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GB/T 37660-2019: Technical specification of power electronic devices for high-voltage direct current (HVDC) transmission using voltage sourced converters (VSC)
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GB/T 37660-2019	English	299	Add to Cart	3 days [Need to translate]	Technical specification of power electronic devices for high-voltage direct current (HVDC) transmission using voltage sourced converters (VSC)

GB/T 37660-2019: Technical specification of power electronic devices for high-voltage direct current (HVDC) transmission using voltage sourced converters (VSC)

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Technical specification of power electronic devices for high-voltage direct current (HVDC) transmission using voltage sourced converters (VSC) ICS 31.080.30 K46 National Standards of People's Republic of China Technical specifications for power electronic devices for flexible DC transmission 2019-06-04 released 2020-01-01 Implementation State Administration for Market Regulation Issued by China National Standardization Administration

Table of contents

Preface Ⅲ 1 Scope 1 2 Normative references 1 3 Terms and definitions 1 4 Ratings and characteristics 2 4.1 Rating 2 4.2 Features 3 5 Test 5 5.1 Routine test 5 5.2 Type test 6 6 Marking and order form 11 6.1 Sign 11 6.2 Order Form 12

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard was proposed by China Electrical Equipment Industry Association. This standard is under the jurisdiction of the National Standardization Technical Committee for Power Electronic Devices for Power Transmission and Distribution (SAC/TC413). Drafting organizations of this standard. Global Energy Internet Research Institute Co., Ltd., Xi'an Power Electronics Technology Research Institute, Xi'an High Voltage Apparatus Research Institute Research Institute Co., Ltd., State Grid Co., Ltd., China Southern Power Grid Research Institute Co., Ltd., Xi’an Aipaike Power Electronics Co., Ltd. Company, Infineon Technology (China) Co., Ltd., China Southern Power Grid Co., Ltd. EHV Transmission Company Maintenance and Test Center, Weihai Xinjia Electronics Co., Ltd., Jiaxing Star Semiconductor Co., Ltd., Xu Ji Group Co., Ltd., State Grid Economic and Technical Research Institute Co., Ltd., Xi'an CRRC Yongdian Electric Co., Ltd., TBEA Xinjiang New Energy Co., Ltd., Xi'an Xidian Electric Research Institute Co., Ltd., State Grid Jiangsu Electric Power Co., Ltd., State Grid Sichuan Electric Power Company Electric Power Research Institute, CRRC Yongji Electric Co., Ltd. Drafters of this standard. Li Qiang, Xu Weihua, Wei Hongqi, Yang Xiaohui, Wang Heng, Luo Xiang, Rao Hong, Zhang Li, Lu Zheng, Chen Ziying, Tang Jinkun, Nie Lianbo, Dai Zhizhan, Mei Nian, Li Tan, Huang Xidong, Chen Jun, Wang Ben, Wei Wei, Luo Yu, Huang Ying, Xia Kepeng, Yu Kai, Sheng Junyi, Dang Rui, Shi Mingming, Xu Xiaoyi, Gan Degang, Wang Zhao, Dong Tianhua, Liu Longchen. Technical specifications for power electronic devices for flexible DC transmission

1 Scope

This standard specifies the terms and definitions, ratings and characteristics, tests, markings and order forms of power electronic devices for flexible DC transmission. This standard applies to IGB T-diode pairs for flexible DC transmission and other types of fully controlled power electronic devices for flexible DC transmission. It can also be implemented by reference.

2 Normative references

The following documents are indispensable for the application of this document. For dated reference documents, only the dated version applies to this article Pieces. For undated references, the latest version (including all amendments) applies to this document. GB/T 4023-2015 Semiconductor devices Discrete devices and integrated circuits Part 2.Rectifier diodes GB/T 29332-2012 Semiconductor Devices Discrete Devices Part 9.Insulated Gate Bipolar Transistors (IGB T) GB/T 34118-2017 Terminology of voltage source converter for high voltage DC system IEC 60747-15.2010 Semiconductor Devices Discrete Devices Part 15.Insulated Power Semiconductor Devices (Semiconductor devices-Discretedevices-Part 15.Isolatedpowersemiconductordevices)

3 Terms and definitions

GB/T 29332-2012, GB/T 34118-2017 and GB/T 4023-2015 and the following terms and definitions apply to This document. 3.1 IGB T-diodepair IGB T-diodepair Combination of IGB T and freewheeling diode in anti-parallel connection. [GB/T 34118-2017, definition 7.4] 3.2 Five-cycle forward surge current five-cyclesurgeforwardcurrent IFSM5 A diode forward current with the waveform in Figure 1 lasting for 5 power frequency cycles. Note. This current is caused by abnormal circuit conditions (such as faults), causing the junction temperature of the device to exceed or may exceed the maximum rating, but the current is during the working life of the device. The number of occurrences during the lifetime is limited. Description. IFSM5---Five-cycle forward surge current; tp --- pulse width. Figure 1 Five-cycle forward surge current waveform ...