YS/T 1061-2015 (YST1061-2015)

Standard ID	Contents [version]	USD	STEP2	[PDF] delivered in	Standard Title (Description)	Related Standard	Status	PDF
YS/T 1061-2015	English	139	Add to Cart	3 days [Need to translate]	Silicon core for polysilicon by improved siemens method	YS/T 1061-2015	Valid	YS/T 1061-2015

YS/T 1061-2015
(Modified Siemens polysilicon silicon core)
ICS 29.045
H82
People's Republic of China Nonferrous Metals Industry Standard
Modified Siemens polycrystalline silicon core
Issued on. 2015-04-30
2015-10-01 implementation
Ministry of Industry and Information Technology of the People's Republic of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
This standard by the national non-ferrous metals Standardization Technical Committee (SAC/TC243) and focal points.
This standard was drafted. Jiangsu Zhongneng Polysilicon Technology Development Co., Ltd., Henan GCL Solar Technology Co., Ltd., Wuxi New Silicon Materials
Co., Ltd., Kunming Metallurgical Institute New Materials Co., Ltd.
The main drafters of this standard. n-Jun, Hu Wei, Zhang Xiaodong, Gengquan Rong, Liu Dan, Chen Jing, Kang Ruogu, Zhao was.
Modified Siemens polycrystalline silicon core
1 Scope
This standard specifies the production of polysilicon with improved Siemens silicon core requirements, test methods, inspection rules and signs, packaging, transportation,
Storage, quality certificate and purchase order (or contract) content.
This standard applies to polycrystalline silicon as raw material by Czochralski (CZ) silicon rod production line and then after cutting or using the base system Farah
Silicon core.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 1550 extrinsic conductivity type semiconductor material testing methods
GB/T 1551 silicon single crystal resistivity measuring method
GB/T 1558 silicon substitutional atomic carbon content by infrared absorption method
GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan
GB/T 11336 straightness error detection
GB/T 14264 semiconductor material terms
GB/T 24582 acid leach - Inductively Coupled Plasma Mass Spectrometry polysilicon surface of the metal impurity
Inductively coupled plasma mass measurement method GB/T 29849 photovoltaic cells from silicon surface of the metal impurity content
3 Terms and Definitions
Terms and definitions GB/T 11336 and GB/T 14264 apply to this document defined.
4 Requirements
4.1 Classification
4.1.1 Silicon Press-sectional shape into a round shape, square shape, diamond shape.
4.1.2 Silicon divided according to the degree of purity solar grade polycrystalline silicon core and electronic grade polysilicon silicon core.
4.2 size and shape
Silicon core size and shape shall be in accordance with Table 1.
Table 1 Size and Shape
Project Requirements
Diameter (circular)/mm φ (6 ~ 12) ± 1
Side length (square, diamond shape)/mm (8 × 8) ± 0.5 ~ (15 × 15) ± 0.5
Length/mm 2000 ± 2 ~ 3200 ± 2