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www.ChineseStandard.net Database: 189760 (18 Oct 2025)

SJ/T 11829.2-2022 English PDF

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SJ/T 11829.2-2022: (Plasma Enhanced Chemical Vapor Deposition (PECVD) Equipment for Crystalline Silicon Photovoltaic Cells - Part 2: Plate PECVD Equipment)
Status: Valid
Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
SJ/T 11829.2-2022English339 Add to Cart 4 days [Need to translate] (Plasma Enhanced Chemical Vapor Deposition (PECVD) Equipment for Crystalline Silicon Photovoltaic Cells - Part 2: Plate PECVD Equipment) Valid SJ/T 11829.2-2022

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Basic data

Standard ID SJ/T 11829.2-2022 (SJ/T11829.2-2022)
Description (Translated English) (Plasma Enhanced Chemical Vapor Deposition (PECVD) Equipment for Crystalline Silicon Photovoltaic Cells - Part 2: Plate PECVD Equipment)
Sector / Industry Electronics Industry Standard (Recommended)
Word Count Estimation 17,114
Date of Issue 2022-09-30
Date of Implementation 2023-01-01
Issuing agency(ies) Ministry of Industry and Information Technology
Summary This standard specifies the terms and definitions, model designation, working environment, requirements, inspection methods, inspection rules, and packaging, marking, handling, transportation, and storage of plate-type plasma-enhanced chemical vapor deposition (PECVD) equipment for crystalline silicon photovoltaic cells. . Suitable for plate type PECVD equipment for crystalline silicon photovoltaic cells. This document is applicable to the deposition of various thin film materials such as amorphous silicon (a-Si:H), microcrystalline silicon (��c-Si:H), silicon dioxide (SiO2), aluminum oxide (Al2O3), silicon nitride Intrinsic thin films such as (SiNx) thin films and various doped thin film materials, etc. PECVD equipment for thin-film photovoltaic cells and flexible photovoltaic cells can also be used as a reference.

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