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GB/T 44802-2024: Technical specification for insulated-gate bipolar transistor(IGBT) driver of high-voltage direct current power transmission using voltage sourced converters
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GB/T 44802-2024	English	729	Add to Cart	6 days [Need to translate]	Technical specification for insulated-gate bipolar transistor(IGBT) driver of high-voltage direct current power transmission using voltage sourced converters

GB/T 44802-2024: Technical specification for insulated-gate bipolar transistor(IGBT) driver of high-voltage direct current power transmission using voltage sourced converters

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ICS 29.200 CCSK46 National Standard of the People's Republic of China Insulated Gate Bipolar Transistor (IGB T) for HVDC Flexible Drive technical specifications Released on October 26, 2024 Implementation on May 1, 2025 State Administration for Market Regulation The National Standardization Administration issued

Table of Contents

Preface III 1 Scope 1 2 Normative references 1 3 Terms and Definitions 2 4 Conditions of Use 3 4.1 Normal use conditions 3 4.2 Special conditions of use 3 5 General Requirements 3 6 Main parameter selection 3 6.1 General 3 6.2 Power supply voltage 3 6.3 Rated voltage 4 6.4 Turn-on peak current 4 6.5 Turn-off peak current 4 6.6 Driver Power Consumption 4 6.7 Isolation withstand voltage 4 6.8 Collector-emitter connection terminal withstand voltage 4 6.9 Output Light Intensity 4 6.10 Output Turn-On Voltage 4 6.11 Output Shutdown Voltage 4 6.12 Signal transmission delay time 4 7 Technical Requirements 5 7.1 Functional Requirements 5 7.2 Interface Requirements 7 7.3 Environmental test requirements 7 7.4 Electromagnetic compatibility requirements 8 8 Experiment 8 8.1 Type test 8 8.2 Routine test 16 9 Packaging, marking, transportation and storage 19 9.1 Packaging 19 9.2 Sign 19 9.3 Transportation19 9.4 Storage 19 Appendix A (Informative) Driver Introduction 20 Appendix B (Informative) Main parameters of typical drivers for flexible DC 22 Appendix C (Informative) Electromagnetic Compatibility Performance and Test Analysis of IGB T Drivers for Flexible DC Transmission 25 Appendix D (Normative) Driver Submodule Control and Protection Function Test Method 27 Reference 31 Preface This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents" Drafting. Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents. This document is proposed by the China Electrical Equipment Industry Association. This document is under the jurisdiction of the National Technical Committee for Standardization of Power Electronics Systems and Equipment (SAC/TC60). This document was drafted by. China Electric Power Research Institute Co., Ltd., Xi'an High Voltage Electrical Equipment Research Institute Co., Ltd., China Southern Power Grid Co., Ltd. Xi'an Electric Power Technology Research Institute Co., Ltd., Beijing Jiaotong University China Electric Power Research Institute, State Grid Corporation of China, State Grid Economic and Technological Research Institute Co., Ltd., State Grid Jiangsu Electric Power Co., Ltd. China Southern Power Grid Co., Ltd. Ultra-High Voltage Transmission Company, Beijing Lianyan Guoxin Technology Co., Ltd., Xuji Electric Co., Ltd., Tsinghua Sichuan Energy Internet Research Institute, TBEA Xinjiang New Energy Co., Ltd., Guangdong Fude Electronics Co., Ltd., Zhuzhou CRRC Generation Semiconductor Co., Ltd., State Grid Zhejiang Electric Power Co., Ltd. Electric Power Research Institute, State Grid Zhejiang Electric Power Co., Ltd. Zhoushan Power Supply Co., Ltd. Company, Guangdong Power Grid Co., Ltd. Electric Power Research Institute, State Grid Anhui Electric Power Co., Ltd. Electric Power Research Institute, North China Electric Power University, Shenzhen Bronze Sword Technology Co., Ltd. and State Grid Fujian Electric Power Co., Ltd. Electric Power Science Research Institute. The main drafters of this document are. He Zhiyuan, Zhou Huigao, Ke Jinkun, Fu Chuang, Xu Fan, Feng Jingbo, Yang Yuefeng, Yang Xiaohui, Wang Lei, Wen Fuyue, Wei Hongqi, Liu Jiqiu, Hu Zhilong, Wei Wei, Huang Chao, Zhao Zheng, Xu Yang, Bai Jiancheng, Li Lingfei, Zhang Yining, Xia Kepeng, Chen Zhengyu, Zheng Song, Liao Xiaobin, Sun Mei, Ren Yadong, Wei Zheng, Si Zhilei, Zhang Jianping, Liu Li, Li Chao, Xu Hangyu, Chen Ming, Dong Tianhua, Xiao Kai, Chen Qichen, Tan Lingqi, Liu Xiang, Wang Liping, Li Qi, Chen Zhong, Wu Xiaoguang, and Liu Jie. Insulated Gate Bipolar Transistor (IGB T) for HVDC Flexible Drive technical specifications 1 Scope This document specifies the terms and definitions, conditions of use, general requirements, main Parameter selection, technical requirements, testing, as well as packaging, marking, transportation and storage. This document applies to insulated gate bipolar transistors for flexible DC transmission using modular multilevel converter technology at ±800kV and below. The insulated gate bipolar transistor driver is used as a reference for power electronic equipment based on other converter topologies. 2 Normative references The contents of the following documents constitute the essential clauses of this document through normative references in this document. For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies to This document. GB/T 191 Pictorial markings for packaging, storage and transportation GB/T 2423.1-2008 Environmental testing for electric and electronic products Part 2.Test methods Test A. Low temperature GB/T 2423.2-2008 Environmental testing for electric and electronic products Part 2.Test methods Test B. High temperature GB/T 2423.4-2008 Environmental testing for electric and electronic products Part 2.Test method Test Db cyclic damp heat (12h 12h cycle) GB/T 2423.7-2018 Environmental testing Part 2.Test methods Test Ec. Impact caused by rough operation (mainly used for Equipment type sample) GB/T 2423.10-2019 Environmental testing Part 2.Test methods Test Fc. Vibration (sinusoidal) GB/T 2423.16-2022 Environmental testing Part 2.Test methods Test J and guidance. Mildew growth GB/T 2423.17-2024 Environmental testing Part 2.Test methods Test Ka. Salt spray GB/T 2423.22-2012 Environmental testing Part 2.Test method Test N. Temperature change GB/T 4798.2 Classification of environmental conditions - Classification of environmental parameter groups and their severity - Part 2.Transport and handling GB/T 13384 General technical requirements for packaging of electromechanical products GB/T 14598.27 Measuring relays and protective devices Part 27.Product safety requirements GB/T 17626.2-2018 Electromagnetic compatibility test and measurement technology Electrostatic discharge immunity test GB/T 17626.3-2023 Electromagnetic compatibility test and measurement techniques Part 3.Radio frequency electromagnetic field radiated immunity test GB/T 17626.4-2018 Electromagnetic compatibility test and measurement technology Electrical fast transient burst immunity test GB/T 17626.5-2019 Electromagnetic compatibility test and measurement technology surge (shock) immunity test GB/T 17626.6-2017 Electromagnetic compatibility test and measurement techniques Immunity to conducted disturbances induced by radio frequency fields GB/T 17626.8-2006 Electromagnetic compatibility test and measurement technology Power frequency magnetic field immunity test GB/T 17626.9-2011 Electromagnetic compatibility test and measurement technology pulse magnetic field immunity test GB/T 17626.10-2017 Electromagnetic compatibility test and measurement techniques Damped oscillatory magnetic field immunity test GB/T 17626.12-2023 Electromagnetic compatibility test and measurement techniques Part 12.Ring wave immunity test GB/T 17626.18-2016 Electromagnetic compatibility test and measurement technology Damped oscillatory wave immunity test GB/T 29332-2012 Semiconductor devices—Discrete devices—Part 9.Insulated gate bipolar transistors (IGB T) ...