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GB/T 24366-2024: Technical requirements of optoelectronic detector module for communication
Status: Valid GB/T 24366: Evolution and historical versions
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| GB/T 24366-2024 | English | 359 |
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Technical requirements of optoelectronic detector module for communication
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GB/T 24366-2024
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| GB/T 24366-2009 | English | 359 |
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Technical requirements of optoelectronic detector module for communication
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GB/T 24366-2009
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PDF similar to GB/T 24366-2024
Basic data | Standard ID | GB/T 24366-2024 (GB/T24366-2024) | | Description (Translated English) | Technical requirements of optoelectronic detector module for communication | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | M33 | | Classification of International Standard | 33.180.10 | | Word Count Estimation | 18,148 | | Date of Issue | 2024-09-29 | | Date of Implementation | 2025-01-01 | | Older Standard (superseded by this standard) | GB/T 24366-2009 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 24366-2024: Technical requirements of optoelectronic detector module for communication---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 33.180.10
CCSM33
National Standard of the People's Republic of China
Replaces GB/T 24366-2009
Technical requirements for photoelectric detector components for communications
Released on 2024-09-29
2025-01-01 Implementation
State Administration for Market Regulation
The National Standardization Administration issued
Table of Contents
Preface III
1 Scope 1
2 Normative references 1
3 Terms and Definitions 1
4 Abbreviations 3
5 Categories 3
5.1 Application Type 3
5.2 Chip Type 3
5.3 Wavelength 3
5.4 Optical input type 4
6 Technical Requirements 4
6.1 Extreme working conditions 4
6.2 Photoelectric properties 5
6.3 Environmental Compliance 9
Reference 11
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents"
Drafting.
This document replaces GB/T 24366-2009 "Technical requirements for photoelectric detector components for communications" and is consistent with GB/T 24366-2009.
In addition to structural adjustments and editorial changes, the main technical changes are as follows.
a) Added parameter definitions for some detector components. sensitivity (see 3.7), minimum detectable optical power (see 3.8), overload optical power
(see 3.9), breakdown voltage temperature coefficient (see 3.10), current response (see 3.11), spectral response range (see 3.12), dark current
(see 3.13), optical return loss (see 3.14), receiving component bandwidth (-3dB) (see 3.15) and carrier-to-noise ratio (see 3.16);
b) Changed “Classification by die type of photoelectric detector assembly” to “Classification by type of photoelectric chip used” (see 5.2,.2009
Version 4.2); added "PIN TIA SOA Photodetector Components" and "APD TIA SOA Photodetector Components"
There are two types of "pieces" (see 5.2);
c) The extreme working conditions have been changed (see Table 1, Table 1, Table 3 and Table 5 of the.2009 edition);
d) Changed some parameters of the photoelectric characteristics of the PIN TIA detector assembly. optical return loss, sensitivity, pressure sensitivity,
Overload optical power and receiving component bandwidth (-3dB) (see Table 2, Table 2 of the.2009 edition); dynamic range and TIA operation are deleted
Voltage parameter indicators (Table 2 of the.2009 edition);
e) Modified some parameters of the photoelectric characteristics of the APD TIA detector assembly. spectral response range, photomultiplier factor, light
Return loss, sensitivity, pressure sensitivity, overload optical power and receiving component bandwidth (-3dB) (see Table 3,.2009 edition)
4); The parameter index of TIA working voltage has been deleted (see Table 4 of the.2009 edition);
f) Changed some parameters of the photoelectric characteristics of the PIN detector assembly. current responsivity, minimum detectable optical power, optical echo
Loss, dark current, reverse voltage, receiving component bandwidth (-3dB) and frequency response flatness (see Table 3, Table 6 of the.2009 edition); delete
In addition to the TIA operating voltage parameter indicators (Table 6 of the.2009 edition);
g) Added the photoelectric characteristics of PIN TIA SOA detector components (see Table 5);
h) Environmental compliance requirements have been changed (see 6.3, 5.4 of the.2009 edition).
Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents.
This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China.
This document is under the jurisdiction of the National Communications Standardization Technical Committee (SAC/TC485).
This document was drafted by. China Information and Communications Technology Group Co., Ltd., China Academy of Information and Communications Technology, Langmeitong Communication Technology (Shenzhen)
Ltd.
The drafters of this document. Wang Hongya, Zheng Qingli, Song Mengyang, Liu Lu, Ma Guangpeng.
The previous versions of this document and the documents it replaces are as follows.
---First published in.2009 as GB/T 24366-2009;
---This is the first revision.
Technical requirements for photoelectric detector components for communications
1 Scope
This document defines the terms, definitions, abbreviations and abbreviations of photoelectric detector assemblies for communications (hereinafter referred to as "detector assemblies"), and specifies the
The classification, optoelectronic characteristics, environmental compliance and other technical requirements of device components.
This document applies to the design, development, production and use of photodetector components in digital optical communication systems as well as analog optical communication systems.
test.
2 Normative references
The contents of the following documents constitute essential clauses of this document through normative references in this document.
For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies to
This document.
GB/T 9771 (all parts) Single-mode optical fiber for communication
GB/T 12357 (all parts) Multimode optical fiber for communication
GB/T 24365-2009 Test methods for photoelectric detector components for communications
GB/T 26572 Limit requirements for restricted substances in electronic and electrical products
GB/T 39560 (all parts) Determination of certain substances in electrical and electronic products
3 Terms and definitions
The following terms and definitions apply to this document.
3.1
Under the specified modulation rate and the specified sinusoidal jitter stress conditions, and meeting the random bit error rate requirements, the optical receiver is at point R
The minimum optical modulation amplitude OMA that can be received.
Note 1.It takes into account the worst extinction ratio, pulse rise and fall time, optical return loss on the optical transmitter side, and the allowable optical receiver under application conditions.
The power penalty caused by connector performance degradation and test tolerance.
Note 2.The definition of point R is given in Figure 1 of ITU-TG.957 (2006).
3.2
Breakdown voltage breakdown voltage; VBR
The input optical power is equal to zero, and the reverse bias voltage of the APD is gradually increased, and the dark current increases accordingly. When the dark current reaches 10μA (or 100μA),
The corresponding reverse bias voltage.
3.3
Photomultiplication factor
3.4
The maximum deviation of the response value from its best fit straight line within a certain frequency range.
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