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GB/T 30858-2025: Polished mono-crystalline sapphire substrate wafer
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Std ID	Version	USD	Buy	Deliver [PDF] in	Title (Description)
GB/T 30858-2025	English	279	Add to Cart	3 days [Need to translate]	Polished mono-crystalline sapphire substrate wafer
GB/T 30858-2014	English	489	Add to Cart	4 days [Need to translate]	Polished mono-crystalline sapphire substrate product

GB/T 30858-2025: Polished mono-crystalline sapphire substrate wafer

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ICS 29.045 CCSH83 National Standards of the People's Republic of China Replaces GB/T 30858-2014 Polished sapphire single crystal substrate Published on 2025-10-31 Implemented on May 1, 2026 State Administration for Market Regulation The State Administration for Standardization issued a statement.

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents". Drafting. This document replaces GB/T 30858-2014 "Polished Sapphire Single Crystal Substrates". Compared with GB/T 30858-2014, except for structural adjustments... Aside from integration and editorial changes, the main technical changes are as follows. a) The scope of application has been changed (see Chapter 1, Chapter 1 of the.2014 edition); b) The definition of "highlight" has been changed (see 3.3, 3.5 in the.2014 edition), and terms and definitions such as "sapphire" have been removed (see.2014 edition). (See sections 3.1 to 3.4), and added the terms and definitions of "stain" and "orange peel" (see sections 3.1 and 3.2); c) A general principle has been added (see Chapter 4); d) The requirements for total impurity content have been changed (see 5.1, 4.1 of the.2014 edition); e) The requirements for crystal integrity have been changed (see 5.2, 4.2 in the.2014 edition); f) The requirement for growth methods has been removed (see 4.3 in the.2014 edition); g) The requirements for surface orientation and main reference plane orientation or main reference slot orientation have been changed, and Figures 1 and 2 (see 5.3,.2014) have been deleted. Version 4.4); h) The requirements for dimensions and tolerances have been changed (see 5.4.1, 4.5 in the.2014 version); i) The requirements for the dimensions and allowable deviations of the reference slot, as well as the structural diagram of the reference slot, have been added (see 5.4.2); j) The requirements for back surface roughness have been changed (see 5.6, 4.7 of the.2014 edition); k) The requirements for positive surface defects have been changed (see 5.7, 4.8 in the.2014 edition); l) The requirements for back surface defects have been changed (see 5.8, 4.9 in the.2014 edition); m) The particle size requirements have been changed (see 5.9, 4.10 in the.2014 edition); n) Changes were made to total impurity content, crystal integrity, surface orientation and main reference plane orientation or main reference groove orientation, dimensions and permissible deviations. Test methods for positive surface roughness (see Chapter 6, Chapter 5 of the.2014 edition); o) The batching requirements have been changed (see 7.2, 6.2 in the.2014 version); p) The testing items and sampling requirements have been changed (see 7.3, 7.4, and 6.3 in the.2014 edition); q) The method for interpreting test results has been changed (see 7.5, 6.4 in the.2014 edition); r) The content of the flag has been changed (see 8.1, 7.1 in the.2014 version); s) The contents of the packaging have been changed (see 8.2, 7.2 of the.2014 edition); t) Added the contents of the accompanying file (see 8.5). Please note that some content in this document may involve patents. The issuing organization of this document assumes no responsibility for identifying patents. This document was prepared by the National Technical Committee on Standardization of Semiconductor Equipment and Materials (SAC/TC203) and the National Semiconductor Equipment and Materials Standards Committee. It was jointly proposed and is under the jurisdiction of the Materials Subcommittee of the Chemical Technology Committee (SAC/TC203/SC2). This document was drafted by. Tiantong Yinxia New Materials Co., Ltd., Nonferrous Metals Technology and Economic Research Institute Co., Ltd., and Qingdao Huaxinjing. Electronics Technology Co., Ltd., Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Guangdong Zhongtu Semiconductor Technology Co., Ltd., Xuzhou Kaicheng Technology Co., Ltd., Ningxia Materials Research Society, North Minzu University, Shenzhen Zhongji New Materials Co., Ltd. The main drafters of this document are. Lu Yarong, Yang Shiyin, Kang Sen, Li Suqing, Zheng Dong, Hang Yin, Zhang Neng, Lu Chun, Han Fenglan, Li Ning, and Wu Jinlong. Dong Fuyuan and Chen Bin. This document was first published in.2014, and this is its first revision. Polished sapphire single crystal substrate

1 Scope

This document specifies the technical requirements, test methods, and inspection procedures for polished sapphire single-crystal substrate wafers (hereinafter referred to as "sapphire substrate wafers"). Rules, markings, packaging, transportation, storage, accompanying documents, and order contents. This document applies to sapphire substrates with a diameter not exceeding.200 mm. The product is primarily used for the epitaxial growth of semiconductor thin films and the production of sapphire wafers. Gemstone patterned substrates, sapphire bonded substrates, etc.

2 Normative references

The contents of the following documents, through normative references within the text, constitute essential provisions of this document. Dated citations are not included. For references to documents, only the version corresponding to that date applies to this document; for undated references, the latest version (including all amendments) applies. This document. GB/T 1031 Product Geometric Specification (GPS) - Surface Roughness Parameters and Their Values Using the Surface Structure Profile Method GB/T 2828.1-2012 Sampling Procedures for Inspection by Attributes – Part 1.Lot-by-lot Inspection Sampling Indexed by Acceptable Quality Limit (AQL) plan GB/T 6624 Visual Inspection Method for Surface Quality of Polished Silicon Wafers GB/T 13387 Method for measuring the length of the reference plane of silicon and other electronic materials wafers GB/T 14140 Test Method for Diameter of Semiconductor Wafers GB/T 14264 Semiconductor Materials Terminology GB/T 19921 Test method for particles on the surface of polished silicon wafers GB/T 25915.1-2021 Cleanrooms and related controlled environments – Part 1.Classification of air cleanliness levels by particle concentration GB/T 29505 Method for measuring surface roughness of flat surfaces of silicon wafers GB/T 30857 Test Method for Thickness and Thickness Variation of Sapphire Substrates GB/T 31092 Sapphire Single Crystal Rod GB/T 31352 Test method for warpage of sapphire substrates GB/T 31353 Test method for bending of sapphire substrate GB/T 33236 Trace Element Chemical Analysis of Polycrystalline Silicon by Glow Discharge Mass Spectrometry GB/T 33763 Method for measuring dislocation density in sapphire single crystals GB/T 34210 Method for determining the crystal orientation of sapphire single crystals GB/T 34612 Method for measuring rocking curves of X-ray twin diffraction in sapphire crystals YS/T 26 Inspection Method for Edge Contour of Silicon Wafers

3 Terms and Definitions

The terms and definitions defined in GB/T 14264 and GB/T 31092, as well as the following terms and definitions, apply to this document. 3.1 Contaminant Substances that are not intentionally attached to the surface of a sapphire substrate. ...