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www.ChineseStandard.net Database: 189759 (19 Oct 2025)

SJ/T 11976-2025 English PDF

Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
SJ/T 11976-2025EnglishRFQ ASK 3 days [Need to translate] Neutron transmutation doped float zone silicon single crystal for Insulate GateBipolar Transistors (IGBT) Valid SJ/T 11976-2025

Basic data

Standard ID SJ/T 11976-2025 (SJ/T11976-2025)
Description (Translated English) Neutron transmutation doped float zone silicon single crystal for Insulate GateBipolar Transistors (IGBT)
Sector / Industry Electronics Industry Standard (Recommended)
Date of Issue 2025-05-09
Date of Implementation 2025-08-01
Issuing agency(ies) Ministry of Industry and Information Technology