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US$239.00 ยท In stock Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. YS/T 819-2012: High-purity sputtering copper target used in electronic film Status: Valid
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| YS/T 819-2012 | English | 239 |
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High-purity sputtering copper target used in electronic film
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YS/T 819-2012
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Basic data | Standard ID | YS/T 819-2012 (YS/T819-2012) | | Description (Translated English) | High-purity sputtering copper target used in electronic film | | Sector / Industry | Nonferrous Metallurgy Industry Standard (Recommended) | | Classification of Chinese Standard | H62 | | Classification of International Standard | 77.150.30 | | Word Count Estimation | 9,967 | | Quoted Standard | GB/T 14265; GJB 1580A; YS/T 347; YS/T 837 | | Regulation (derived from) | Ministry of Industry and Information Technology Bulletin No. 55 of 2012; industry standard filing Notice 2013 No. 1 (Total No. 157); | | Issuing agency(ies) | Ministry of Industry and Information Technology | | Summary | This standard specifies the electronic membrane with a high copper sputtering target requirements, test methods, inspection rules and signs, packaging, transportation, storage, quality certificates and contracts (or orders) content. This standard applies |
YS/T 819-2012: High-purity sputtering copper target used in electronic film---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
High-purity sputtering copper target used in electronic film
ICS 77.150.30
H62
People's Republic of China Nonferrous Metals Industry Standard
Electronic film with high copper sputtering target
Issued on. 2012-11-07
2013-03-01 implementation
Ministry of Industry and Information Technology of the People's Republic of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
This standard by the national non-ferrous metals Standardization Technical Committee (SAC/TC243) centralized.
This standard was drafted. Ningbo Jiang Feng Electronic Materials Co., have research billion of the new Materials Co., Ltd..
The main drafters of this standard. Wang Xueze, Sonja, Gao Yan, Yan yet again, Zhaoyong Shan, Yuan Jie, Xiong.
Electronic film with high copper sputtering target
1 Scope
This standard specifies the electronic film with a high copper sputtering targets requirements, test methods, inspection rules and signs, packaging, transportation, storage, quality
Certificates and the amount of the contract (or purchase order) content.
This standard applies to all types of high copper sputtering targets used in the manufacture of electronic film (hereinafter referred to as high-pure copper target).
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 14265 metallic materials hydrogen, oxygen, nitrogen, carbon and sulfur analysis General
GJB1580A deformation of the metal ultrasonic inspection method
YS/T 347 copper and copper alloys average grain size measurement method
YS/T 837 sputtering targets - combined with quality back Ultrasonic testing
3 Requirements
3.1 Categories
High pure copper target classification according to the application into the background. a semiconductor wiring high copper target, a semiconductor package with high copper target, flat panel display
High pure copper target and a solar cell with high pure copper target.
3.2 Content Requirements
The high copper sputtering targets uses, composition and impurity elements electronic film with a high copper sputtering targets should be consistent with the requirements specified in Table 1.
Table 1 Chemical Composition of high copper target
Grade 4N 4N5 5N 6N
Cu content /%
not less than
99.99 99.995 99.999 99.9999
Impurities/10-6,
no greater than
Ag - 25 5 0.3
Al - - 0.5 0.1
As 20 5 0.5 0.02
Bi 20 1 1 0.02
Ca - - 0.5 0.02
Cd - 1 0.1 -
CL - - - -
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