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YS/T 719-2009: Flat magneting sputtering target. Silicon target for optical coating
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| YS/T 719-2009 | English | 209 |
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Flat magneting sputtering target. Silicon target for optical coating
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YS/T 719-2009
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Basic data | Standard ID | YS/T 719-2009 (YS/T719-2009) | | Description (Translated English) | Flat magneting sputtering target. Silicon target for optical coating | | Sector / Industry | Nonferrous Metallurgy Industry Standard (Recommended) | | Classification of Chinese Standard | H63 | | Classification of International Standard | 77.150.99 | | Word Count Estimation | 6,628 | | Date of Issue | 2009-12-04 | | Date of Implementation | 2010-06-01 | | Quoted Standard | GB/T 1551; GB/T 2040; GB/T 5121; GB/T 5231; GB/T 12963 | | Regulation (derived from) | MIIT [2009] No. 66 | | Issuing agency(ies) | Ministry of Industry and Information Technology | | Summary | This standard specifies the planar magnetron sputtering target of optical thin film silicon requirements, test methods, inspection rules, marking, packaging, transportation, storage and purchase order (or contract) content. This standard applies to planar magnetron sputtering optical thin film silicon target. | YS/T 719-2009: Flat magneting sputtering target. Silicon target for optical coating---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Flat magneting sputtering target.Silicon target for optical coating
ICS 77.150.99
H63
People's Republic of China Nonferrous Metals Industry Standard
Planar magnetron sputtering target
Optical thin film silicon target
Posted 2009-12-04
2010-06-01 implementation
Ministry of Industry and Information Technology of the People's Republic of China released
Foreword
This standard by the National Standardization Technical Committee of non-ferrous metals and centralized.
This standard is drafted by. Lida Optical Company.
The main drafters of this standard. WORKING Yangtai Li, Fu Yong, Duan Yuling, Zhang Xiangdong, Zhao Lun.
Planar magnetron sputtering target
Optical thin film silicon target
1 Scope
This standard specifies the optical thin film planar magnetron sputtering using a silicon target requirements, test methods, inspection rules, marking, packaging, transportation and storage
And purchase order (or contract) content.
This standard applies to planar magnetron sputter optical film silicon target.
2 Normative references
The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent
Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research
Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard.
GB/T 1551 silicon and germanium two probe method for measuring resistivity DC
GB/T 2040 copper and copper alloy sheet
GB/T 5121 (all parts) of copper and copper alloys -
GB/T 5231 Wrought copper and copper alloy chemical composition and shape of the product
GB/T 12963 polycrystalline silicon
3 Terms and Definitions
The following terms and definitions apply to this standard.
The percentage of the actual area to be joined junction area between the silicon plate and the backplate account.
4 Requirements
4.1 Material
Copper (back) and a silicon plate.
4.2 Chemical composition
Chemical composition of the silicon plate by supply and demand sides agreed; copper grades and chemical composition in line with GB/T 5231 regulations.
4.3 size of the target and tolerance
Target size and tolerance negotiated by both parties shall comply with the technical drawings signed by both parties.
4.4 surface conditions
Target surface roughness and flatness negotiated by both parties.
4.5 appearance quality
Copper and silicon plate appearance quality should conform to GB T 12963 and GB/T 2040 requirements /.
4.6 Resistivity
Resistivity silicon plate should be (0.005 ~ 0.05) μΩ · cm.
4.7 Lap rate
A silicon plate and a copper plate not less than 95% overlap, in which a single bad contact area of the region should be not more than 2.5% of the area of overlap.
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