translated English) | Verification Regulation of Standard Slice of Single Crystal Silicon Resistivity |
| Sector / Industry | Metrology & Measurement Industry Standard |
| Classification of Chinese Standard | A56 |
| Classification of International Standard | 17.220 |
| Word Count Estimation | 21,223 |
| Date of Issue | 2004-09-21 |
| Date of Implementation | 2005-03-21 |
| Older Standard (superseded by this standard) | JJG 48-1990 |
| Quoted Standard | 2004 technical regulations issued by national metrology (industrial measurement 2005 Volume 15, Issue 1) |
| Regulation (derived from) | 2004 technical regulations issued by national metrology (industrial measurement 2005 Volume 15, Issue 1) |
| Issuing agency(ies) | State Administration of Quality Supervision, Inspection and Quarantine |
| Summary | This standard applies to the standard sample resistivity silicon initial verification, testing and use of follow-up inspection. |
JJG 48-2004: Verification Regulation of Standard Slice of Single Crystal Silicon Resistivity
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Verification Regulation of Standard Slice of Single Crystal Silicon Resistivity
National Metrology Verification Regulations of the People's Republic
Silicon single crystal resistivity standard sample
Released on.2004-09-21
2005-03-21 implementation
The General Administration of Quality Supervision, Inspection and Quarantine issued
Silicon single crystal resistivity standard sample
Verification procedure
Replace JJG 48-1990
This regulation was approved by the General Administration of Quality Supervision, Inspection and Quarantine on September 21,.2004 and
Implemented on March 21,.2005.
Focal Point. National Radio Measurement Technology Committee
Main drafting unit. China Institute of Metrology
Participated in the drafting unit. Guangzhou Institute of Semiconductor Materials
This procedure entrusts the National Radiometric Technical Committee to explain
The main drafters of this procedure.
Lu Xiaoming (China Institute of Metrology)
Participate in the drafters.
Xie Hongbo (Guangzhou Institute of Semiconductor Materials)
table of Contents
1 Scope (1)
2 Overview (1)
3 Metrological performance requirements (1)
3.1 Measurement range of resistivity of standard samples (1)
3.2 Standard sample nominal value (1)
3.3 Standard sample parameters and performance requirements (1)
4 General technical requirements (2)
5 measuring instrument control (3)
5.1 Verification conditions (3)
5.2 Verification items and verification methods (5)
5.3 Processing of verification results (7)
5.4 Verification cycle (8)
Appendix A Silicon Single Crystal Resistivity Standard Sample Temperature Correction Factor Table (9)
Appendix B Cleaning Methods for Silicon Single Crystal Resistivity Standard Samples (10)
Appendix C Original record of silicon single crystal resistivity standard sample verification (11)
Appendix D Silicon Single Crystal Resistivity Standard Sample Verification Certificate and Verification Result Notice Page Format (12)
Appendix E Calculation and Processing of Calibration Results of Silicon Single Crystal Resistivity Standard Samples (13)
Appendix F Table of Various Correction Coefficients for Calculating Standard Samples of Silicon Single Crystal Resistivity (15)
Appendix G Correction Factor Table (Feg) at 6mm from the edge of the standard sample of silicon single crystals of different diameters (16)
Silicon single crystal resistivity standard sample verification procedure
1 Scope
This procedure is applicable to the first verification, subsequent verification and inspection in the use of silicon single crystal resistivity standard samples.
2 Overview
The silicon single crystal resistivity standard sample (hereinafter referred to as the standard sample) is made of high-purity polycrystalline silicon, which is prepared by single crystal.
It is manufactured by various processes such as neutron enthalpy doping and has a physical standard of certain geometric dimensions. Known by uncertainty
Standard device, the physical resistance of the physical standard and other indicators are calibrated, the standard sample is used as the standard, the phase
The parameter is passed for magnitude measurement.
3 Metrological performance requirements
3.1 Measurement range of resistivity of standard samples
The measurement range of the resistivity is 0.005 Ω·cm to 5000 Ω·cm.
3.2 Standard sample nominal value
The nominal value of the standard sample should meet one of the following 19 specifications, see Table 1.
Table 1 The nominal value of the standard sample Ω·cm
Resistivity nominal value
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
10 25 75 180 250 500 1000.2000 5000
3.3 Standard sample parameters and performance requirements
3.3.1 Standard samples, in addition to the nominal and actual values of resistivity, shall also have the following parameters or data. Conductive
Type, doping element, diameter value, thickness value and usage requirements.
3.3.2 For the standard samples of different levels, the requirements of each indicator are shown in Table 2.
Table 2 Indicators of standard samples
Sample level qualification index
project
National standard sample first-class standard sample secondary standard sample
Diameter (40~75)±1%mm (40~75)±1%mm (25~100)±2%mm
Thickness W≤1.0mm W≤1.0mm W≤1.0mm
Nominal value deviation 0.01Ω·cm~500Ω·cm ±5% ±10% ±15%
Center point resistivity repeatability (2σ) 0.3% 0.4% 0.8%
Radial resistivity unevenness ≤3% ≤4% ≤8%
...
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