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GB/T 37213-2018: Test method for silicon brick dimension -- Laser technology method
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| GB/T 37213-2018 | English | 139 |
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Test method for silicon brick dimension -- Laser technology method
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GB/T 37213-2018
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Basic data | Standard ID | GB/T 37213-2018 (GB/T37213-2018) | | Description (Translated English) | Test method for silicon brick dimension -- Laser technology method | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H21 | | Classification of International Standard | 77.040 | | Word Count Estimation | 7,731 | | Date of Issue | 2018-12-28 | | Date of Implementation | 2019-11-01 | | Regulation (derived from) | National Standard Announcement No. 17 of 2018 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 37213-2018: Test method for silicon brick dimension -- Laser technology method---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for silicon brick dimension--Laser technology method
ICS 77.040
H21
National Standards of People's Republic of China
Silicon ingot size measurement laser method
Published on.2018-12-28
2019-11-01 implementation
State market supervision and administration
China National Standardization Administration issued
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard is supported by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and National Semiconductor Equipment and Materials Standards.
The Technical Subcommittee Materials Branch (SAC/TC203/SC2) jointly proposed and managed.
This standard was drafted. Suzhou GCL Solar Technology Co., Ltd., Jiangsu Xiexin Silicon Materials Technology Development Co., Ltd., Shandong Daxin Energy
Source Development Co., Ltd.
The main drafters of this standard. Gong Longfei, Jin Shanming, Lin Qingxiang, Xiage Genping, Tang Shanshan, Liu Kun.
Silicon ingot size measurement laser method
1 Scope
This standard specifies methods for non-contact measurement of square silicon ingot size by laser method, including diagonal, chamfer, perpendicularity, side length and
length.
This standard applies to the measurement of the size of a square silicon ingot cut by a silicon single crystal rod or a polycrystalline silicon ingot in the semiconductor and photovoltaic fields.
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only the dated version applies to this article.
Pieces. For undated references, the latest edition (including all amendments) applies to this document.
GB/T 14264 semiconductor material terminology
GB/T 25076 silicon single crystal for solar cells
GB/T 29054 solar grade cast polycrystalline silicon block
3 Terms and definitions
The terms and definitions defined in GB/T 14264, GB/T 25076 and GB/T 29054 apply to this document.
4 Principle of the method
A size measurement system is constructed using laser technology, and a laser source is used as the incident light to illuminate the silicon ingot. Receiving a laser through a laser probe
The light reflects the signal, forms a laser pulse waveform, and feeds the data back to the computer software processing control system. Control by computer software
The system simulates and calculates the diagonal, chamfer, perpendicularity, side length and length parameters of the silicon ingot to obtain the dimensional parameters of the silicon ingot.
The diagonal, chamfer, and perpendicularity parameters of the silicon ingot are measured by the laser measuring components A, B, C, and D, as shown in FIG. Silicon ingot side length, length
The parameters are measured by the laser measuring components P, L, Q, R, as shown in Figure 2. When measuring the length of a silicon ingot, the silicon ingot is perpendicular to the laser measuring component.
Surface movement, when the first end face of the silicon ingot passes through the laser to measure the plane of the component, the initial position of the four sides is recorded, when the second end of the silicon ingot passes
When the laser is used to measure the plane of the component, the end positions of the four sides are recorded to determine the length of the silicon ingot.
Description.
A, B, C, D---laser measurement components.
Figure 1 Schematic diagram of diagonal, chamfer and perpendicularity measurement of silicon ingot
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