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GB/T 42837-2023: Microwave semiconductor integrated circuits - Amplifier
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 42837-2023 | English | 269 |
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Microwave semiconductor integrated circuits - Amplifier
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GB/T 42837-2023
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Basic data | Standard ID | GB/T 42837-2023 (GB/T42837-2023) | | Description (Translated English) | Microwave semiconductor integrated circuits - Amplifier | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L56 | | Classification of International Standard | 31.200 | | Word Count Estimation | 14,116 | | Date of Issue | 2023-08-06 | | Date of Implementation | 2023-12-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 42837-2023: Microwave semiconductor integrated circuits - Amplifier---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.200
CCSL56
National Standards of People's Republic of China
Microwave semiconductor integrated circuit
amplifier
Amplifier
Published on 2023-08-06
Implemented on 2023-12-01
State Administration for Market Regulation
Released by the National Standardization Administration Committee
Foreword
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents"
Drafting.
Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents.
This document is proposed by the Ministry of Industry and Information Technology of the People's Republic of China.
This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78).
This document was drafted by. China Electronics Technology Standardization Institute, China Electronics Technology Group Corporation Thirteenth Research Institute, Shenzhen Weibuxin
Information Co., Ltd., Hangzhou University of Dianzi Science and Technology, China Electronics Technology Group Corporation 55th Research Institute, Guangdong Province Zhongshaoxuan Standardization Technology
Technology Research Institute Co., Ltd., Chengdu Yaguang Electronics Co., Ltd., Huizhou Ruiding Electronic Technology Co., Ltd., Qingdao Jinhuiyuan Electronics Co., Ltd.
Company, the 38th Research Institute of China Electronics Technology Group Corporation, and the 35th Research Institute of China Aerospace Science and Industry Corporation.
The main drafters of this document. Zhou Jun, Huo Yuzhu, Huang Jianxin, Xing Hao, Wu Weili, Yin Liyi, Yang Xiaoyu, Zhu Zhenzhong, Li Depeng, Liu Fang,
Wang Bangjin, Zhao Yan.
Microwave semiconductor integrated circuit
amplifier
1 Scope
This document stipulates the classification, technical requirements, test methods and inspection rules of amplifiers.
This document applies to the design, manufacturing, procurement and acceptance of amplifiers designed and manufactured using semiconductor integrated circuit processes.
2 Normative reference documents
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations
For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to
this document.
GB/T 4589.1 Semiconductor devices Part 10.General specifications for discrete devices and integrated circuits
GB/T 4937.3 Mechanical and climatic test methods for semiconductor devices Part 3.External visual inspection
GB/T 4937.4 Mechanical and climatic test methods for semiconductor devices Part 4.Highly accelerated steady-state hot and humid test (HAST)
GB/T 4937.11 Mechanical and climatic test methods for semiconductor devices Part 11.Rapid temperature change double liquid tank method
GB/T 4937.13 Mechanical and climatic test methods for semiconductor devices Part 13.Salt spray
GB/T 4937.14 Mechanical and climatic test methods for semiconductor devices Part 14.Terminal strength (lead robustness)
GB/T 4937.15 Mechanical and climatic test methods for semiconductor devices Part 15.Soldering heat resistance of through-hole mounted devices
GB/T 4937.21 Mechanical and climatic test methods for semiconductor devices Part 21.Solderability
GB/T 4937.23 Mechanical and climatic test methods for semiconductor devices Part 23.High temperature operating life
GB/T 4937.26 Mechanical and climatic test methods for semiconductor devices Part 26.Electrostatic discharge (ESD) sensitivity test
Human Body Model (HBM)
GB/T 4937.27 Mechanical and climatic test methods for semiconductor devices Part 27.Electrostatic discharge (ESD) sensitivity test
Machine Model(MM)
GB/T 9178 Integrated circuit terminology
GB/T 12750 Semiconductor device integrated circuits Part 11.Specifications for semiconductor integrated circuits (excluding hybrid circuits)
GB/T 19403.1 Semiconductor device integrated circuits Part 11.Part 1.Internal visual inspection of semiconductor integrated circuits (excluding
including hybrid circuits)
GB/T 20870.1-2007 Semiconductor devices Part 16-1.Microwave integrated circuit amplifiers
SJ/T 10147 Integrated circuit anti-static packaging tube
SJ/T 11587-2016 Technical requirements for anti-static packaging of electronic products
IEC 60749-9 Mechanical and climatic test methods for semiconductor devices Part 9.Marking durability (Semiconductor
IEC 60749-24 Mechanical and climatic test methods for semiconductor devices Part 24.Accelerated moisture resistance without bias and strong accelerated stress test
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