US$519.00 · In stock Delivery: <= 5 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 4377-2018: Semiconductor integrated circuits -- Measuring method of voltage regulators Status: Valid GB/T 4377: Evolution and historical versions
Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
GB/T 4377-2018 | English | 519 |
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Semiconductor integrated circuits -- Measuring method of voltage regulators
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GB/T 4377-2018
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GB/T 4377-1996 | English | 679 |
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Semiconductor integrated circuits. General principles of measuring methods of voltage regulator
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GB/T 4377-1996
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GB 4377-1984 | English | 479 |
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General principles of measuring methods of voltage regulator for semiconductor integrated circuits
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GB 4377-1984
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PDF similar to GB/T 4377-2018
Basic data Standard ID | GB/T 4377-2018 (GB/T4377-2018) | Description (Translated English) | Semiconductor integrated circuits -- Measuring method of voltage regulators | Sector / Industry | National Standard (Recommended) | Classification of Chinese Standard | L56 | Classification of International Standard | 31.200 | Word Count Estimation | 26,295 | Date of Issue | 2018-03-15 | Date of Implementation | 2018-08-01 | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration |
GB/T 4377-2018: Semiconductor integrated circuits -- Measuring method of voltage regulators---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Semiconductor integrated circuits--Measuring method of voltage regulators
ICS 31.200
L56
National Standards of People's Republic of China
Replacing GB/T 4377-1996
Semiconductor integrated circuit
Voltage regulator test method
Published by.2018-03-15
2018-08-01 Implementation
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
China National Standardization Administration released
Directory
Preface I
1 Scope 1
2 Terms and Definitions 1
3 General 3
3.1 Test Environment Requirements 3
3.2 Test Considerations 3
3.3 Test Instruments and Equipment 3
4 Parameter Test 3
4.1 Voltage Regulation (SV) 3
4.2 Current Regulation (SI) 5
4.3 Power Supply Ripple Spur Ratio 6
4.4 Output Voltage Temperature Coefficient (ST) 7
4.5 Long-Term Stability of Output Voltage (St) 8
4.6 Output Noise Voltage (VNO) 9
4.7 Dissipation Current (ID) and Dissipation Current Variation (ΔID) 10
4.8 Short Circuit Current (IOS) 11
4.9 Output Impedance (ZO) 12
4.10 Reference Voltage (VREF) 13
4.11 Startup Time (tS) 14
4.12 Minimum input and output voltage difference (VDROP) 15
4.13 Input Voltage Change Transient Response Time (t1) and Input Voltage Change Transient Overshoot Voltage [VOM(VI)] 16
4.14 Load current change transient response time (t2) and load current change transient overshoot voltage [VOM(IO)] 17
4.15 Output Current Limit (ILimit) 18
4.16 Thermal Shutdown Temperature (TSHDN) and Hysteresis Temperature (ΔTSHDN) 19
4.17 Output Voltage (VO) and Output Voltage Deviation (ΔVO) 20
4.18 Thermal Regulation (Sh) 21
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard replaces GB/T 4377-1996 "Basic Principles for Test Methods for Voltage Regulators of Semiconductor Integrated Circuits" and GB/T 4377-
Compared with.1996, the main technical changes are as follows.
--- Modify the power supply ripple rejection ratio Srip, output noise voltage VNO, dissipation current ID and dissipation current change ΔID, thermal regulation
Sh4 parameter test method;
--- Deleted the phrase "does not apply to double-ended (input) port devices" in the original standard;
--- Deleted the "starting voltage range VOR" in the original standard, and replaced it with "starting time tS";
--- Increased start-up time tS, output current limit ILimit, thermal shutdown temperature TSHDN and hysteresis temperature ΔTSHDN, and output voltage VO
And output voltage deviation ΔVO4 item parameter test method.
Please note that some of the contents of this document may involve patents. The issuing agency of this document does not assume responsibility for identifying these patents.
This standard was proposed by the Ministry of Industry and Information Technology of the People's Republic of China.
This standard is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78).
This standard was drafted by. Shengbang Microelectronics (Beijing) Co., Ltd. and the ninth institute of the China Aerospace Science and Technology Corporation No. 718 Research Institute.
Institute, Chengdu Zhenxin Technology Co., Ltd., Beijing Yuxiang Electronics Co., Ltd.
The main drafters of this standard. Wang Hongru, Yuan Yingying, Zou Chen, Zhu Hua, Zhang Baohua, Zhang Bing, Chen Zhipei, Luo Bin.
Semiconductor integrated circuit
Voltage regulator test method
1 Scope
This standard specifies the voltage regulator (hereinafter referred to as the device) parameter test method.
This standard applies to the testing of voltage regulator parameters in the field of semiconductor integrated circuits.
2 Terms and Definitions
The following terms and definitions apply to this document.
2.1
Voltage regulation
The rate of change of the output voltage with changes in the input voltage, usually by changing the DC input voltage and measuring the corresponding output voltage change
To determine the voltage regulation rate.
2.2
Current regulation current regulation
The rate of change of output voltage with changes in output current, usually by changing the DC output current and measuring the corresponding DC output
The pressure changes to determine the current regulation rate.
2.3
Power supply ripple rejection ratio powersupplyrejectionratio
The ratio of the input power variation to the output voltage variation.
2.4
Output voltage temperature coefficient outputvoltagetemperaturecoefficient
The rate of change of the output voltage with changes in ambient temperature, usually by changing the ambient temperature and recording the corresponding output voltage change
Determine the temperature coefficient of the output voltage.
2.5
Output voltage long-term stability outputvoltagestability
The rate of change of the output voltage over time is determined by testing the change in output voltage value over time.
2.6
Output noise voltage outputvoltagenoise
The noise generated by the device itself at the output voltage, usually measured at the device's internal circuit versus output voltage, at a specified DC input voltage
Interference.
2.7
Dissipative Current and Dissipation Current Changes dissipativecurrentanddissipationcurrentchanges
The ground current value when the input voltage and output current are the specified values determine the change of the dissipated current when the input and output conditions change.
The measured dissipated current when the output current is “0” is also referred to as a quiescent current (Iq).
2.8
Short-circuit current
The output current at the output of the device is short-circuited, and the short-circuit current is usually measured at the specified input voltage.
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