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GB/T 44181-2024: Space environment - Method of single event upset rates prediction of semiconductor devices for space applications
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GB/T 44181-2024: Space environment - Method of single event upset rates prediction of semiconductor devices for space applications

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Space environment - Method of single event upset rates prediction of semiconductor devices for space applications Space Environment Semiconductor Devices for Spaceflight in Orbit Single Event Upset Rate Prediction Method Space environment-Method of single event upset rates prediction of semiconduct﹘ or devices for space applications ICS 49.020 CCS V 06 National Standard of the People's Republic of China Released on 2024-07-24 2024-07-24 implementation State Administration for Market Regulation The National Standardization Administration issued

Table of Contents

Preface ... Ⅲ 1 Scope ... 1 2 Normative references ... 1 3 Terms and Definitions ... 1 4 Abbreviations ... 2 5 Principle ... 2 6 Process ... 3 7 Calculation of LET spectrum of charged particles in space and proton energy spectrum ... 5 7.1 Overview ... 5 7.2 Determination of space orbit parameters and shielding thickness 5 7.3 Calculation of energy spectrum of charged particles in space 5 7.4 LET spectrum calculation 6 8 Irradiation test data processing and analysis ... 6 8.1 Overview 6 8.2 Preparation of input data 6 8.3 Obtaining Sensitive Parameters of Heavy Ion Single Particle Events 6 8.4 Obtaining Sensitive Parameters of Proton Single Event Upset 7 9 Single Event Upset Rate Estimation ... 7 9.1 Estimation of Direct Ionization Single Event Upset Rate 7 9.2 Prediction of the single-event upset rate of proton nuclear reactions on orbit ... 9 10 Prediction of other types of single particle event rates on orbit 9 11 Report ... 9

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents" Drafting is required. Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents. This document was proposed by the Chinese Academy of Sciences. This document is under the jurisdiction of the National Technical Committee on Aerospace Technology and Its Applications Standardization (SAC/TC 425). This document was drafted by. China Academy of Space Technology, National University of Defense Technology, Harbin Institute of Technology, Beijing Institute of Microelectronics Technology Institute, National Space Science Center, Chinese Academy of Sciences. The main drafters of this document are. Sun Yi, Zhang Hongwei, Mei Bo, Mo Rigen, Yu Qingkui, Wei Zhichao, Cao Shuang, Tang Min, Zhu Hengjing, Huang Jinying, Liang Bin, Li Changhong, Han Jianwei, Wang Tianqi, Ma Yingqi, and Zheng Hongchao. Space Environment Semiconductor Devices for Spaceflight in Orbit Single Event Upset Rate Prediction Method

1 Scope

This document describes the method for conducting on-orbit single event upset rate estimation of semiconductor devices for space flight (hereinafter referred to as “devices”), including the original The main functions of the project are as follows. theory, process, calculation of LET spectrum of space charged particles and proton energy spectrum, processing and analysis of irradiation test data and prediction of single particle upset rate. This document is applicable to the prediction of single event upset rate of devices caused by protons and heavy ions in the natural radiation environment of space. This document is not applicable to the prediction of single-particle upset rates caused by high-energy electrons.

2 Normative references

The contents of the following documents constitute the essential clauses of this document through normative references in this document. For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies. in this document. GB/T 32452 Spacecraft space environment terminology GB/T 41206-2021 Space environment (natural and artificial) Cosmic rays and solar energy particles penetrate the magnetosphere effectively perpendicular to the geomagnetic field Method for determining cut-off stiffness GB/T 44001 Space environment geomagnetic field reference model

3 Terms and definitions

The terms and definitions defined in GB/T 32452 and the following apply to this document. 3.1 Linear Energy Transfer; LET The energy deposited by a charged particle per unit length along its track. Note. The commonly used unit is mega-electron volt square centimeter per milligram (MeV·cm2/mg). 3.2 threshold LET The minimum LET value required for a device to experience a single event event. 3.3 SEU cross section The number of single event upsets occurring per unit particle fluence. Note. σ = single-event upset number/(injection × cosθ), where σ is the single-event upset cross section, usually expressed in square centimeters per device (cm2/device), or square cm2/bit. θ is the angle between the ion incident direction and the surface normal of the device under test. 3.4 Saturation cross section The single-event upset cross section at which the cross section no longer increases with increasing LET value of the incident particle. 3.5 ...