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GB/T 4058: Historical versions
| Std ID | Version | USD | Buy | Deliver [PDF] in | Title (Description) |
| GB/T 4058-2009 | English | 439 |
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Test method for detection of oxidation induced defects in polished silicon wafers
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| GB/T 4058-1995 | English | 359 |
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Test method for detection of oxidation induced defects in polished silicon wafers
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| GB/T 4058-1983 | English | RFQ |
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Single crystal silicon--Detection of microdefects--Hot oxidation-etching technique
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Basic data
| Standard ID | GB/T 4058-2009 (GB/T4058-2009) |
| Description (Translated English) | Test method for detection of oxidation induced defects in polished silicon wafers |
| Sector / Industry | National Standard (Recommended) |
| Classification of Chinese Standard | H80 |
| Classification of International Standard | 29.045 |
| Word Count Estimation | 19,177 |
| Date of Issue | 2009-10-30 |
| Date of Implementation | 2010-06-01 |
| Older Standard (superseded by this standard) | GB/T 4058-1995 |
| Quoted Standard | GB/T 1554; GB/T 14264; YS/T 209 |
| Regulation (derived from) | National Standard Approval Announcement 2009 No.12 (Total No.152) |
| Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China |
| Summary | This standard specifies the polished silicon oxide induced defects in test methods. This standard is applicable to the detection of polished silicon surface area analog induced oxidation processes or enhanced crystal defects. Inspection monocrystalline silicon oxide induced defects can also refer to this method. |
GB/T 4058-2009: Test method for detection of oxidation induced defects in polished silicon wafers
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for detection of oxidation induced defects in polished silicon wafers
ICS 29.045
H80
National Standards of People's Republic of China
Replacing GB/T 4058-1995
Polished silicon oxide induced defects in test methods
Posted 2009-10-30
2010-06-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard replaces GB/T 4058-1995 "Test Method polished silicon oxide induced defects."
This standard compared with GB/T 4058-1995, the main changes are as follows.
--- Range increased oxidation test silicon single crystal induced defects;
--- Increasing the reference standard;
--- Added "Terms and Definitions" chapter;
--- Original standard "in Table 1 four commonly used chemical polishing liquid formula," deleted, in Chapter 5 of the chemical polishing liquid ratio was revised
Modify, delete, acetic acid formulation; increase the preparation of chromic acid solution A, Sirtl etching solution preparation and Wright etching solution; increased
Several international common non-chromium, chromium etching solution formulation, application and suitability classification comparative table;
--- By oxidation procedure to replace the original standard procedures oxidation; increasing the (111) surface defect display method, and Wright rot
Etching time etching solution of the (111) plane and the (100) surface display method to distinguish the defect; a display (100) surface defects increases
Wright etch solution method;
--- Increasing the "m" shaped measuring method in defects observed in the selected measuring point.
Appendix A of this standard is an informative annex.
This standard by the National Standardization Technical Committee of semiconductor equipment and materials proposed.
This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material.
This standard was drafted. Emei Semiconductor Material Factory.
The main drafters of this standard. He Lanying, Wang Yan, Zhang Huijian, Liu Yang.
This standard replaces the standards previously issued as follows.
--- GB 4058-1983, GB/T 4058-1995;
--- GB 6622-1986, GB 6623-1986.
Polished silicon oxide induced defects in test methods
1 Scope
This standard specifies the polished silicon oxide induced defects in test methods.
This standard is applicable to the detection zone in the surface of polished silicon wafers Analog oxidation process induced or enhanced crystal defects.
Inspection oxidation induced defects in silicon single crystal can also refer to this method.
2 Normative references
The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent
Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research
Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard.
GB/T 1554 crystallographic perfection of silicon by preferential etch test methods
GB/T 14264 semiconductor material terms
YS/T 209 native silicon material defect map
3 Terms and Definitions
Terms and definitions GB/T 14264 in the provisions applicable to this standard.
4 principle of the method
Oxidizing conditions Analog technology, the use of oxidation dressed or expand wafer defects, or both, followed by preferential etching solution
Display defects, and observation by microscopy.
5 Reagents and materials
5.1 trioxide, pure class distinctions.
5.2 hydrofluoric acid, pure class distinctions.
5.3 nitric acid, pure class distinctions.
5.4 ammonia, pure class distinctions.
5.5 hydrochloric acid, pure class distinctions.
5.6 hydrogen peroxide, pure class distinctions.
5.7 pure water resistivity greater than 10MΩ · cm (25 ℃).
5.8 acetic acid, pure class distinctions.
5.9 copper nitrate, pure class distinctions.
5.10 cleaning solution # 1. water. aqueous ammonia. hydrogen peroxide = 1 pixel in horizontal (volume ratio).
5.11 cleaning solution # 2. water. hydrochloric acid. hydrogen peroxide = 1 pixel in horizontal (volume ratio).
Chemical polishing liquid ratio 5.12. HF.HNO3 = 1. (3 ~ 5) (ratio by volume).
5.13 chromic acid Solution A. chromium trioxide 500g weighed into a beaker of water after complete dissolution, transferred to 1000mL volumetric flask, dilute with water
Diluted to volume, and mix (see GB/T 1554).
5.14 chromic acid solution B. Weigh 75g of chromium trioxide in the beaker, after dissolved in water and transferred to 1000mL volumetric flask, dilute to the mark with water
Degree, and mix.
5.15 Sirtl etching solution. chromic acid solution A (5.13). hydrofluoric acid = 1/1 (volume ratio), the preparation before use.
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