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Processor device single event effects experiment design and procedure for aerospace
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Basic data
| Standard ID | GB/T 39343-2020 (GB/T39343-2020) |
| Description (Translated English) | Processor device single event effects experiment design and procedure for aerospace |
| Sector / Industry | National Standard (Recommended) |
| Classification of Chinese Standard | V25 |
| Classification of International Standard | 49.035 |
| Word Count Estimation | 22,239 |
| Date of Issue | 2020-11-19 |
| Date of Implementation | 2021-06-01 |
| Regulation (derived from) | National Standard Announcement No. 26 of 2020 |
| Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration |
GB/T 39343-2020: Processor device single event effects experiment design and procedure for aerospace
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
(Design and program of single event experiment for aerospace processor device)
ICS 49:035
V25
National Standards of People's Republic of China
Design and program of single event test for aerospace processor device
2020-11-19 released
2021-06-01 implementation
State Administration for Market Regulation
Issued by the National Standardization Management Committee
Table of contents
Foreword Ⅰ
1 Scope 1
2 Normative references 1
3 Terms and definitions, abbreviations 1
3:1 Terms and definitions 1
3:2 Abbreviations 2
4 General requirements 2
4:1 Test environment 2
4:2 Test sample 3
4:3 Basic Principle 3
4:4 Demand analysis 4
4:5 Test preparation 4
5 Experimental design 5
5:1 Hardware Design 5
5:1:1 Overview 5
5:2 Software Architecture 7
5:3 Software Design 7
6 Test process 11
6:1 Test procedure 11
6:2 Precautions 12
6:3 Test judgment 12
6:4 Test interruption 13
6:5 Test failure criterion 13
6:6 Troubleshooting 13
6:7 Test safety 13
7 Processing of test results 13
7:1 Test data record 13
7:2 Test data analysis 14
7:3 Test report 14
Appendix A (informative appendix) Test site 16
Appendix B (Informative Appendix) Single Event Test Report Format for Aerospace Processor Devices 18
Foreword
This standard was drafted in accordance with the rules given in GB/T 1:1-2009:
Please note that certain contents of this document may involve patents: The issuing agency of this document is not responsible for identifying these patents:
This standard was proposed and managed by the National Aerospace Technology and Application Standardization Technical Committee (SAC/TC425):
This standard was drafted by the 771th Research Institute of the Ninth Research Institute of China Aerospace Science and Technology Corporation:
The main drafters of this standard: Zhang Qun, Liu Hongwei, Ma Zhenhua, Li Chun:
Design and program of single event test for aerospace processor device
1 Scope
This standard specifies the design and procedures of single-event tests for aerospace processor devices:
This standard applies to the design and process control of single-event experiments for aerospace processor devices, and can be implemented by reference to other applications:
2 Normative references
The following documents are indispensable for the application of this document: For dated reference documents, only the dated version applies to this article
Pieces: For undated references, the latest version (including all amendments) applies to this document:
GB 18871-2002 Basic standard for ionizing radiation protection and radiation source safety
3 Terms and definitions, abbreviations
3:1 Terms and definitions
The following terms and definitions apply to this document:
3:1:1
Processordevice
A device containing a processor inside can be a device that refers and executes instructions in normal use:
3:1:2
Single event effects; SEE
A term describing many effects in a single event event:
3:1:3
Single event phenomenon; SEP
The collective term for a series of responses of semiconductor devices triggered by the impact of a single high-energy particle, including effects caused by neutrons and protons:
3:1:4
Single Event Upset; SEU
A single high-energy particle acts on the device to cause a radiation effect to change the logic state of the device:
3:1:5
Single event latchup; SEL
A single high-energy particle triggers the thyristor in the device to turn on, forming a low resistance and high current state:
3:1:6
Single event functional interrupt; SEFI
A single high-energy particle acts on the device, causing the device under test to lose or disrupt its function: Only by resetting and reconfiguration can the device be restored
Features:
3:1:7
Linear energy transfer linear energy transfer; LET
The energy deposited per unit length in the material along the incident direction:
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