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GB/T 1554: Historical versions
| Std ID | Version | USD | Buy | Deliver [PDF] in | Title (Description) |
| GB/T 1554-2009 | English | 489 |
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Testing method for crystallographic perfection of silicon by preferential etch techniques
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| GB/T 1554-1995 | English | 479 |
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Test method for crystallographic perfection of silicon by preferential etch techniques
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| GB/T 1554-1979 | English | RFQ |
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Measurement of dislocation etch pits on (111) crystal face in monocrystalline silicon by etch display methods
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Basic data
| Standard ID | GB/T 1554-2009 (GB/T1554-2009) |
| Description (Translated English) | Testing method for crystallographic perfection of silicon by preferential etch techniques |
| Sector / Industry | National Standard (Recommended) |
| Classification of Chinese Standard | H80 |
| Classification of International Standard | 29.045 |
| Word Count Estimation | 21,218 |
| Date of Issue | 2009-10-30 |
| Date of Implementation | 2010-06-01 |
| Older Standard (superseded by this standard) | GB/T 1554-1995 |
| Quoted Standard | GB/T 14264; YS/T 209 |
| Regulation (derived from) | National Standard Approval Announcement 2009 No.12 (Total No.152) |
| Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China |
| Summary | This standard specifies the technical inspection method preferential etching silicon crystal integrity. |
GB/T 1554-2009: Testing method for crystallographic perfection of silicon by preferential etch techniques
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Testing method for crystallographic perfection of silicon by preferential etch techniques
ICS 29.045
H80
National Standards of People's Republic of China
Replacing GB/T 1554-1995
Crystallographic perfection of silicon by preferential etch test methods
Posted 2009-10-30
2010-06-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard replaces GB/T 1554-1995 "crystallographic perfection of silicon by preferential etch test methods."
This standard compared with GB/T 1554-1995, the main changes are as follows.
--- Added "The method is also applicable to a silicon single crystal film";
--- Added "Terms and Definitions", "disturbing factors" chapter;
--- Chapter 4 the last sentence "with the naked eye and optical microscope observation" to "visually combined with metallurgical microscope
Observed";
--- Original standard "in Table 1 four commonly used chemical polishing liquid formula," delete, chemical polishing liquid ratio was modified, deleted acid
Recipes; and the content of the various reagents and materials to level modifications; adds weight ratios were 50% CrO3 and 10% CrO3
The ratio of the standard solution; an increase of crystal defects show common etchant comparative table; increase based SEMIMF1809-0704
Several international common non-chromium, chromium etching solution formulation, application and suitability classification comparative table;
--- Chapter 9 of the original GB/T 1554-1995 "on (111) surface defects show" in the resistivity of not less than 0.2Ω · cm sample decay of
Eclipse time changed 10min ~ 15min; "(100) surface defects show" in the sample and the resistivity of not less than 0.2Ω · cm of electrical
Corrosion resistance of the sample time of less than 0.2Ω · cm's all changed 10min ~ 15min; increasing the (110) plane of indications; increase
Added to the heavily doped samples show defects; increase the "m" shaped measuring method in selecting the measuring point defects observed in.
Appendix A of this standard is an informative annex.
This standard by the National Standardization Technical Committee of semiconductor equipment and materials proposed.
This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material.
This standard was drafted. Emei Semiconductor Material Factory.
The main drafters of this standard. He Lanying, Wang Yan, Zhang Huijian, Liu Yang.
This standard replaces the standards previously issued as follows.
--- GB 1554-1979, GB/T 1554-1995.
--- GB 4057-1983.
Crystallographic perfection of silicon by preferential etch test methods
1 Scope
This standard specifies the test method preferential etching silicon crystal integrity.
This standard applies to the crystal orientation of < 111>, < 100> or < 110>, resistivity of 10-3 Ω · cm ~ 104 Ω · cm, dislocation density in
Monocrystalline silicon ingot or wafer inspection natively defects 105cm-2 between 0cm-2 ~.
The method is also applied to Si wafers.
2 Normative references
The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent
Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research
Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard.
GB/T 14264 semiconductor material terms
YS/T 209 native silicon material defect map
3 Terms and Definitions
Terms and definitions GB/T 14264 in the provisions applicable to this standard.
4 principle of the method
The display method using chemical preferential etching crystalline defects. Samples were preferred etch solution, in the defective position is etched shallow pit
Or mound, at the macro may compose a certain pattern in the micro presented as discrete corrosion pits or mound. Combined with the use of visual inspection microscope
They were observed.
5 disturbances
5.1 etchant place for too long, there are volatile, precipitate phenomenon, affecting the corrosion effect.
5.2 Corrosion Corrosion time is too short, the dislocation was not obvious; etching time is too long, pitting corrosion and easy to expand, on the surface roughness, it is not clear background
Clarity, features not obvious, dislocations are difficult to observe.
5.3 Corrosion corrosion, high temperature, the reaction speed is fast, and the reaction was easily attached to the surface of the sample affect the observed defects.
5.4 corrosion, the sample placed on the way the results of observations also has some influence, if corrosion resistance to hydrofluoric acid in the sample container upright,
Etching bath may be generated in the surface of the sample, observe the effect of the defect.
6 Reagents and materials
6.1 trioxide, chemically pure.
6.2 hydrofluoric acid, chemically pure.
6.3 nitric acid, chemically pure.
6.4 acetic acid, chemically pure.
6.5 pure water resistivity greater than 10MΩ · cm (25 ℃).
Chemical etching polishing liquid ratio of 6.6. HF.HNO3 = 1. (3 ~ 5) (volume ratio).
6.7 chromic acid solution A. Weigh 500g of chromium trioxide in a beaker with water completely dissolved, transferred to 1000mL volumetric flask, diluted with water
To the mark, and mix.
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