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GB/T 3352-2025: Synthetic quartz crystal - Specifications and guidelines for use
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GB/T 3352: Historical versions

Std IDVersionUSDBuyDeliver [PDF] inTitle (Description)
GB/T 3352-2025English1099 Add to Cart 7 days [Need to translate] Synthetic quartz crystal - Specifications and guidelines for use
GB/T 3352-2012English949 Add to Cart 7 days [Need to translate] Synthetic quartz crystal -- Specifications and guide to the use
GB/T 3352-1994English519 Add to Cart 4 days [Need to translate] Synthetic quartz crystal
GB 3352-1982English279 Add to Cart 3 days [Need to translate] Synthetic quartz crystal

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Basic data

Standard ID GB/T 3352-2025 (GB/T3352-2025)
Description (Translated English) Synthetic quartz crystal - Specifications and guidelines for use
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard L21
Classification of International Standard 31.140
Word Count Estimation 54,532
Date of Issue 2025-12-31
Date of Implementation 2026-07-01
Older Standard (superseded by this standard) GB/T 3352-2012
Issuing agency(ies) State Administration for Market Regulation, Standardization Administration of China

GB/T 3352-2025: Synthetic quartz crystal - Specifications and guidelines for use


---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.140 CCSL21 National Standards of the People's Republic of China Replaces GB/T 3352-2012 Specifications and Usage Guidelines for Artificial Quartz Crystals (IEC 60758.2016, MOD) Published on 2025-12-31 Implemented on July 1, 2026 State Administration for Market Regulation The State Administration for Standardization issued a statement.

Table of contents

Preface III Introduction V 1.Scope 1 2 Normative References 1 3.Terms and Definitions 1 4.Technical requirements for artificial quartz crystals 5. 5.Technical requirements for the manufacture of artificial quartz crystals 17 6.Inspection Rules for Artificial Quartz Crystals and Their Materials 21 7.Piezoelectric Synthetic Quartz Crystal User Guide 23 Appendix A (Informative) Instructions for Dot Calipers 31 Appendix B (Informative) Example 32 of Inclusion Density Calculation Appendix C (Informative) Example 33 of Selecting Standard Samples for Inclusion Density Appendix D (Informative) Commonly Used Encapsulation Sampling Procedures 34 Appendix E (Informative) Infrared Coefficient α Value Compensation 36 Appendix F (Informative) Differences between IEC and IEEE standards for orthogonal axis systems of quartz 39 Appendix G (Informative) Consistency of α measurements between dispersive infrared spectrometers and Fourier transform infrared spectrometers 41 References 44 Figure 1.Axis and cutting direction of quartz crystal 8 Figure 2.Ideal cross-section of artificial quartz crystal grown using Z-cut seed crystals. Figure 3.Typical examples of cutting AT slices, r (small diamond) slices, X slices, Y slices, and Z slices. Figure 4.Frequency-temperature characteristics of the test sample 14 Figure 5 Typical stripe system 15 Figure 6.External dimensions of artificial quartz crystal materials (X-axis, Y-axis, Z-axis directions) 18 Figure 7.Reference plane angle deviation 19 Figure 8.Seed center position relative to the Z-axis or Z'-axis dimension 20 Figure 9.Names of axes and planes in a quartz crystal 24 Figure 10.A synthetic quartz crystal grown using a Z-cut seed crystal with a small X-axis dimension, represented in rectangular coordinates. Figure 11 Example 27 of the α-Q value relationship at a wavenumber of 3500 cm⁻¹ Figure A.1 Dot caliper 31 Figure A.2 Digital dot-matrix caliper 31 Figure E.1 Measurement Schematic Diagram 36 Figure E.2 Relationship between measured values and average values of α at wavenumbers α3585 and α3500. Figure F.1 Left-handed and right-handed quartz crystals 40 Figure G.1 Relationship between measured and reference values of α 42 Table 1.Density levels of piezoelectric crystal inclusions (5) Table 2.Density levels of optical crystal inclusions (6) Table 3 Infrared Quality Grades of Piezoelectric Crystals 6 Table 4.Infrared quality and fringe levels of optical crystals 6 Table 5.Corrosion Tunnel Density Level ρ 7 Table 6 Test conditions and requirements for Group A (lot-by-lot inspection) 22 Table 7 Test conditions and requirements for Group B (lot-by-lot inspection) 22 Table 8 Test conditions and requirements for batch-by-batch inspection 23 Table B.1 Sampling of Commodity Bar Stock – Method 1 32 Table B.2 Sampling of Commodity Bar Stock – Method 2 32 Table E.1 Example of α3583 Corrected Data 37 Table E.2 Example of α3500 Correction Data 37

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents". Drafting. This document replaces GB/T 3352-2012 "Specifications and Guidelines for the Use of Artificial Quartz Crystals". Compared with GB/T 3352-2012, except for... Aside from structural adjustments and editorial changes, the main technical changes are as follows. ---Added five terms and their definitions for characterizing the properties of synthetic quartz crystals for optical applications (see 3.27, 3.28, 3.29, 3.30, and 3.31); ---Some terms and their definitions have been deleted (see sections 3.2.3, 3.6, 3.8.1, 3.11, and 3.13 in the.2012 edition); ---The technical requirements and testing methods for artificial quartz crystals used in optics have been increased, namely, the classification of inclusion density, fringes, and α values. The transmittance index was clearly defined and refined (see 4.1.3.2, 4.1.4, 4.1.6, 4.1.8.2, 4.1.9, 4.2.8, 4.2.9), for optical... The procedures for sample preparation and measurement of transmittance have been standardized (see 4.2.11); ---Added usage guidelines for electro-cleaned quartz crystals and high-purity low-aluminum quartz crystals (see 7.6.4); ---The infrared quality level corresponding to the infrared absorption coefficient α3410 value has been deleted (see 4.1.3 in the.2012 edition); ---Examples of α3410 absorption wavenumber and α3410 correction data related to infrared absorption coefficient α value compensation have been removed (see Appendix.2012 edition). Record E); This document is modified to adopt IEC 60758.2016 "Specifications and guidelines for the use of artificial quartz crystals". Compared with IEC 60758.2016, this document has undergone the following structural adjustments. ---Appendices A and D correspond to Appendix D and Appendix A of IEC 60758.2016. The technical differences between this document and IEC 60758.2016, and the reasons therefor, are as follows. ---IEC 60410 (see 6.1.2.2 and 6.2.2.2) has been replaced with the normatively referenced GB/T 2828.1 to accommodate my country's technical requirements. Add components to increase operability; ---IEC 60122-1.2002 (see 4.1.7 and 4.2.7) has been replaced by the normatively referenced GB/T 12273.1-2017. The degree of consistency between them needs to be modified to adapt to my country's technical conditions and increase operability; ---IEC 61994 (alparts) (see Chapter 3) has been replaced with the normatively referenced SJ/T 11743 (all parts) to adapt to my country's national standards. The technical conditions are improved to increase operability; ---Some terms and their definitions have been deleted (see 3.5, 3.9, 3.22, and 3.24 of IEC 60758.2016); ---The phrase "artificial quartz crystals grown in the same autoclave during the same period" has been changed to "artificial quartz crystals grown in the same autoclave during the same period using the same process and the same..." Artificial quartz crystals grown from raw materials and submitted under the same technical conditions (see 3.5) should conform to the actual situation in my country; ---The crystal plane symbol "z" has been changed to "r", and "r" to "R" [see 3.13 and Figures 1, 2b, 3, 9, and 10] to conform to domestic standards. Number system; ---The requirement that "angle deviation should be less than 30'" for seed crystals has been changed to "angle deviation should be less than 20'" (see 4.2.1) to accurately reflect the current domestic processing standards. Technical level; ---The detection light source has been changed (see 4.2.8) to match domestic detection procedures; ---The sample thickness range has been increased (see 4.2.11) to suit practical applications; --- Changed "Big X face" to "X face", "Small X face" to "-X face", and added "(Big X)" and "(Small X)" (see...) 4.3.1), to conform to the customary terminology used in domestic labeling; ---The requirement that the flatness of the datum surface should not exceed "0.2mm" has been changed to "0.1mm" (see 5.1.2) to conform to the actual requirements in my country; ---The description of delivery quantity has been changed from "large" to "small" (see 5.3.4) to align with the modification in 3.5; ---The description of the inspection lot has been changed (see 6.2.2.1) to align with the amendment in 3.5; ---The factor of “seed quality” that affects crystal growth has been added (see 7.1.2) to make the description more comprehensive. The following editorial changes have been made to this document. ---Change the pressure value and unit "Atm" to the International System of Units (SI) value and unit "MPa"; ---Change the angle "35.25°" to "35°15'"; ---Delete descriptive text that is easily misunderstood, has the lowest Q value at the corresponding level, and is incorrect at the B level. Please note that some content in this document may involve patents. The issuing organization of this document assumes no responsibility for identifying patents. This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This document is under the jurisdiction of the National Technical Committee on Standardization of Piezoelectric Devices for Frequency Control and Selection (SAC/TC182). This document was drafted by. Beijing Shijing Optoelectronics Technology Co., Ltd., Jiangyin Tiansheng Optoelectronics High-Tech Co., Ltd., and Shandong Boda Optoelectronics. Limited Liability Company. The main drafters of this document are. Zhu Zhongxiao, Xu Jun, and Liu Shengpu. The release history of this document and the document it replaces is as follows. ---First published in 1981 as GB/T 3352-1982, and revised for the first time in.1994; ---In the second revision in.2012, the content of GB/T 3353-1995 "Guidelines for the Use of Artificial Quartz Crystals" was incorporated. Contents of GB/T 6628-1996 "Man-made Quartz Crystal Materials"; ---This is the third revision.

Introduction

The reason for including artificial quartz crystals for optical applications in this document is as follows. Optical quartz crystals are manufactured by many of the same suppliers as piezoelectric quartz crystals. Equipment used for producing optical quartz crystals. The methods and techniques are similar to those used for piezoelectric quartz crystals. Furthermore, with very minor differences, the properties of piezoelectric and optical synthetic quartz crystal materials are largely the same. Indeed. Therefore, it is appropriate to add relevant content about optical quartz crystals to this document. Specifications and Usage Guidelines for Artificial Quartz Crystals

1 Scope

This document specifies the terms and definitions, and technical specifications for artificial quartz crystals used in frequency control and selection of piezoelectric elements and for optical applications. Technical requirements, measurement methods, inspection rules, and user guidelines. This document applies to artificial quartz crystals (hereinafter referred to as "piezoelectric crystals") used in the manufacture of frequency control and selection piezoelectric elements and optical artificial quartz crystals. Quartz crystal (hereinafter referred to as "optical crystal").

2 Normative references

The contents of the following documents, through normative references within the text, constitute essential provisions of this document. Dated citations are not included. For references to documents, only the version corresponding to that date applies to this document; for undated references, the latest version (including all amendments) applies. This document. GB/T 2421-2020 Overview and Guidelines for Environmental Testing (IEC 60068-1.2013, IDT) GB/T 2828.1 Sampling Procedures for Inspection by Attributes - Part 1.Sampling Schemes Retrieved by Acceptable Quality Limit (AQL) for Lot-by-Lot Inspection (GB/T 2828.1-2012,ISO 2859-1.1999,IDT) GB/T 12273.1-2017 Quartz Crystal Elements with Quality Assessment – Part 1.General Specification (IEC 60122-1.2002) MOD) SJ/T 11743 (all parts) Terminology for piezoelectric and dielectric devices for frequency control and selection Note. SJ/T 11743.1-2019 Terminology for piezoelectric and dielectric devices for frequency control and selection - Part 1.Piezoelectric and dielectric resonators (IEC /TS) 61994-1.2007, IDT) SJ/T 11743.2-2019 Terminology for piezoelectric and dielectric devices for frequency control and selection – Part 2.Piezoelectric and dielectric filters (IEC /TS) 61994-2.2011, IDT) SJ/T 11743.3-2019 Terminology for piezoelectric and dielectric devices for frequency control and selection – Part 3.Piezoelectric and dielectric oscillators (IEC /TS) 61994-3.2011, IDT) SJ/T 11743.4.1-2019 Terminology for Piezoelectric and Dielectric Devices for Frequency Control and Selection - Part 4-1.Materials - Artificial Quartz Crystals (IEC /T S61994-4-1.2007, MOD) SJ/T 11743.4.2-2019 Terminology for Piezoelectric and Dielectric Devices for Frequency Control and Selection - Part 4-2.Materials - Piezoelectric Ceramics (IEC /TS) 61994-4-2.2011, IDT) SJ/T 11743.4.3-2019 Terminology for Piezoelectric and Dielectric Devices for Frequency Control and Selection - Part 4-3.Materials for Dielectric Devices (IEC /T S61994-4-3.2008, IDT) SJ/T 11743.4.4-2019 Terminology for Piezoelectric and Dielectric Devices for Frequency Control and Selection - Part 4-4.Materials for Surface Acoustic Wave Devices (IEC /T S61994-4-4.2010, IDT)

3 Terms and Definitions

The terms and definitions defined in SJ/T 11743 and the following terms and definitions apply to this document. 3.1 Crystals grow in water under high temperature and pressure. The crystal growth process is considered to be a geological change process within the Earth's crust.
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