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GB/T 43366-2023: General specification for discrete semiconductor devices of space application
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GB/T 43366-2023: General specification for discrete semiconductor devices of space application

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ICS 49:035 CCSV25 National Standards of People's Republic of China General specification for semiconductor discrete devices for aerospace applications ofspaceapplication 2024-03-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration Committee

Table of contents

Preface V 1 Scope 1 2 Normative references 1 3 Terms and Definitions 2 4 Technical requirements 3 4:1 General requirements 3 4:2 Quality Assurance Level 3 4:3 Design 3 4:4 Materials 3 4:5 Logo 3 4:6 Production process 6 4:7 Outsourcing processing and outsourcing chips 7 4:8 Basic requirements 8 5 Test methods 12 5:1 Internal visual inspection12 5:2 Appearance and dimensional inspection 12 5:3 Parameter performance 12 5:4 High temperature life 12 5:5 Temperature Cycle 12 5:6 Diode durability test 12 5:7 Transistor durability test 12 5:8 Wire bond strength13 5:9 Scanning electron microscopy (SEM) 13 5:10 Surge 13 5:11 Thermal response 13 5:12 Constant acceleration13 5:13 Particle collision noise detection test 13 5:14 Detailed leak detection 13 5:15 Rough leak detection 13 5:16 Transistor high temperature reverse bias 13 5:17 Power FET high temperature reverse bias 13 5:18 High temperature reverse bias of diode 14 5:19 Radiography 14 5:20 Ultrasound scan 14 5:21 Solderability14 5:22 Solvent resistance 14 5:23 Thermal shock (liquid-liquid) 14 5:24 Intermittent working life 14 5:25 Diode thermal resistance 14 5:26 Thermal resistance of bipolar transistor 14 5:27 Power FET thermal resistance 14 5:28 Thermal resistance of thyristor 14 5:29 IGB T thermal resistance 14 5:30 GaAsFET thermal resistance 15 5:31 Weight 15 5:32 Moisture resistance 15 5:33 Impact 15 5:34 Sweep vibration 15 5:35 Salt gas (erosion) 15 5:36 Internal atmosphere content 15 5:37 Pressure cooking15 5:38 Steady-state total radiation dose 15 5:39 Single event effects15 5:40 Destructive Physical Analysis (DPA) 15 5:41 Low pressure (only applicable to devices with rated voltage greater than:200V) 16 5:42 Electrostatic discharge susceptibility (ESDS) 16 5:43 Resistance to welding heat 16 5:44 Preprocessing 16 5:45 Reflow soldering simulation 16 5:46 Terminal strength 16 5:47 Strong acceleration steady state moist heat 16 6 Inspection Rules 16 6:1 General 16 6:2 Inspection classification 16 6:3 Environmental conditions for testing and inspection16 6:4 Inspection Lot 17 6:5 Screening 17 6:6 Appraisal and inspection 19 6:7 Quality consistency inspection19 6:8 User supervision 27 6:9 User acceptance27 7 Packaging, labelling, transportation and storage 27 7:1 Packaging and labeling 27 7:2 Transportation and storage 28 Appendix A (Normative) Material Requirements 29 A:1 General requirements 29 A:2 Packaging materials29 A:3 Plating of devices 30 Appendix B (informative) User supervision 32 B:1 Supervision methods32 B:2 Supervision content32 B:3 Supervision 32 Appendix C (informative) User acceptance 34 C:1 General 34 C:2 Acceptance work content34 C:3 Quality Document Review34 C:4 Acceptance test 34 C:5 Acceptance results and processing 35

Foreword

This document complies with the provisions of GB/T 1:1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents" Drafting: Please note that some content in this document may be subject to patents: The publisher of this document assumes no responsibility for identifying patents: This document is proposed and coordinated by the National Aerospace Technology and Application Standardization Technical Committee (SAC/TC425): This document was drafted by: China Academy of Launch Vehicle Technology, China Academy of Space Technology, Xi'an University of Electronic Science and Technology, Jinan Semiconductor Component Laboratory, Beijing Zhongke Xinweite Technology Development Co:, Ltd:, State-owned No: 873 Factory, Shenzhen Jihua Weite Electronics Co:, Ltd:, Chaoyang Microelectronics Technology Co:, Ltd: The main drafters of this document: Jiachunlei, Zhang Wei, Li Peng, Cong Zhongchao, Zhang Aixue, Xiong Shengyang, Sun Yan, Zhang Ying, Xue Junshuai, Cui Tong, Wang Yingchun, Zhang Yanfei, Li Shouquan, Chen Jiang, Qu Heran, Li Zhifu: General specification for semiconductor discrete devices for aerospace applications

1 Scope

This document specifies the general requirements, quality assurance regulations, delivery preparation and instructions for aerospace semiconductor discrete devices (hereinafter referred to as "devices"): Matters needing attention: This document applies to the design, production, inspection and sales of semiconductor discrete devices for aerospace use:

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text: Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document: GB/T 4023-2015 Semiconductor devices Discrete devices and integrated circuits Part 2: Rectifier diodes GB/T 4586-1994 Semiconductor devices Discrete devices Part 8: Field effect transistors GB/T 4587-1994 Semiconductor discrete devices and integrated circuits Part 7: Bipolar transistors GB/T 4589:1-2006 Semiconductor discrete devices Part 10: General specifications for discrete devices and integrated circuits GB/T 4937:2-2006 Mechanical and climatic test methods for semiconductor devices Part 2: Low pressure GB/T 4937:3-2012 Mechanical and climatic test methods for semiconductor devices Part 3: External visual inspection GB/T 4937:4-2012 Mechanical and climatic test methods for semiconductor devices Part 4: Strongly accelerated steady-state damp heat test (HAST) GB/T 4937:11-2018 Mechanical and climatic test methods for semiconductor devices Part 11: Rapid temperature change double liquid slot method GB/T 4937:12-2018 Mechanical and climatic test methods for semiconductor devices Part 12: Sweeping vibration GB/T 4937:13-2018 Mechanical and climatic test methods for semiconductor devices Part 13: Salt spray GB/T 4937:14-2018 Mechanical and climatic test methods for semiconductor devices Part 14: Terminal strength (leads are secure sex) GB/T 4937:15-2018 Mechanical and climatic test methods for semiconductor devices Part 15: Solder resistance of through-hole mounting devices Receive heat GB/T 4937:18-2018 Mechanical and climatic test methods for semiconductor devices Part 18: Ionizing radiation (total dose) GB/T 4937:19-2018 Mechanical and climatic test methods for semiconductor devices Part 19: Chip shear strength GB/T 4937:20-2018 Mechanical and climatic test methods for semiconductor devices Part 20: Moisture resistance of plastic-encapsulated surface-mounted devices Combined effects of moisture and welding heat GB/T 4937:21-2018 Mechanical and climatic test methods for semiconductor devices Part 21: Solderability GB/T 4937:22-2018 Mechanical and climatic test methods for semiconductor devices Part 22: Bonding strength GB/T 4937:30-2018 Mechanical and climatic test methods for semiconductor devices Part 30: Non-sealed surface mount devices in Preprocessing before reliability test GB/T 15291-2015 Semiconductor devices Part 6: Thyristors GB/T 19403:1-2003 Semiconductor device integrated circuits Part 11: Part 1: Internal visual inspection of semiconductor integrated circuits ...