GB/T 13150-2005 PDF English
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US$339.00 · In stock · Download in 9 secondsGB/T 13150-2005: Semiconductor devices -- Discrete devices -- Blank detail specification for bi-directional triode thyristors (triacs), ambient and case-rated, for currents greater than 100A
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GB/T 13150: Historical versions
| Std ID | Version | USD | Buy | Deliver [PDF] in | Title (Description) |
| GB/T 13150-2005 | English | 339 | Add to Cart | 3 days [Need to translate] | Semiconductor devices -- Discrete devices -- Blank detail specification for bi-directional triode thyristors (triacs), ambient and case-rated, for currents greater than 100A |
| GB/T 13150-1991 | English | 399 | Add to Cart | 3 days [Need to translate] | Blank detail specification for bidirectional triode thyristors, ambient or case-rated, above 100A |
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Basic data
| Standard ID | GB/T 13150-2005 (GB/T13150-2005) |
| Description (Translated English) | Semiconductor devices -- Discrete devices -- Blank detail specification for bi-directional triode thyristors (triacs), ambient and case-rated, for currents greater than 100A |
| Sector / Industry | National Standard (Recommended) |
| Classification of Chinese Standard | K46 |
| Classification of International Standard | 31.080.20 |
| Word Count Estimation | 13,122 |
| Date of Issue | 2005-03-23 |
| Date of Implementation | 2005-10-01 |
| Older Standard (superseded by this standard) | GB/T 13150-1991 |
| Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People Republic of China, China National Standardization Administration Committee |