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GB/T 43967-2024: Space environment - Test method of single event effects induced by pulsed laser of semiconductor devices for space application
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GB/T 43967-2024: Space environment - Test method of single event effects induced by pulsed laser of semiconductor devices for space application

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ICS 49:020 CCSV06 National Standards of People's Republic of China Single particle semiconductor devices for aerospace in space environment Effect pulse laser test method Released on 2024-04-25 2024-04-25 implementation State Administration for Market Regulation The National Standardization Administration issued

Table of Contents

Preface III 1 Scope 1 2 Normative references 1 3 Terms and Definitions 1 4 Experimental Purpose 3 5 Test Principle 3 6 General requirements 3 6:1 Test environment 3 6:2 Test sample 3 6:3 Test condition parameter setting 3 6:4 Laser Energy Analysis 5 6:5 Test personnel 5 6:6 Requirements for single event effect pulse laser simulation test equipment 6 6:7 Laser Radiation Safety and Radiation Protection 6 7 Experimental Design 6 7:1 Test sample test hardware design 6 7:2 Test sample test software design 6 7:3 Test requirements 7 8 Experimental process 7 8:1 Experimental plan formulation 7 8:2 Test Procedure 7 8:3 Test start 8 8:4 Laser Single Event Effect Sensitivity Test 8 8:5 Single Event Effects Test 9 8:6 Test stop conditions 9 8:7 Changes in test conditions or test procedures 9 8:8 Changing the sample 9 9 Test result processing 9 9:1 Experimental data analysis and processing 9 9:2 Test report 10 Appendix A (Informative) Principles of Single-Effect Pulse Laser Simulation Test 11

Foreword

This document is in accordance with the provisions of GB/T 1:1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting: Please note that some of the contents of this document may involve patents: The issuing organization of this document does not assume the responsibility for identifying patents: This document was proposed by the Chinese Academy of Sciences: This document is under the jurisdiction of the National Technical Committee on Aerospace Technology and Its Applications Standardization (SAC/TC425): This document was drafted by: National Space Science Center of the Chinese Academy of Sciences, 804th Academy of the Eighth Research Institute of China Aerospace Science and Technology Corporation graduate School: The main drafters of this document are: Han Jianwei, Ma Yingqi, Shangguan Shipeng, Zhu Xiang, Chen Rui, Li Changhong, You Hongjun, Liu Kui, Zhao Xu, Liang Yanan: Single particle semiconductor devices for aerospace in space environment Effect pulse laser test method

1 Scope

This document specifies the use of pulsed laser radiation sources to carry out single event effect simulation tests on aerospace semiconductor devices (hereinafter referred to as "devices") Experimental design and procedures: This document is applicable to pulsed laser simulation tests of single-photon or two-photon absorption mechanisms of single-particle effects, etc: of semiconductor devices for aerospace applications: Experimental design and process control:

2 Normative references

The contents of the following documents constitute the essential clauses of this document through normative references in this document: For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies to This document: GB/T 7247:5 Safety of laser products Part 5: Producer's checklist for GB 7247:1 GB/T 19022 Measurement management system - Requirements for measurement processes and measurement equipment GB/T 27418 Evaluation and expression of measurement uncertainty GB/T 32304 Requirements for electrostatic protection of aerospace electronic products GB/T 39343-2020 Design and procedures for single event tests on aerospace processor devices

3 Terms and definitions

The following terms and definitions apply to this document: 3:1 single event effect single event effect; SEE A single high-energy particle acting on a device can cause flipping, locking, burning, and other phenomena: 3:2 Single event upset; SEU An effect in which a single high-energy particle acts on a device, causing a change in the device's logical state: 3:3 Single event latching single event latchup; SEL A single high-energy particle acts on the silicon substrate circuit, causing the parasitic thyristor structure to turn on, resulting in a low resistance, high current state of the device: Radiation effect: 3:4 single event burnout; SEB A single high-energy particle acts on a semiconductor power device, causing the parasitic transistor to turn on, causing the device to break down in a high-current, high-voltage state: or an effect of thermal damage: ...