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GB/T 43226-2023: Time-domain test methods for space single event soft errors of semiconductor integrated circuit
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GB/T 43226-2023: Time-domain test methods for space single event soft errors of semiconductor integrated circuit

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ICS 49.140 CCSV25 National Standards of People's Republic of China Single event soft errors in aerospace semiconductor integrated circuits Time domain testing method Published on 2023-09-07 2024-01-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration Committee

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is proposed and coordinated by the National Aerospace Technology and Application Standardization Technical Committee (SAC/TC425). This document was drafted by. Beijing Institute of Microelectronics Technology, China Academy of Aerospace Electronics Technology. The main drafters of this document. Zhao Yuanfu, Chen Lei, Wang Liang, Yue Suge, Zheng Hongchao, Li Zhe, Lin Jianjing, Li Yongfeng, Chen Miao, and Wang Hanning. Single event soft errors in aerospace semiconductor integrated circuits Time domain testing method

1 Scope

This document specifies the principles, environmental conditions, instruments and equipment, and test samples for single-element soft error time domain testing of semiconductor integrated circuits for aerospace use. products, test procedures, and test reports. This document is applicable to the testing of single-event soft errors of semiconductor integrated circuits used in aerospace applications.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document. GB 18871-2002 Basic standards for ionizing radiation protection and radiation source safety

3 Terms and definitions

The following terms and definitions apply to this document. 3.1 A general term for a series of single event effects that have non-destructive effects on circuits. Note. Such as single particle flip, single particle transient, single particle function interruption. 3.2 Time-domain test time-domaintest Test the change relationship of the characteristic parameters of the tested object with time. 3.3 single event effect single event effect When a single particle passes through the sensitive area of the integrated circuit, the electron-hole pairs generated by ionization are collected by the electric field to form a pulse current, causing the integrated circuit to Path radiation damage. 3.4 Single particle flip singleeventupset The single event effect causes the logic state flipping of integrated circuits. 3.5 single particle transientsingleeventtransient The single event effect causes the integrated circuit to output abnormal pulse signals. 3.6 The single event effect causes the logic circuit to be unable to complete the specified logic function. 3.7 fluence The total number of particles per unit area in the direction of normal incidence. Note. The unit is the number of particles per square centimeter (ion/cm2). ...